A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition
Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by u...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Martín-Sánchez, J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Systematik: |
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| Anmerkung: |
© Springer-Verlag 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 110(2012), 3 vom: 29. Aug., Seite 585-590 |
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| Übergeordnetes Werk: |
volume:110 ; year:2012 ; number:3 ; day:29 ; month:08 ; pages:585-590 |
| Links: |
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| DOI / URN: |
10.1007/s00339-012-7131-z |
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| Katalog-ID: |
OLC2074210841 |
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| 245 | 1 | 0 | |a A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition |
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| 520 | |a Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. | ||
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10.1007/s00339-012-7131-z doi (DE-627)OLC2074210841 (DE-He213)s00339-012-7131-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Martín-Sánchez, J. verfasserin aut A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. Pulse Laser Deposition Plasma Plume Round Shape Particle High Resolution Atomic Force Microscopy Image Laser Beam Focal Point Chahboun, A. aut Pinto, S. R. C. aut Rolo, A. G. aut Marques, L. aut Serna, R. aut Vieira, E. M. F. aut Ramos, M. M. D. aut Gomes, M. J. M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 110(2012), 3 vom: 29. Aug., Seite 585-590 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:110 year:2012 number:3 day:29 month:08 pages:585-590 https://doi.org/10.1007/s00339-012-7131-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 110 2012 3 29 08 585-590 |
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10.1007/s00339-012-7131-z doi (DE-627)OLC2074210841 (DE-He213)s00339-012-7131-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Martín-Sánchez, J. verfasserin aut A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. Pulse Laser Deposition Plasma Plume Round Shape Particle High Resolution Atomic Force Microscopy Image Laser Beam Focal Point Chahboun, A. aut Pinto, S. R. C. aut Rolo, A. G. aut Marques, L. aut Serna, R. aut Vieira, E. M. F. aut Ramos, M. M. D. aut Gomes, M. J. M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 110(2012), 3 vom: 29. Aug., Seite 585-590 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:110 year:2012 number:3 day:29 month:08 pages:585-590 https://doi.org/10.1007/s00339-012-7131-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 110 2012 3 29 08 585-590 |
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10.1007/s00339-012-7131-z doi (DE-627)OLC2074210841 (DE-He213)s00339-012-7131-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Martín-Sánchez, J. verfasserin aut A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. Pulse Laser Deposition Plasma Plume Round Shape Particle High Resolution Atomic Force Microscopy Image Laser Beam Focal Point Chahboun, A. aut Pinto, S. R. C. aut Rolo, A. G. aut Marques, L. aut Serna, R. aut Vieira, E. M. F. aut Ramos, M. M. D. aut Gomes, M. J. M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 110(2012), 3 vom: 29. Aug., Seite 585-590 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:110 year:2012 number:3 day:29 month:08 pages:585-590 https://doi.org/10.1007/s00339-012-7131-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 110 2012 3 29 08 585-590 |
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10.1007/s00339-012-7131-z doi (DE-627)OLC2074210841 (DE-He213)s00339-012-7131-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Martín-Sánchez, J. verfasserin aut A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. Pulse Laser Deposition Plasma Plume Round Shape Particle High Resolution Atomic Force Microscopy Image Laser Beam Focal Point Chahboun, A. aut Pinto, S. R. C. aut Rolo, A. G. aut Marques, L. aut Serna, R. aut Vieira, E. M. F. aut Ramos, M. M. D. aut Gomes, M. J. M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 110(2012), 3 vom: 29. Aug., Seite 585-590 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:110 year:2012 number:3 day:29 month:08 pages:585-590 https://doi.org/10.1007/s00339-012-7131-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 110 2012 3 29 08 585-590 |
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10.1007/s00339-012-7131-z doi (DE-627)OLC2074210841 (DE-He213)s00339-012-7131-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Martín-Sánchez, J. verfasserin aut A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. Pulse Laser Deposition Plasma Plume Round Shape Particle High Resolution Atomic Force Microscopy Image Laser Beam Focal Point Chahboun, A. aut Pinto, S. R. C. aut Rolo, A. G. aut Marques, L. aut Serna, R. aut Vieira, E. M. F. aut Ramos, M. M. D. aut Gomes, M. J. M. aut Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 110(2012), 3 vom: 29. Aug., Seite 585-590 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:110 year:2012 number:3 day:29 month:08 pages:585-590 https://doi.org/10.1007/s00339-012-7131-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 110 2012 3 29 08 585-590 |
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Martín-Sánchez, J. Chahboun, A. Pinto, S. R. C. Rolo, A. G. Marques, L. Serna, R. Vieira, E. M. F. Ramos, M. M. D. Gomes, M. J. M. |
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a shadowed off-axis production of ge nanoparticles in ar gas atmosphere by pulsed laser deposition |
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A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition |
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Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. © Springer-Verlag 2012 |
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Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. © Springer-Verlag 2012 |
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Abstract In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions. © Springer-Verlag 2012 |
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