Ge-content dependent efficiency of Si/SiGe heterojunction solar cell
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlin...
Ausführliche Beschreibung
Autor*in: |
Das, Mukul K. [verfasserIn] |
---|
Format: |
Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2013 |
---|
Schlagwörter: |
---|
Systematik: |
|
---|
Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2013 |
---|
Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer Berlin Heidelberg, 1981, 112(2013), 3 vom: 29. Mai, Seite 543-548 |
---|---|
Übergeordnetes Werk: |
volume:112 ; year:2013 ; number:3 ; day:29 ; month:05 ; pages:543-548 |
Links: |
---|
DOI / URN: |
10.1007/s00339-013-7761-9 |
---|
Katalog-ID: |
OLC2074214030 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2074214030 | ||
003 | DE-627 | ||
005 | 20230331131903.0 | ||
007 | tu | ||
008 | 200819s2013 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/s00339-013-7761-9 |2 doi | |
035 | |a (DE-627)OLC2074214030 | ||
035 | |a (DE-He213)s00339-013-7761-9-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 530 |a 620 |q VZ |
082 | 0 | 4 | |a 530 |q VZ |
084 | |a UA 9001.A |q VZ |2 rvk | ||
100 | 1 | |a Das, Mukul K. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
264 | 1 | |c 2013 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Springer-Verlag Berlin Heidelberg 2013 | ||
520 | |a Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. | ||
650 | 4 | |a Solar Cell | |
650 | 4 | |a Heterojunction Solar Cell | |
650 | 4 | |a SiGe Layer | |
650 | 4 | |a Carrier Trapping | |
650 | 4 | |a Back Surface Field | |
700 | 1 | |a Choudhary, Santosh K. |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Applied physics. A, Materials science & processing |d Springer Berlin Heidelberg, 1981 |g 112(2013), 3 vom: 29. Mai, Seite 543-548 |w (DE-627)129861340 |w (DE-600)283365-7 |w (DE-576)015171930 |x 0947-8396 |7 nnns |
773 | 1 | 8 | |g volume:112 |g year:2013 |g number:3 |g day:29 |g month:05 |g pages:543-548 |
856 | 4 | 1 | |u https://doi.org/10.1007/s00339-013-7761-9 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_30 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_130 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_2018 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4266 | ||
912 | |a GBV_ILN_4277 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4318 | ||
912 | |a GBV_ILN_4319 | ||
912 | |a GBV_ILN_4700 | ||
936 | r | v | |a UA 9001.A |
951 | |a AR | ||
952 | |d 112 |j 2013 |e 3 |b 29 |c 05 |h 543-548 |
author_variant |
m k d mk mkd s k c sk skc |
---|---|
matchkey_str |
article:09478396:2013----::eotndpnetfiinyfiieeeo |
hierarchy_sort_str |
2013 |
publishDate |
2013 |
allfields |
10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
spelling |
10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
allfields_unstemmed |
10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
allfieldsGer |
10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
allfieldsSound |
10.1007/s00339-013-7761-9 doi (DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Das, Mukul K. verfasserin aut Ge-content dependent efficiency of Si/SiGe heterojunction solar cell 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field Choudhary, Santosh K. aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 112(2013), 3 vom: 29. Mai, Seite 543-548 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:112 year:2013 number:3 day:29 month:05 pages:543-548 https://doi.org/10.1007/s00339-013-7761-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 112 2013 3 29 05 543-548 |
language |
English |
source |
Enthalten in Applied physics. A, Materials science & processing 112(2013), 3 vom: 29. Mai, Seite 543-548 volume:112 year:2013 number:3 day:29 month:05 pages:543-548 |
sourceStr |
Enthalten in Applied physics. A, Materials science & processing 112(2013), 3 vom: 29. Mai, Seite 543-548 volume:112 year:2013 number:3 day:29 month:05 pages:543-548 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field |
dewey-raw |
530 |
isfreeaccess_bool |
false |
container_title |
Applied physics. A, Materials science & processing |
authorswithroles_txt_mv |
Das, Mukul K. @@aut@@ Choudhary, Santosh K. @@aut@@ |
publishDateDaySort_date |
2013-05-29T00:00:00Z |
hierarchy_top_id |
129861340 |
dewey-sort |
3530 |
id |
OLC2074214030 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074214030</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331131903.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-013-7761-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074214030</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-013-7761-9-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Das, Mukul K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ge-content dependent efficiency of Si/SiGe heterojunction solar cell</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag Berlin Heidelberg 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solar Cell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Heterojunction Solar Cell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiGe Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Carrier Trapping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Back Surface Field</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choudhary, Santosh K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer Berlin Heidelberg, 1981</subfield><subfield code="g">112(2013), 3 vom: 29. Mai, Seite 543-548</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:112</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:3</subfield><subfield code="g">day:29</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:543-548</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-013-7761-9</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">112</subfield><subfield code="j">2013</subfield><subfield code="e">3</subfield><subfield code="b">29</subfield><subfield code="c">05</subfield><subfield code="h">543-548</subfield></datafield></record></collection>
