The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates
Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Lei [verfasserIn] |
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Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Anmerkung: |
© Springer-Verlag 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 108(2012), 4 vom: 31. Mai, Seite 857-862 |
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| Übergeordnetes Werk: |
volume:108 ; year:2012 ; number:4 ; day:31 ; month:05 ; pages:857-862 |
| Links: |
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| DOI / URN: |
10.1007/s00339-012-6984-5 |
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| Katalog-ID: |
OLC2074208081 |
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| 245 | 1 | 0 | |a The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates |
| 264 | 1 | |c 2012 | |
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| 520 | |a Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. | ||
| 650 | 4 | |a Hole Concentration | |
| 650 | 4 | |a Hall Mobility | |
| 650 | 4 | |a Thread Dislocation Density | |
| 650 | 4 | |a Metal Organic Vapor Phase Epitaxy | |
| 650 | 4 | |a AlGaN Barrier | |
| 700 | 1 | |a Liu, Lei |4 aut | |
| 700 | 1 | |a Wang, Lei |4 aut | |
| 700 | 1 | |a Li, Ding |4 aut | |
| 700 | 1 | |a Song, Jie |4 aut | |
| 700 | 1 | |a Liu, Ningyang |4 aut | |
| 700 | 1 | |a Chen, Weihua |4 aut | |
| 700 | 1 | |a Wang, Yuzhou |4 aut | |
| 700 | 1 | |a Yang, Zhijian |4 aut | |
| 700 | 1 | |a Hu, Xiaodong |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Applied physics. A, Materials science & processing |d Springer-Verlag, 1981 |g 108(2012), 4 vom: 31. Mai, Seite 857-862 |w (DE-627)129861340 |w (DE-600)283365-7 |w (DE-576)015171930 |x 0947-8396 |7 nnns |
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10.1007/s00339-012-6984-5 doi (DE-627)OLC2074208081 (DE-He213)s00339-012-6984-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Li, Lei verfasserin aut The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. Hole Concentration Hall Mobility Thread Dislocation Density Metal Organic Vapor Phase Epitaxy AlGaN Barrier Liu, Lei aut Wang, Lei aut Li, Ding aut Song, Jie aut Liu, Ningyang aut Chen, Weihua aut Wang, Yuzhou aut Yang, Zhijian aut Hu, Xiaodong aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 108(2012), 4 vom: 31. Mai, Seite 857-862 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:108 year:2012 number:4 day:31 month:05 pages:857-862 https://doi.org/10.1007/s00339-012-6984-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 108 2012 4 31 05 857-862 |
| spelling |
10.1007/s00339-012-6984-5 doi (DE-627)OLC2074208081 (DE-He213)s00339-012-6984-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Li, Lei verfasserin aut The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. Hole Concentration Hall Mobility Thread Dislocation Density Metal Organic Vapor Phase Epitaxy AlGaN Barrier Liu, Lei aut Wang, Lei aut Li, Ding aut Song, Jie aut Liu, Ningyang aut Chen, Weihua aut Wang, Yuzhou aut Yang, Zhijian aut Hu, Xiaodong aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 108(2012), 4 vom: 31. Mai, Seite 857-862 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:108 year:2012 number:4 day:31 month:05 pages:857-862 https://doi.org/10.1007/s00339-012-6984-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 108 2012 4 31 05 857-862 |
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10.1007/s00339-012-6984-5 doi (DE-627)OLC2074208081 (DE-He213)s00339-012-6984-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Li, Lei verfasserin aut The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. Hole Concentration Hall Mobility Thread Dislocation Density Metal Organic Vapor Phase Epitaxy AlGaN Barrier Liu, Lei aut Wang, Lei aut Li, Ding aut Song, Jie aut Liu, Ningyang aut Chen, Weihua aut Wang, Yuzhou aut Yang, Zhijian aut Hu, Xiaodong aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 108(2012), 4 vom: 31. Mai, Seite 857-862 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:108 year:2012 number:4 day:31 month:05 pages:857-862 https://doi.org/10.1007/s00339-012-6984-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 108 2012 4 31 05 857-862 |
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10.1007/s00339-012-6984-5 doi (DE-627)OLC2074208081 (DE-He213)s00339-012-6984-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Li, Lei verfasserin aut The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. Hole Concentration Hall Mobility Thread Dislocation Density Metal Organic Vapor Phase Epitaxy AlGaN Barrier Liu, Lei aut Wang, Lei aut Li, Ding aut Song, Jie aut Liu, Ningyang aut Chen, Weihua aut Wang, Yuzhou aut Yang, Zhijian aut Hu, Xiaodong aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 108(2012), 4 vom: 31. Mai, Seite 857-862 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:108 year:2012 number:4 day:31 month:05 pages:857-862 https://doi.org/10.1007/s00339-012-6984-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 108 2012 4 31 05 857-862 |
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10.1007/s00339-012-6984-5 doi (DE-627)OLC2074208081 (DE-He213)s00339-012-6984-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Li, Lei verfasserin aut The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. Hole Concentration Hall Mobility Thread Dislocation Density Metal Organic Vapor Phase Epitaxy AlGaN Barrier Liu, Lei aut Wang, Lei aut Li, Ding aut Song, Jie aut Liu, Ningyang aut Chen, Weihua aut Wang, Yuzhou aut Yang, Zhijian aut Hu, Xiaodong aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 108(2012), 4 vom: 31. Mai, Seite 857-862 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:108 year:2012 number:4 day:31 month:05 pages:857-862 https://doi.org/10.1007/s00339-012-6984-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 108 2012 4 31 05 857-862 |
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Enthalten in Applied physics. A, Materials science & processing 108(2012), 4 vom: 31. Mai, Seite 857-862 volume:108 year:2012 number:4 day:31 month:05 pages:857-862 |
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It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. 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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates |
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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates |
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Li, Lei |
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Li, Lei Liu, Lei Wang, Lei Li, Ding Song, Jie Liu, Ningyang Chen, Weihua Wang, Yuzhou Yang, Zhijian Hu, Xiaodong |
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the influence of aln interlayers on the microstructural and electrical properties of p-type algan/gan superlattices grown on gan/sapphire templates |
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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates |
| abstract |
Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. © Springer-Verlag 2012 |
| abstractGer |
Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. © Springer-Verlag 2012 |
| abstract_unstemmed |
Abstract AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type $ Al_{0.15} $$ Ga_{0.85} $N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×$ 10^{9} $ $ cm^{−2} $ without AlN IL to the maximum of 1×$ 10^{10} $ $ cm^{−2} $ at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type $ Al_{x} $$ Ga_{1−x} $N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. © Springer-Verlag 2012 |
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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates |
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