Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution
Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structu...
Ausführliche Beschreibung
Autor*in: |
Meijer, J. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2008 |
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Schlagwörter: |
Atomic Force Microscope System |
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Systematik: |
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Anmerkung: |
© Springer-Verlag 2008 |
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Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 91(2008), 4 vom: 01. Mai, Seite 567-571 |
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Übergeordnetes Werk: |
volume:91 ; year:2008 ; number:4 ; day:01 ; month:05 ; pages:567-571 |
Links: |
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DOI / URN: |
10.1007/s00339-008-4515-1 |
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Katalog-ID: |
OLC2074185847 |
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520 | |a Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. | ||
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700 | 1 | |a Pezzagna, S. |4 aut | |
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700 | 1 | |a Jelezko, F. |4 aut | |
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700 | 1 | |a Schmidt-Kaler, F. |4 aut | |
700 | 1 | |a Schnitzler, W. |4 aut | |
700 | 1 | |a Singer, K. |4 aut | |
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10.1007/s00339-008-4515-1 doi (DE-627)OLC2074185847 (DE-He213)s00339-008-4515-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Meijer, J. verfasserin aut Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. Atomic Force Microscope Atomic Force Microscope System Atomic Force Microscope Operation Nanoparticle Beam Atomic Force Microscope Device Pezzagna, S. aut Vogel, T. aut Burchard, B. aut Bukow, H.H. aut Rangelow, I.W. aut Sarov, Y. aut Wiggers, H. aut Plümel, I. aut Jelezko, F. aut Wrachtrup, J. aut Schmidt-Kaler, F. aut Schnitzler, W. aut Singer, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 4 vom: 01. Mai, Seite 567-571 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:4 day:01 month:05 pages:567-571 https://doi.org/10.1007/s00339-008-4515-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 4 01 05 567-571 |
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10.1007/s00339-008-4515-1 doi (DE-627)OLC2074185847 (DE-He213)s00339-008-4515-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Meijer, J. verfasserin aut Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. Atomic Force Microscope Atomic Force Microscope System Atomic Force Microscope Operation Nanoparticle Beam Atomic Force Microscope Device Pezzagna, S. aut Vogel, T. aut Burchard, B. aut Bukow, H.H. aut Rangelow, I.W. aut Sarov, Y. aut Wiggers, H. aut Plümel, I. aut Jelezko, F. aut Wrachtrup, J. aut Schmidt-Kaler, F. aut Schnitzler, W. aut Singer, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 4 vom: 01. Mai, Seite 567-571 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:4 day:01 month:05 pages:567-571 https://doi.org/10.1007/s00339-008-4515-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 4 01 05 567-571 |
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10.1007/s00339-008-4515-1 doi (DE-627)OLC2074185847 (DE-He213)s00339-008-4515-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Meijer, J. verfasserin aut Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. Atomic Force Microscope Atomic Force Microscope System Atomic Force Microscope Operation Nanoparticle Beam Atomic Force Microscope Device Pezzagna, S. aut Vogel, T. aut Burchard, B. aut Bukow, H.H. aut Rangelow, I.W. aut Sarov, Y. aut Wiggers, H. aut Plümel, I. aut Jelezko, F. aut Wrachtrup, J. aut Schmidt-Kaler, F. aut Schnitzler, W. aut Singer, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 4 vom: 01. Mai, Seite 567-571 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:4 day:01 month:05 pages:567-571 https://doi.org/10.1007/s00339-008-4515-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 4 01 05 567-571 |
allfieldsGer |
10.1007/s00339-008-4515-1 doi (DE-627)OLC2074185847 (DE-He213)s00339-008-4515-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Meijer, J. verfasserin aut Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. Atomic Force Microscope Atomic Force Microscope System Atomic Force Microscope Operation Nanoparticle Beam Atomic Force Microscope Device Pezzagna, S. aut Vogel, T. aut Burchard, B. aut Bukow, H.H. aut Rangelow, I.W. aut Sarov, Y. aut Wiggers, H. aut Plümel, I. aut Jelezko, F. aut Wrachtrup, J. aut Schmidt-Kaler, F. aut Schnitzler, W. aut Singer, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 4 vom: 01. Mai, Seite 567-571 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:4 day:01 month:05 pages:567-571 https://doi.org/10.1007/s00339-008-4515-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 4 01 05 567-571 |
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10.1007/s00339-008-4515-1 doi (DE-627)OLC2074185847 (DE-He213)s00339-008-4515-1-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Meijer, J. verfasserin aut Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2008 Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. Atomic Force Microscope Atomic Force Microscope System Atomic Force Microscope Operation Nanoparticle Beam Atomic Force Microscope Device Pezzagna, S. aut Vogel, T. aut Burchard, B. aut Bukow, H.H. aut Rangelow, I.W. aut Sarov, Y. aut Wiggers, H. aut Plümel, I. aut Jelezko, F. aut Wrachtrup, J. aut Schmidt-Kaler, F. aut Schnitzler, W. aut Singer, K. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 91(2008), 4 vom: 01. Mai, Seite 567-571 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:91 year:2008 number:4 day:01 month:05 pages:567-571 https://doi.org/10.1007/s00339-008-4515-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2010 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 91 2008 4 01 05 567-571 |
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Meijer, J. @@aut@@ Pezzagna, S. @@aut@@ Vogel, T. @@aut@@ Burchard, B. @@aut@@ Bukow, H.H. @@aut@@ Rangelow, I.W. @@aut@@ Sarov, Y. @@aut@@ Wiggers, H. @@aut@@ Plümel, I. @@aut@@ Jelezko, F. @@aut@@ Wrachtrup, J. @@aut@@ Schmidt-Kaler, F. @@aut@@ Schnitzler, W. @@aut@@ Singer, K. @@aut@@ |
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Meijer, J. Pezzagna, S. Vogel, T. Burchard, B. Bukow, H.H. Rangelow, I.W. Sarov, Y. Wiggers, H. Plümel, I. Jelezko, F. Wrachtrup, J. Schmidt-Kaler, F. Schnitzler, W. Singer, K. |
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Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution |
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Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. © Springer-Verlag 2008 |
abstractGer |
Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. © Springer-Verlag 2008 |
abstract_unstemmed |
Abstract Decreasing structure sizes in both conventional and quantum solid state devices require novel fabrication methods: we present a technology which allows to implant ions through a small hole in the tip of an atomic force microscope. This technique offers a maskless addressing of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV. Our method aims to implant single atomic ions, molecular ions or charged nanoparticles with nm resolution. We test the method by implanting $ N^{+} $ ions into diamond and generating nitrogen-vacancy color centers. The system is operated with a conventional ion gun. However, in future we will employ an ion trap as a deterministic source of cold single ions. © Springer-Verlag 2008 |
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