|
author |
Das, Mukul K. |
spellingShingle |
Das, Mukul K. ddc 530 rvk UA 9001.A misc Solar Cell misc Heterojunction Solar Cell misc SiGe Layer misc Carrier Trapping misc Back Surface Field Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
authorStr |
Das, Mukul K. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129861340 |
format |
Article |
dewey-ones |
530 - Physics 620 - Engineering & allied operations |
delete_txt_mv |
keep |
author_role |
aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0947-8396 |
topic_title |
530 620 VZ 530 VZ UA 9001.A VZ rvk Ge-content dependent efficiency of Si/SiGe heterojunction solar cell Solar Cell Heterojunction Solar Cell SiGe Layer Carrier Trapping Back Surface Field |
topic |
ddc 530 rvk UA 9001.A misc Solar Cell misc Heterojunction Solar Cell misc SiGe Layer misc Carrier Trapping misc Back Surface Field |
topic_unstemmed |
ddc 530 rvk UA 9001.A misc Solar Cell misc Heterojunction Solar Cell misc SiGe Layer misc Carrier Trapping misc Back Surface Field |
topic_browse |
ddc 530 rvk UA 9001.A misc Solar Cell misc Heterojunction Solar Cell misc SiGe Layer misc Carrier Trapping misc Back Surface Field |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Applied physics. A, Materials science & processing |
hierarchy_parent_id |
129861340 |
dewey-tens |
530 - Physics 620 - Engineering |
hierarchy_top_title |
Applied physics. A, Materials science & processing |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 |
title |
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
ctrlnum |
(DE-627)OLC2074214030 (DE-He213)s00339-013-7761-9-p |
title_full |
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
author_sort |
Das, Mukul K. |
journal |
Applied physics. A, Materials science & processing |
journalStr |
Applied physics. A, Materials science & processing |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science 600 - Technology |
recordtype |
marc |
publishDateSort |
2013 |
contenttype_str_mv |
txt |
container_start_page |
543 |
author_browse |
Das, Mukul K. Choudhary, Santosh K. |
container_volume |
112 |
class |
530 620 VZ 530 VZ UA 9001.A VZ rvk |
format_se |
Aufsätze |
author-letter |
Das, Mukul K. |
doi_str_mv |
10.1007/s00339-013-7761-9 |
dewey-full |
530 620 |
title_sort |
ge-content dependent efficiency of si/sige heterojunction solar cell |
title_auth |
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
abstract |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
abstractGer |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
abstract_unstemmed |
Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases. © Springer-Verlag Berlin Heidelberg 2013 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 |
container_issue |
3 |
title_short |
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell |
url |
https://doi.org/10.1007/s00339-013-7761-9 |
remote_bool |
false |
author2 |
Choudhary, Santosh K. |
author2Str |
Choudhary, Santosh K. |
ppnlink |
129861340 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1007/s00339-013-7761-9 |
up_date |
2024-07-03T21:23:29.604Z |
_version_ |
1803594560549421056 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074214030</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331131903.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-013-7761-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074214030</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-013-7761-9-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Das, Mukul K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ge-content dependent efficiency of Si/SiGe heterojunction solar cell</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag Berlin Heidelberg 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Efficiency of n-$ Si_{1−x} $$ Ge_{x} $/p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solar Cell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Heterojunction Solar Cell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiGe Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Carrier Trapping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Back Surface Field</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choudhary, Santosh K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer Berlin Heidelberg, 1981</subfield><subfield code="g">112(2013), 3 vom: 29. Mai, Seite 543-548</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:112</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:3</subfield><subfield code="g">day:29</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:543-548</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-013-7761-9</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">112</subfield><subfield code="j">2013</subfield><subfield code="e">3</subfield><subfield code="b">29</subfield><subfield code="c">05</subfield><subfield code="h">543-548</subfield></datafield></record></collection>
|
score |
7.400257 |