Inherent diode isolation in programmable metallization cell resistive memory elements
Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches...
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Gespeichert in:
| Autor*in: |
Puthentheradam, Sarath C. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Anmerkung: |
© Springer-Verlag 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 102(2011), 4 vom: 26. Jan., Seite 817-826 |
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| Übergeordnetes Werk: |
volume:102 ; year:2011 ; number:4 ; day:26 ; month:01 ; pages:817-826 |
| Links: |
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| DOI / URN: |
10.1007/s00339-011-6292-5 |
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| Katalog-ID: |
OLC2074199686 |
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| 520 | |a Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. | ||
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10.1007/s00339-011-6292-5 doi (DE-627)OLC2074199686 (DE-He213)s00339-011-6292-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Puthentheradam, Sarath C. verfasserin aut Inherent diode isolation in programmable metallization cell resistive memory elements 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. Reverse Bias Reverse Bias Voltage Thermionic Emission Model Total Leakage Current Crossbar Architecture Schroder, Dieter K. aut Kozicki, Michael N. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 26. Jan., Seite 817-826 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:26 month:01 pages:817-826 https://doi.org/10.1007/s00339-011-6292-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 26 01 817-826 |
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10.1007/s00339-011-6292-5 doi (DE-627)OLC2074199686 (DE-He213)s00339-011-6292-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Puthentheradam, Sarath C. verfasserin aut Inherent diode isolation in programmable metallization cell resistive memory elements 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2011 Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. Reverse Bias Reverse Bias Voltage Thermionic Emission Model Total Leakage Current Crossbar Architecture Schroder, Dieter K. aut Kozicki, Michael N. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 102(2011), 4 vom: 26. Jan., Seite 817-826 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:102 year:2011 number:4 day:26 month:01 pages:817-826 https://doi.org/10.1007/s00339-011-6292-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 102 2011 4 26 01 817-826 |
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Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. © Springer-Verlag 2011 |
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Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. © Springer-Verlag 2011 |
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Abstract The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–$ SiO_{2} $/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–$ SiO_{2} $ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–$ SiO_{2} $/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays. © Springer-Verlag 2011 |
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