High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures
Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with inc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, M.J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Anmerkung: |
© Springer-Verlag 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 88(2007), 4 vom: 13. Juni, Seite 715-718 |
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| Übergeordnetes Werk: |
volume:88 ; year:2007 ; number:4 ; day:13 ; month:06 ; pages:715-718 |
| Links: |
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| DOI / URN: |
10.1007/s00339-007-4034-5 |
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OLC207418171X |
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| 520 | |a Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. | ||
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| 700 | 1 | |a Shen, B. |4 aut | |
| 700 | 1 | |a Xu, F.J. |4 aut | |
| 700 | 1 | |a Wang, Y. |4 aut | |
| 700 | 1 | |a Xu, J. |4 aut | |
| 700 | 1 | |a Huang, S. |4 aut | |
| 700 | 1 | |a Yang, Z.J. |4 aut | |
| 700 | 1 | |a Xu, K. |4 aut | |
| 700 | 1 | |a Zhang, G.Y. |4 aut | |
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10.1007/s00339-007-4034-5 doi (DE-627)OLC207418171X (DE-He213)s00339-007-4034-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Wang, M.J. verfasserin aut High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. Conduction Band 2DEG Density High Temperature Dependence Sheet Electron Concentration Background Electron Concentration Shen, B. aut Xu, F.J. aut Wang, Y. aut Xu, J. aut Huang, S. aut Yang, Z.J. aut Xu, K. aut Zhang, G.Y. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 4 vom: 13. Juni, Seite 715-718 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:4 day:13 month:06 pages:715-718 https://doi.org/10.1007/s00339-007-4034-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 4 13 06 715-718 |
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10.1007/s00339-007-4034-5 doi (DE-627)OLC207418171X (DE-He213)s00339-007-4034-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Wang, M.J. verfasserin aut High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. Conduction Band 2DEG Density High Temperature Dependence Sheet Electron Concentration Background Electron Concentration Shen, B. aut Xu, F.J. aut Wang, Y. aut Xu, J. aut Huang, S. aut Yang, Z.J. aut Xu, K. aut Zhang, G.Y. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 4 vom: 13. Juni, Seite 715-718 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:4 day:13 month:06 pages:715-718 https://doi.org/10.1007/s00339-007-4034-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 4 13 06 715-718 |
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10.1007/s00339-007-4034-5 doi (DE-627)OLC207418171X (DE-He213)s00339-007-4034-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Wang, M.J. verfasserin aut High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. Conduction Band 2DEG Density High Temperature Dependence Sheet Electron Concentration Background Electron Concentration Shen, B. aut Xu, F.J. aut Wang, Y. aut Xu, J. aut Huang, S. aut Yang, Z.J. aut Xu, K. aut Zhang, G.Y. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 4 vom: 13. Juni, Seite 715-718 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:4 day:13 month:06 pages:715-718 https://doi.org/10.1007/s00339-007-4034-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 4 13 06 715-718 |
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10.1007/s00339-007-4034-5 doi (DE-627)OLC207418171X (DE-He213)s00339-007-4034-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Wang, M.J. verfasserin aut High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. Conduction Band 2DEG Density High Temperature Dependence Sheet Electron Concentration Background Electron Concentration Shen, B. aut Xu, F.J. aut Wang, Y. aut Xu, J. aut Huang, S. aut Yang, Z.J. aut Xu, K. aut Zhang, G.Y. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 4 vom: 13. Juni, Seite 715-718 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:4 day:13 month:06 pages:715-718 https://doi.org/10.1007/s00339-007-4034-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 4 13 06 715-718 |
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10.1007/s00339-007-4034-5 doi (DE-627)OLC207418171X (DE-He213)s00339-007-4034-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Wang, M.J. verfasserin aut High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. Conduction Band 2DEG Density High Temperature Dependence Sheet Electron Concentration Background Electron Concentration Shen, B. aut Xu, F.J. aut Wang, Y. aut Xu, J. aut Huang, S. aut Yang, Z.J. aut Xu, K. aut Zhang, G.Y. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 88(2007), 4 vom: 13. Juni, Seite 715-718 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:88 year:2007 number:4 day:13 month:06 pages:715-718 https://doi.org/10.1007/s00339-007-4034-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 88 2007 4 13 06 715-718 |
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Enthalten in Applied physics. A, Materials science & processing 88(2007), 4 vom: 13. Juni, Seite 715-718 volume:88 year:2007 number:4 day:13 month:06 pages:715-718 |
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high temperature dependence of the density of two-dimensional electron gas in $ al_{0.18} $$ ga_{0.82} $n/gan heterostructures |
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High temperature dependence of the density of two-dimensional electron gas in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures |
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Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. © Springer-Verlag 2007 |
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Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. © Springer-Verlag 2007 |
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Abstract Temperature dependence of the density of two-dimensional electron gas (2DEG) in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures has been investigated by means of high temperature Hall measurements ranging from room temperature to 500 °C. It is found that the 2DEG density decreases with increasing temperature in the range from room temperature to 250 °C, and then increases with the temperature above 250 °C. It is thought that the decrease of the 2DEG density from room temperature to 250 °C is caused by the reduction of the conduction band offset at high temperatures. The increase of measured 2DEG density at higher temperatures is attributed to the background electron concentration in the GaN layer. Theoretical calculation of the 2DEG density in $ Al_{0.18} $$ Ga_{0.82} $N/GaN heterostructures at various temperatures is consistent with the experimental results using the multilayer Hall effect model. © Springer-Verlag 2007 |
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