Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due...
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Autor*in:	Chauveau, J.-M. [verfasserIn] Morhain, C. Lo, B. Vinter, B. Vennéguès, P. Laügt, M. Buell, D. Tesseire-Doninelli, M. Neu, G.

Format:	Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission

Systematik:	UA 9001.A

Anmerkung:	© Springer-Verlag 2007

Übergeordnetes Werk:	Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 88(2007), 1 vom: 26. Apr., Seite 65-69
Übergeordnetes Werk:	volume:88 ; year:2007 ; number:1 ; day:26 ; month:04 ; pages:65-69

Links:	Volltext

DOI / URN:	10.1007/s00339-007-3983-z

Katalog-ID:	OLC2074180853

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allfields	10.1007/s00339-007-3983-z doi (DE-627)OLC2074180853 (DE-He213)s00339-007-3983-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chauveau, J.-M. verfasserin aut Growth and characterization of A-plane ZnO and ZnCoO based heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission Morhain, C. aut Lo, B. aut Vinter, B. aut Vennéguès, P. aut Laügt, M. aut Buell, D. aut Tesseire-Doninelli, M. aut Neu, G. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 1 vom: 26. Apr., Seite 65-69 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:1 day:26 month:04 pages:65-69 https://doi.org/10.1007/s00339-007-3983-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 1 26 04 65-69
spelling	10.1007/s00339-007-3983-z doi (DE-627)OLC2074180853 (DE-He213)s00339-007-3983-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chauveau, J.-M. verfasserin aut Growth and characterization of A-plane ZnO and ZnCoO based heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission Morhain, C. aut Lo, B. aut Vinter, B. aut Vennéguès, P. aut Laügt, M. aut Buell, D. aut Tesseire-Doninelli, M. aut Neu, G. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 1 vom: 26. Apr., Seite 65-69 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:1 day:26 month:04 pages:65-69 https://doi.org/10.1007/s00339-007-3983-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 1 26 04 65-69
allfields_unstemmed	10.1007/s00339-007-3983-z doi (DE-627)OLC2074180853 (DE-He213)s00339-007-3983-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chauveau, J.-M. verfasserin aut Growth and characterization of A-plane ZnO and ZnCoO based heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission Morhain, C. aut Lo, B. aut Vinter, B. aut Vennéguès, P. aut Laügt, M. aut Buell, D. aut Tesseire-Doninelli, M. aut Neu, G. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 1 vom: 26. Apr., Seite 65-69 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:1 day:26 month:04 pages:65-69 https://doi.org/10.1007/s00339-007-3983-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 1 26 04 65-69
allfieldsGer	10.1007/s00339-007-3983-z doi (DE-627)OLC2074180853 (DE-He213)s00339-007-3983-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chauveau, J.-M. verfasserin aut Growth and characterization of A-plane ZnO and ZnCoO based heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission Morhain, C. aut Lo, B. aut Vinter, B. aut Vennéguès, P. aut Laügt, M. aut Buell, D. aut Tesseire-Doninelli, M. aut Neu, G. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 1 vom: 26. Apr., Seite 65-69 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:1 day:26 month:04 pages:65-69 https://doi.org/10.1007/s00339-007-3983-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 1 26 04 65-69
allfieldsSound	10.1007/s00339-007-3983-z doi (DE-627)OLC2074180853 (DE-He213)s00339-007-3983-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chauveau, J.-M. verfasserin aut Growth and characterization of A-plane ZnO and ZnCoO based heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission Morhain, C. aut Lo, B. aut Vinter, B. aut Vennéguès, P. aut Laügt, M. aut Buell, D. aut Tesseire-Doninelli, M. aut Neu, G. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 1 vom: 26. Apr., Seite 65-69 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:1 day:26 month:04 pages:65-69 https://doi.org/10.1007/s00339-007-3983-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 1 26 04 65-69
language	English
source	Enthalten in Applied physics. A, Materials science & processing 88(2007), 1 vom: 26. Apr., Seite 65-69 volume:88 year:2007 number:1 day:26 month:04 pages:65-69
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topic_facet	Buffer Layer Quantum Well Stark Effect Thin Buffer Layer Quantum Well Emission
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author	Chauveau, J.-M.
spellingShingle	Chauveau, J.-M. ddc 530 rvk UA 9001.A misc Buffer Layer misc Quantum Well misc Stark Effect misc Thin Buffer Layer misc Quantum Well Emission Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
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title	Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
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title_full	Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
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author_browse	Chauveau, J.-M. Morhain, C. Lo, B. Vinter, B. Vennéguès, P. Laügt, M. Buell, D. Tesseire-Doninelli, M. Neu, G.
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title_sort	growth and characterization of a-plane zno and zncoo based heterostructures
title_auth	Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
abstract	Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. © Springer-Verlag 2007
abstractGer	Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. © Springer-Verlag 2007
abstract_unstemmed	Abstract Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄0) ZnO (A-plane ZnO). The dominant defect lines seen in photoluminescence were due to basal stacking faults as demonstrated by means of selective photoluminescence and transmission electron microscopy. We present a novel method for growing high quality A-plane ZnO by inserting a (Zn, Co)O thin buffer layer, which strongly reduced the surface roughness. Finally (Zn, Mg)O/ZnO quantum well structures were grown on such a buffer layer. These quantum wells exhibited no intrinsic quantum confined Stark effect. © Springer-Verlag 2007
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title_short	Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
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