Ge-content dependent efficiency of Si/SiGe heterojunction solar cell
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlin...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Das, Mukul K. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Systematik: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer Berlin Heidelberg, 1981, 112(2013), 3 vom: 29. Mai, Seite 543-548 |
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| Übergeordnetes Werk: |
volume:112 ; year:2013 ; number:3 ; day:29 ; month:05 ; pages:543-548 |
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| DOI / URN: |
10.1007/s00339-013-7761-9 |
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OLC2074214030 |
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| 520 | |a Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. | ||
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10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
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ge-content dependent efficiency of si/sige heterojunction solar cell |
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Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
| abstract |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
| abstractGer |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
| abstract_unstemmed |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
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| title_short |
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
| url |
https://doi.org/10.1007/s00339-013-7761-9 |
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| author2 |
Choudhary, Santosh K. |
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Choudhary, Santosh K. |
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| doi_str |
10.1007/s00339-013-7761-9 |
| up_date |
2024-07-03T21:23:29.604Z |
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