Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory
Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the...
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| Autor*in: |
Jeong, Hu Young [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
Resistive Random Access Memory |
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| Systematik: |
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| Anmerkung: |
© Springer-Verlag 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 102(2011), 4 vom: 21. Jan., Seite 967-972 |
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| Übergeordnetes Werk: |
volume:102 ; year:2011 ; number:4 ; day:21 ; month:01 ; pages:967-972 |
| Links: |
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| DOI / URN: |
10.1007/s00339-011-6278-3 |
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| Katalog-ID: |
OLC2074199473 |
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| 245 | 1 | 0 | |a Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory |
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| 520 | |a Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. | ||
| 650 | 4 | |a Resistive Switching | |
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| 650 | 4 | |a Resistive Random Access Memory | |
| 650 | 4 | |a Resistive Random Access Memory Device | |
| 650 | 4 | |a Bipolar Resistive Switching | |
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| 700 | 1 | |a Lee, Jeong Yong |4 aut | |
| 700 | 1 | |a Choi, Sung-Yool |4 aut | |
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10.1007/s00339-011-6278-3 doi (DE-627)OLC2074199473 (DE-He213)s00339-011-6278-3-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Jeong, Hu Young verfasserin aut Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. Resistive Switching High Resistance State Resistive Random Access Memory Resistive Random Access Memory Device Bipolar Resistive Switching Kim, Sung Kyu aut Lee, Jeong Yong aut Choi, Sung-Yool aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 21. Jan., Seite 967-972 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:21 month:01 pages:967-972 https://doi.org/10.1007/s00339-011-6278-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 21 01 967-972 |
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10.1007/s00339-011-6278-3 doi (DE-627)OLC2074199473 (DE-He213)s00339-011-6278-3-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Jeong, Hu Young verfasserin aut Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. Resistive Switching High Resistance State Resistive Random Access Memory Resistive Random Access Memory Device Bipolar Resistive Switching Kim, Sung Kyu aut Lee, Jeong Yong aut Choi, Sung-Yool aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 21. Jan., Seite 967-972 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:21 month:01 pages:967-972 https://doi.org/10.1007/s00339-011-6278-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 21 01 967-972 |
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10.1007/s00339-011-6278-3 doi (DE-627)OLC2074199473 (DE-He213)s00339-011-6278-3-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Jeong, Hu Young verfasserin aut Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. Resistive Switching High Resistance State Resistive Random Access Memory Resistive Random Access Memory Device Bipolar Resistive Switching Kim, Sung Kyu aut Lee, Jeong Yong aut Choi, Sung-Yool aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 21. Jan., Seite 967-972 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:21 month:01 pages:967-972 https://doi.org/10.1007/s00339-011-6278-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 21 01 967-972 |
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10.1007/s00339-011-6278-3 doi (DE-627)OLC2074199473 (DE-He213)s00339-011-6278-3-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Jeong, Hu Young verfasserin aut Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. Resistive Switching High Resistance State Resistive Random Access Memory Resistive Random Access Memory Device Bipolar Resistive Switching Kim, Sung Kyu aut Lee, Jeong Yong aut Choi, Sung-Yool aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 21. Jan., Seite 967-972 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:21 month:01 pages:967-972 https://doi.org/10.1007/s00339-011-6278-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 21 01 967-972 |
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10.1007/s00339-011-6278-3 doi (DE-627)OLC2074199473 (DE-He213)s00339-011-6278-3-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Jeong, Hu Young verfasserin aut Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. Resistive Switching High Resistance State Resistive Random Access Memory Resistive Random Access Memory Device Bipolar Resistive Switching Kim, Sung Kyu aut Lee, Jeong Yong aut Choi, Sung-Yool aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 21. Jan., Seite 967-972 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:21 month:01 pages:967-972 https://doi.org/10.1007/s00339-011-6278-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 21 01 967-972 |
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Impact of amorphous titanium oxide film on the device stability of Al/$ TiO_{2} $/Al resistive memory |
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Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. © Springer-Verlag 2011 |
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Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. © Springer-Verlag 2011 |
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Abstract We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/$ TiO_{2} $/Al resistive random access memory devices. As $ TiO_{2} $ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/$ TiO_{2} $/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the $ TiO_{2} $ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown $ TiO_{2} $ devices to the amorphous state with a low film density. © Springer-Verlag 2011 |
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