Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope

Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct depos...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Liu, Z.Q. [verfasserIn] Mitsuishi, K. Furuya, K.

Format:	Artikel
Sprache:	Englisch

Erschienen:	2004

Schlagwörter:	Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure

Systematik:	UA 9001.A

Anmerkung:	© Springer-Verlag 2004

Übergeordnetes Werk:	Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 80(2004), 7 vom: 31. Aug., Seite 1437-1441
Übergeordnetes Werk:	volume:80 ; year:2004 ; number:7 ; day:31 ; month:08 ; pages:1437-1441

Links:	Volltext

DOI / URN:	10.1007/s00339-004-2999-x

Katalog-ID:	OLC2074171439

Internformat


LEADER	01000caa a22002652 4500
001	OLC2074171439
003	DE-627
005	20230331124941.0
007	tu
008	200819s2004 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1007/s00339-004-2999-x \|2 doi
035			\|a (DE-627)OLC2074171439
035			\|a (DE-He213)s00339-004-2999-x-p
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 530 \|a 620 \|q VZ
082	0	4	\|a 530 \|q VZ
084			\|a UA 9001.A \|q VZ \|2 rvk
100	1		\|a Liu, Z.Q. \|e verfasserin \|4 aut
245	1	0	\|a Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
264		1	\|c 2004
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
500			\|a © Springer-Verlag 2004
520			\|a Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed.
650		4	\|a Electron Microscope
650		4	\|a Thin Film
650		4	\|a Transmission Electron Microscope
650		4	\|a Electron Beam
650		4	\|a Operating Procedure
700	1		\|a Mitsuishi, K. \|4 aut
700	1		\|a Furuya, K. \|4 aut
773	0	8	\|i Enthalten in \|t Applied physics. A, Materials science & processing \|d Springer-Verlag, 1981 \|g 80(2004), 7 vom: 31. Aug., Seite 1437-1441 \|w (DE-627)129861340 \|w (DE-600)283365-7 \|w (DE-576)015171930 \|x 0947-8396 \|7 nnns
773	1	8	\|g volume:80 \|g year:2004 \|g number:7 \|g day:31 \|g month:08 \|g pages:1437-1441
856	4	1	\|u https://doi.org/10.1007/s00339-004-2999-x \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_22
912			\|a GBV_ILN_24
912			\|a GBV_ILN_30
912			\|a GBV_ILN_31
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_70
912			\|a GBV_ILN_130
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4116
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4700
936	r	v	\|a UA 9001.A
951			\|a AR
952			\|d 80 \|j 2004 \|e 7 \|b 31 \|c 08 \|h 1437-1441

