Deep level transient spectroscopy measurement on tin-doped n-indium selenide

Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and...
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Autor*in:	Marí, B. [verfasserIn] Segura, A. Casanovas, A. Chevy, A.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1991

Systematik:	UA 9001.A

Anmerkung:	© Springer-Verlag 1991

Übergeordnetes Werk:	Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 52(1991), 6 vom: Juni, Seite 373-379
Übergeordnetes Werk:	volume:52 ; year:1991 ; number:6 ; month:06 ; pages:373-379

Links:	Volltext

DOI / URN:	10.1007/BF00323649

Katalog-ID:	OLC2074122780

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520			\|a Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients.
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allfields	10.1007/BF00323649 doi (DE-627)OLC2074122780 (DE-He213)BF00323649-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Marí, B. verfasserin aut Deep level transient spectroscopy measurement on tin-doped n-indium selenide 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1991 Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. Segura, A. aut Casanovas, A. aut Chevy, A. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 52(1991), 6 vom: Juni, Seite 373-379 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:52 year:1991 number:6 month:06 pages:373-379 https://doi.org/10.1007/BF00323649 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 52 1991 6 06 373-379
spelling	10.1007/BF00323649 doi (DE-627)OLC2074122780 (DE-He213)BF00323649-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Marí, B. verfasserin aut Deep level transient spectroscopy measurement on tin-doped n-indium selenide 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1991 Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. Segura, A. aut Casanovas, A. aut Chevy, A. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 52(1991), 6 vom: Juni, Seite 373-379 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:52 year:1991 number:6 month:06 pages:373-379 https://doi.org/10.1007/BF00323649 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 52 1991 6 06 373-379
allfields_unstemmed	10.1007/BF00323649 doi (DE-627)OLC2074122780 (DE-He213)BF00323649-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Marí, B. verfasserin aut Deep level transient spectroscopy measurement on tin-doped n-indium selenide 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1991 Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. Segura, A. aut Casanovas, A. aut Chevy, A. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 52(1991), 6 vom: Juni, Seite 373-379 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:52 year:1991 number:6 month:06 pages:373-379 https://doi.org/10.1007/BF00323649 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 52 1991 6 06 373-379
allfieldsGer	10.1007/BF00323649 doi (DE-627)OLC2074122780 (DE-He213)BF00323649-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Marí, B. verfasserin aut Deep level transient spectroscopy measurement on tin-doped n-indium selenide 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1991 Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. Segura, A. aut Casanovas, A. aut Chevy, A. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 52(1991), 6 vom: Juni, Seite 373-379 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:52 year:1991 number:6 month:06 pages:373-379 https://doi.org/10.1007/BF00323649 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 52 1991 6 06 373-379
allfieldsSound	10.1007/BF00323649 doi (DE-627)OLC2074122780 (DE-He213)BF00323649-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Marí, B. verfasserin aut Deep level transient spectroscopy measurement on tin-doped n-indium selenide 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1991 Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. Segura, A. aut Casanovas, A. aut Chevy, A. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 52(1991), 6 vom: Juni, Seite 373-379 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:52 year:1991 number:6 month:06 pages:373-379 https://doi.org/10.1007/BF00323649 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 52 1991 6 06 373-379
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author	Marí, B.
spellingShingle	Marí, B. ddc 530 rvk UA 9001.A Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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topic_title	530 620 VZ 530 VZ UA 9001.A VZ rvk Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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title	Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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title_full	Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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title_sort	deep level transient spectroscopy measurement on tin-doped n-indium selenide
title_auth	Deep level transient spectroscopy measurement on tin-doped n-indium selenide
abstract	Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. © Springer-Verlag 1991
abstractGer	Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. © Springer-Verlag 1991
abstract_unstemmed	Abstract Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients. © Springer-Verlag 1991
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title_short	Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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