Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C u...
Ausführliche Beschreibung
Autor*in: |
Traversa, M. [verfasserIn] |
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Englisch |
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2008 |
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Anmerkung: |
© Springer-Verlag 2008 |
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Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 91(2008), 1 vom: 25. Jan., Seite 23-28 |
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Übergeordnetes Werk: |
volume:91 ; year:2008 ; number:1 ; day:25 ; month:01 ; pages:23-28 |
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DOI / URN: |
10.1007/s00339-007-4382-1 |
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Katalog-ID: |
OLC2074184980 |
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520 | |a Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. | ||
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10.1007/s00339-007-4382-1 doi (DE-627)OLC2074184980 (DE-He213)s00339-007-4382-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)OLC2074184980 (DE-He213)s00339-007-4382-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)OLC2074184980 (DE-He213)s00339-007-4382-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)OLC2074184980 (DE-He213)s00339-007-4382-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)OLC2074184980 (DE-He213)s00339-007-4382-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 1 25 01 23-28 |
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Traversa, M. |
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Traversa, M. ddc 530 rvk UA 9001.A misc ZnTe misc CdTe Layer misc CdTe Crystal misc CdTe Substrate misc Rough Surface Morphology Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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530 620 VZ 530 VZ UA 9001.A VZ rvk Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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substrate treatment and precursor stoichiometry effects on the homoepitaxy of cdte grown by movpe on detector-grade (111)b-cdte crystals |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
abstract |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
abstractGer |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
abstract_unstemmed |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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