Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique

Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes....
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Banerjee, A.N. [verfasserIn] Krishna, R. Das, B.

Format:	Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	Cluster Size Cluster Growth Aggregation Region Deposition Pressure Cluster Source

Systematik:	UA 9001.A

Anmerkung:	© Springer-Verlag 2007

Übergeordnetes Werk:	Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 90(2007), 2 vom: 12. Sept., Seite 299-303
Übergeordnetes Werk:	volume:90 ; year:2007 ; number:2 ; day:12 ; month:09 ; pages:299-303

Links:	Volltext

DOI / URN:	10.1007/s00339-007-4271-7

Katalog-ID:	OLC2074183968

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allfields	10.1007/s00339-007-4271-7 doi (DE-627)OLC2074183968 (DE-He213)s00339-007-4271-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Banerjee, A.N. verfasserin aut Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. Cluster Size Cluster Growth Aggregation Region Deposition Pressure Cluster Source Krishna, R. aut Das, B. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 90(2007), 2 vom: 12. Sept., Seite 299-303 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:90 year:2007 number:2 day:12 month:09 pages:299-303 https://doi.org/10.1007/s00339-007-4271-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 90 2007 2 12 09 299-303
spelling	10.1007/s00339-007-4271-7 doi (DE-627)OLC2074183968 (DE-He213)s00339-007-4271-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Banerjee, A.N. verfasserin aut Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. Cluster Size Cluster Growth Aggregation Region Deposition Pressure Cluster Source Krishna, R. aut Das, B. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 90(2007), 2 vom: 12. Sept., Seite 299-303 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:90 year:2007 number:2 day:12 month:09 pages:299-303 https://doi.org/10.1007/s00339-007-4271-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 90 2007 2 12 09 299-303
allfields_unstemmed	10.1007/s00339-007-4271-7 doi (DE-627)OLC2074183968 (DE-He213)s00339-007-4271-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Banerjee, A.N. verfasserin aut Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. Cluster Size Cluster Growth Aggregation Region Deposition Pressure Cluster Source Krishna, R. aut Das, B. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 90(2007), 2 vom: 12. Sept., Seite 299-303 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:90 year:2007 number:2 day:12 month:09 pages:299-303 https://doi.org/10.1007/s00339-007-4271-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 90 2007 2 12 09 299-303
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allfieldsSound	10.1007/s00339-007-4271-7 doi (DE-627)OLC2074183968 (DE-He213)s00339-007-4271-7-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Banerjee, A.N. verfasserin aut Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2007 Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. Cluster Size Cluster Growth Aggregation Region Deposition Pressure Cluster Source Krishna, R. aut Das, B. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 90(2007), 2 vom: 12. Sept., Seite 299-303 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:90 year:2007 number:2 day:12 month:09 pages:299-303 https://doi.org/10.1007/s00339-007-4271-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 90 2007 2 12 09 299-303
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source	Enthalten in Applied physics. A, Materials science & processing 90(2007), 2 vom: 12. Sept., Seite 299-303 volume:90 year:2007 number:2 day:12 month:09 pages:299-303
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author	Banerjee, A.N.
spellingShingle	Banerjee, A.N. ddc 530 rvk UA 9001.A misc Cluster Size misc Cluster Growth misc Aggregation Region misc Deposition Pressure misc Cluster Source Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
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title	Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
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title_full	Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
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title_sort	size controlled deposition of cu and si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
title_auth	Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
abstract	Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. © Springer-Verlag 2007
abstractGer	Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. © Springer-Verlag 2007
abstract_unstemmed	Abstract In this paper we have reported the syntheses of copper and silicon nano-clusters by a sputtering-gas-aggregation type growth technique. The process involves typical magnetron sputtering vaporization of target materials followed by an inert gas condensation to form clusters of varying sizes. The size-distributions of the clusters typically follow a normal-distribution and the peak cluster sizes of the distributions depends on several factors, which include gas-flow rate, length of the growth region, deposition pressure etc. We have observed a variation in the peak cluster size with the variation of the gas (argon) flow rates. The experimental values are compared with the existing models and the results are found to be in good agreement. The results are significant since it demonstrates that proper optimization of operation conditions can lead to desired cluster sizes as well as desired cluster-size distributions. © Springer-Verlag 2007
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title_short	Size controlled deposition of Cu and Si nano-clusters by an ultra-high vacuum sputtering gas aggregation technique
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