Formation of embedded patterns in glasses using femtosecond irradiation
Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was f...
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| Autor*in: |
Juodkazis, S. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2004 |
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| Anmerkung: |
© Springer-Verlag 2004 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer Berlin Heidelberg, 1981, 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 |
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| Übergeordnetes Werk: |
volume:79 ; year:2004 ; number:4-6 ; day:01 ; month:09 ; pages:1549-1553 |
| Links: |
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| DOI / URN: |
10.1007/s00339-004-2845-1 |
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OLC2074166656 |
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| 520 | |a Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. | ||
| 650 | 4 | |a Etching Rate | |
| 650 | 4 | |a Silicate Glass | |
| 650 | 4 | |a Dielectric Breakdown | |
| 650 | 4 | |a Optical Breakdown | |
| 650 | 4 | |a Channel Pattern | |
| 700 | 1 | |a Yamasaki, K. |4 aut | |
| 700 | 1 | |a Mizeikis, V. |4 aut | |
| 700 | 1 | |a Matsuo, S. |4 aut | |
| 700 | 1 | |a Misawa, H. |4 aut | |
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10.1007/s00339-004-2845-1 doi (DE-627)OLC2074166656 (DE-He213)s00339-004-2845-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Juodkazis, S. verfasserin aut Formation of embedded patterns in glasses using femtosecond irradiation 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. Etching Rate Silicate Glass Dielectric Breakdown Optical Breakdown Channel Pattern Yamasaki, K. aut Mizeikis, V. aut Matsuo, S. aut Misawa, H. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 https://doi.org/10.1007/s00339-004-2845-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 79 2004 4-6 01 09 1549-1553 |
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10.1007/s00339-004-2845-1 doi (DE-627)OLC2074166656 (DE-He213)s00339-004-2845-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Juodkazis, S. verfasserin aut Formation of embedded patterns in glasses using femtosecond irradiation 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. Etching Rate Silicate Glass Dielectric Breakdown Optical Breakdown Channel Pattern Yamasaki, K. aut Mizeikis, V. aut Matsuo, S. aut Misawa, H. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 https://doi.org/10.1007/s00339-004-2845-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 79 2004 4-6 01 09 1549-1553 |
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10.1007/s00339-004-2845-1 doi (DE-627)OLC2074166656 (DE-He213)s00339-004-2845-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Juodkazis, S. verfasserin aut Formation of embedded patterns in glasses using femtosecond irradiation 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. Etching Rate Silicate Glass Dielectric Breakdown Optical Breakdown Channel Pattern Yamasaki, K. aut Mizeikis, V. aut Matsuo, S. aut Misawa, H. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 https://doi.org/10.1007/s00339-004-2845-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 79 2004 4-6 01 09 1549-1553 |
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10.1007/s00339-004-2845-1 doi (DE-627)OLC2074166656 (DE-He213)s00339-004-2845-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Juodkazis, S. verfasserin aut Formation of embedded patterns in glasses using femtosecond irradiation 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. Etching Rate Silicate Glass Dielectric Breakdown Optical Breakdown Channel Pattern Yamasaki, K. aut Mizeikis, V. aut Matsuo, S. aut Misawa, H. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 https://doi.org/10.1007/s00339-004-2845-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 79 2004 4-6 01 09 1549-1553 |
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10.1007/s00339-004-2845-1 doi (DE-627)OLC2074166656 (DE-He213)s00339-004-2845-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Juodkazis, S. verfasserin aut Formation of embedded patterns in glasses using femtosecond irradiation 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. Etching Rate Silicate Glass Dielectric Breakdown Optical Breakdown Channel Pattern Yamasaki, K. aut Mizeikis, V. aut Matsuo, S. aut Misawa, H. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 https://doi.org/10.1007/s00339-004-2845-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 79 2004 4-6 01 09 1549-1553 |
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Enthalten in Applied physics. A, Materials science & processing 79(2004), 4-6 vom: 01. Sept., Seite 1549-1553 volume:79 year:2004 number:4-6 day:01 month:09 pages:1549-1553 |
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Formation of embedded patterns in glasses using femtosecond irradiation |
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Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. © Springer-Verlag 2004 |
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Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. © Springer-Verlag 2004 |
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Abstract Channel formation in glasses is demonstrated and discussed. Photosensitive glass (Foturan) was microstructured using femtosecond irradiation at 800 nm and 400 nm wavelengths, with subsequent thermal annealing, and HF etching of a lithium-silicate phase formed by exposure-annealing. It was found that there is a significant difference in the volume of lithium-silicate when the exposure was made with and without optical breakdown. Channels with a minimum cross section of approximately 10 μm were achieved. In silicate glasses, the optically induced dielectric breakdown was used for the recording of channel patterns. The highest wet etching rate in a HF based solution was observed when the irradiance corresponded to the 2.5–3.0 thresholds of dielectric breakdown and the adjacent pulses were overlapping by more than 50% of the diameter of the focussed beam. Under these conditions, the formation of a void inside the glass was confirmed by optical observation of single shot damage under a microscope. The mechanism of selective wet etching in silicate glasses is discussed in terms of the stress corrosion effect, which explains crack propagation in glasses via the reaction of stretched Si–O–Si bonds at the tip of a crack with water, resulting in SiOH formation. It is shown that intra-connection of voxels was the key factor to achieve etching of high aspect ratio patterns in silica glass. © Springer-Verlag 2004 |
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