Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films
Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor compon...
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| Autor*in: |
Baldus, O. [verfasserIn] |
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Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2004 |
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© Springer-Verlag 2004 |
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Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 80(2004), 7 vom: 06. Juli, Seite 1553-1562 |
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| Übergeordnetes Werk: |
volume:80 ; year:2004 ; number:7 ; day:06 ; month:07 ; pages:1553-1562 |
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| DOI / URN: |
10.1007/s00339-004-2904-7 |
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OLC2074171234 |
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| 520 | |a Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. | ||
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10.1007/s00339-004-2904-7 doi (DE-627)OLC2074171234 (DE-He213)s00339-004-2904-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Baldus, O. verfasserin aut Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. Crystallization Kinetic Amorphous Film Strontium Titanate Barium Strontium Titanate Titanate Thin Film Waser, R. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 06. Juli, Seite 1553-1562 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:06 month:07 pages:1553-1562 https://doi.org/10.1007/s00339-004-2904-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 06 07 1553-1562 |
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10.1007/s00339-004-2904-7 doi (DE-627)OLC2074171234 (DE-He213)s00339-004-2904-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Baldus, O. verfasserin aut Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. Crystallization Kinetic Amorphous Film Strontium Titanate Barium Strontium Titanate Titanate Thin Film Waser, R. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 06. Juli, Seite 1553-1562 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:06 month:07 pages:1553-1562 https://doi.org/10.1007/s00339-004-2904-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 06 07 1553-1562 |
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10.1007/s00339-004-2904-7 doi (DE-627)OLC2074171234 (DE-He213)s00339-004-2904-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Baldus, O. verfasserin aut Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. Crystallization Kinetic Amorphous Film Strontium Titanate Barium Strontium Titanate Titanate Thin Film Waser, R. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 06. Juli, Seite 1553-1562 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:06 month:07 pages:1553-1562 https://doi.org/10.1007/s00339-004-2904-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 06 07 1553-1562 |
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10.1007/s00339-004-2904-7 doi (DE-627)OLC2074171234 (DE-He213)s00339-004-2904-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Baldus, O. verfasserin aut Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. Crystallization Kinetic Amorphous Film Strontium Titanate Barium Strontium Titanate Titanate Thin Film Waser, R. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 06. Juli, Seite 1553-1562 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:06 month:07 pages:1553-1562 https://doi.org/10.1007/s00339-004-2904-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 06 07 1553-1562 |
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10.1007/s00339-004-2904-7 doi (DE-627)OLC2074171234 (DE-He213)s00339-004-2904-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Baldus, O. verfasserin aut Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. Crystallization Kinetic Amorphous Film Strontium Titanate Barium Strontium Titanate Titanate Thin Film Waser, R. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 06. Juli, Seite 1553-1562 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:06 month:07 pages:1553-1562 https://doi.org/10.1007/s00339-004-2904-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 06 07 1553-1562 |
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Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. 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experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films |
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Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films |
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Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. © Springer-Verlag 2004 |
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Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. © Springer-Verlag 2004 |
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Abstract Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. © Springer-Verlag 2004 |
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