Indexfelder

author_variant	z l zl k m km k f kf
matchkey_str	article:09478396:2004----::hedmninlaoarctobeetobaidcdeoiinsn20eeetosncni
hierarchy_sort_str	2004
publishDate	2004
allfields	10.1007/s00339-004-2999-x doi (DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Liu, Z.Q. verfasserin aut Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure Mitsuishi, K. aut Furuya, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 31. Aug., Seite 1437-1441 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441 https://doi.org/10.1007/s00339-004-2999-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 31 08 1437-1441
spelling	10.1007/s00339-004-2999-x doi (DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Liu, Z.Q. verfasserin aut Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure Mitsuishi, K. aut Furuya, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 31. Aug., Seite 1437-1441 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441 https://doi.org/10.1007/s00339-004-2999-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 31 08 1437-1441
allfields_unstemmed	10.1007/s00339-004-2999-x doi (DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Liu, Z.Q. verfasserin aut Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure Mitsuishi, K. aut Furuya, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 31. Aug., Seite 1437-1441 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441 https://doi.org/10.1007/s00339-004-2999-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 31 08 1437-1441
allfieldsGer	10.1007/s00339-004-2999-x doi (DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Liu, Z.Q. verfasserin aut Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure Mitsuishi, K. aut Furuya, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 31. Aug., Seite 1437-1441 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441 https://doi.org/10.1007/s00339-004-2999-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 31 08 1437-1441
allfieldsSound	10.1007/s00339-004-2999-x doi (DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Liu, Z.Q. verfasserin aut Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2004 Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure Mitsuishi, K. aut Furuya, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 80(2004), 7 vom: 31. Aug., Seite 1437-1441 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441 https://doi.org/10.1007/s00339-004-2999-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 80 2004 7 31 08 1437-1441
language	English
source	Enthalten in Applied physics. A, Materials science & processing 80(2004), 7 vom: 31. Aug., Seite 1437-1441 volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441
sourceStr	Enthalten in Applied physics. A, Materials science & processing 80(2004), 7 vom: 31. Aug., Seite 1437-1441 volume:80 year:2004 number:7 day:31 month:08 pages:1437-1441
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure
dewey-raw	530
isfreeaccess_bool	false
container_title	Applied physics. A, Materials science & processing
authorswithroles_txt_mv	Liu, Z.Q. @@aut@@ Mitsuishi, K. @@aut@@ Furuya, K. @@aut@@
publishDateDaySort_date	2004-08-31T00:00:00Z
hierarchy_top_id	129861340
dewey-sort	3530
id	OLC2074171439
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074171439</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331124941.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2004 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-004-2999-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074171439</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-004-2999-x-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liu, Z.Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2004</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Microscope</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin Film</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transmission Electron Microscope</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Beam</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Operating Procedure</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mitsuishi, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Furuya, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer-Verlag, 1981</subfield><subfield code="g">80(2004), 7 vom: 31. Aug., Seite 1437-1441</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:80</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:7</subfield><subfield code="g">day:31</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1437-1441</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-004-2999-x</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">80</subfield><subfield code="j">2004</subfield><subfield code="e">7</subfield><subfield code="b">31</subfield><subfield code="c">08</subfield><subfield code="h">1437-1441</subfield></datafield></record></collection>
author	Liu, Z.Q.
spellingShingle	Liu, Z.Q. ddc 530 rvk UA 9001.A misc Electron Microscope misc Thin Film misc Transmission Electron Microscope misc Electron Beam misc Operating Procedure Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
authorStr	Liu, Z.Q.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129861340
format	Article
dewey-ones	530 - Physics 620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut aut aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0947-8396
topic_title	530 620 VZ 530 VZ UA 9001.A VZ rvk Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope Electron Microscope Thin Film Transmission Electron Microscope Electron Beam Operating Procedure
topic	ddc 530 rvk UA 9001.A misc Electron Microscope misc Thin Film misc Transmission Electron Microscope misc Electron Beam misc Operating Procedure
topic_unstemmed	ddc 530 rvk UA 9001.A misc Electron Microscope misc Thin Film misc Transmission Electron Microscope misc Electron Beam misc Operating Procedure
topic_browse	ddc 530 rvk UA 9001.A misc Electron Microscope misc Thin Film misc Transmission Electron Microscope misc Electron Beam misc Operating Procedure
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
hierarchy_parent_title	Applied physics. A, Materials science & processing
hierarchy_parent_id	129861340
dewey-tens	530 - Physics 620 - Engineering
hierarchy_top_title	Applied physics. A, Materials science & processing
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129861340 (DE-600)283365-7 (DE-576)015171930
title	Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
ctrlnum	(DE-627)OLC2074171439 (DE-He213)s00339-004-2999-x-p
title_full	Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
author_sort	Liu, Z.Q.
journal	Applied physics. A, Materials science & processing
journalStr	Applied physics. A, Materials science & processing
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science 600 - Technology
recordtype	marc
publishDateSort	2004
contenttype_str_mv	txt
container_start_page	1437
author_browse	Liu, Z.Q. Mitsuishi, K. Furuya, K.
container_volume	80
class	530 620 VZ 530 VZ UA 9001.A VZ rvk
format_se	Aufsätze
author-letter	Liu, Z.Q.
doi_str_mv	10.1007/s00339-004-2999-x
dewey-full	530 620
title_sort	three-dimensional nanofabrication by electron-beam-induced deposition using 200-kev electrons in scanning transmission electron microscope
title_auth	Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
abstract	Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. © Springer-Verlag 2004
abstractGer	Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. © Springer-Verlag 2004
abstract_unstemmed	Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. © Springer-Verlag 2004
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700
container_issue	7
title_short	Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
url	https://doi.org/10.1007/s00339-004-2999-x
remote_bool	false
author2	Mitsuishi, K. Furuya, K.
author2Str	Mitsuishi, K. Furuya, K.
ppnlink	129861340
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s00339-004-2999-x
up_date	2024-07-03T21:11:25.443Z
_version_	1803593801211576320
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074171439</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331124941.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2004 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-004-2999-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074171439</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-004-2999-x-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liu, Z.Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2004</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Microscope</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin Film</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transmission Electron Microscope</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Beam</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Operating Procedure</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mitsuishi, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Furuya, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer-Verlag, 1981</subfield><subfield code="g">80(2004), 7 vom: 31. Aug., Seite 1437-1441</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:80</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:7</subfield><subfield code="g">day:31</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1437-1441</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-004-2999-x</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">80</subfield><subfield code="j">2004</subfield><subfield code="e">7</subfield><subfield code="b">31</subfield><subfield code="c">08</subfield><subfield code="h">1437-1441</subfield></datafield></record></collection>
score	7.399212

Nicht das Richtige dabei?

Schreiben Sie uns!

Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?