The future of focused electron beam-induced processing
Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being i...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hagen, C. W. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Systematik: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer Berlin Heidelberg, 1981, 117(2014), 4 vom: 07. Nov., Seite 1599-1605 |
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| Übergeordnetes Werk: |
volume:117 ; year:2014 ; number:4 ; day:07 ; month:11 ; pages:1599-1605 |
| Links: |
|---|
| DOI / URN: |
10.1007/s00339-014-8847-8 |
|---|
| Katalog-ID: |
OLC2074224966 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2074224966 | ||
| 003 | DE-627 | ||
| 005 | 20230331132055.0 | ||
| 007 | tu | ||
| 008 | 200819s2014 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s00339-014-8847-8 |2 doi | |
| 035 | |a (DE-627)OLC2074224966 | ||
| 035 | |a (DE-He213)s00339-014-8847-8-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |a 620 |q VZ |
| 082 | 0 | 4 | |a 530 |q VZ |
| 084 | |a UA 9001.A |q VZ |2 rvk | ||
| 100 | 1 | |a Hagen, C. W. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a The future of focused electron beam-induced processing |
| 264 | 1 | |c 2014 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer-Verlag Berlin Heidelberg 2014 | ||
| 520 | |a Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. | ||
| 650 | 4 | |a Electron Beam Lithography | |
| 650 | 4 | |a Precursor Molecule | |
| 650 | 4 | |a Lithography Technique | |
| 650 | 4 | |a Dissociative Electron Attachment | |
| 650 | 4 | |a Primary Electron Beam | |
| 773 | 0 | 8 | |i Enthalten in |t Applied physics. A, Materials science & processing |d Springer Berlin Heidelberg, 1981 |g 117(2014), 4 vom: 07. Nov., Seite 1599-1605 |w (DE-627)129861340 |w (DE-600)283365-7 |w (DE-576)015171930 |x 0947-8396 |7 nnns |
| 773 | 1 | 8 | |g volume:117 |g year:2014 |g number:4 |g day:07 |g month:11 |g pages:1599-1605 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s00339-014-8847-8 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_130 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_2018 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4266 | ||
| 912 | |a GBV_ILN_4277 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4318 | ||
| 912 | |a GBV_ILN_4319 | ||
| 912 | |a GBV_ILN_4700 | ||
| 936 | r | v | |a UA 9001.A |
| 951 | |a AR | ||
| 952 | |d 117 |j 2014 |e 4 |b 07 |c 11 |h 1599-1605 | ||
| author_variant |
c w h cw cwh |
|---|---|
| matchkey_str |
article:09478396:2014----::hftrofcsdlcrnemn |
| hierarchy_sort_str |
2014 |
| publishDate |
2014 |
| allfields |
10.1007/s00339-014-8847-8 doi (DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Hagen, C. W. verfasserin aut The future of focused electron beam-induced processing 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 117(2014), 4 vom: 07. Nov., Seite 1599-1605 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 https://doi.org/10.1007/s00339-014-8847-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 117 2014 4 07 11 1599-1605 |
| spelling |
10.1007/s00339-014-8847-8 doi (DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Hagen, C. W. verfasserin aut The future of focused electron beam-induced processing 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 117(2014), 4 vom: 07. Nov., Seite 1599-1605 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 https://doi.org/10.1007/s00339-014-8847-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 117 2014 4 07 11 1599-1605 |
| allfields_unstemmed |
10.1007/s00339-014-8847-8 doi (DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Hagen, C. W. verfasserin aut The future of focused electron beam-induced processing 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 117(2014), 4 vom: 07. Nov., Seite 1599-1605 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 https://doi.org/10.1007/s00339-014-8847-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 117 2014 4 07 11 1599-1605 |
| allfieldsGer |
10.1007/s00339-014-8847-8 doi (DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Hagen, C. W. verfasserin aut The future of focused electron beam-induced processing 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 117(2014), 4 vom: 07. Nov., Seite 1599-1605 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 https://doi.org/10.1007/s00339-014-8847-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 117 2014 4 07 11 1599-1605 |
| allfieldsSound |
10.1007/s00339-014-8847-8 doi (DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Hagen, C. W. verfasserin aut The future of focused electron beam-induced processing 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 117(2014), 4 vom: 07. Nov., Seite 1599-1605 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 https://doi.org/10.1007/s00339-014-8847-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 117 2014 4 07 11 1599-1605 |
| language |
English |
| source |
Enthalten in Applied physics. A, Materials science & processing 117(2014), 4 vom: 07. Nov., Seite 1599-1605 volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 |
| sourceStr |
Enthalten in Applied physics. A, Materials science & processing 117(2014), 4 vom: 07. Nov., Seite 1599-1605 volume:117 year:2014 number:4 day:07 month:11 pages:1599-1605 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Applied physics. A, Materials science & processing |
| authorswithroles_txt_mv |
Hagen, C. W. @@aut@@ |
| publishDateDaySort_date |
2014-11-07T00:00:00Z |
| hierarchy_top_id |
129861340 |
| dewey-sort |
3530 |
| id |
OLC2074224966 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074224966</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331132055.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2014 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-014-8847-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074224966</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-014-8847-8-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hagen, C. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The future of focused electron beam-induced processing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag Berlin Heidelberg 2014</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Beam Lithography</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Precursor Molecule</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lithography Technique</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dissociative Electron Attachment</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Primary Electron Beam</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer Berlin Heidelberg, 1981</subfield><subfield code="g">117(2014), 4 vom: 07. Nov., Seite 1599-1605</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:117</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:4</subfield><subfield code="g">day:07</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:1599-1605</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-014-8847-8</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">117</subfield><subfield code="j">2014</subfield><subfield code="e">4</subfield><subfield code="b">07</subfield><subfield code="c">11</subfield><subfield code="h">1599-1605</subfield></datafield></record></collection>
|
| author |
Hagen, C. W. |
| spellingShingle |
Hagen, C. W. ddc 530 rvk UA 9001.A misc Electron Beam Lithography misc Precursor Molecule misc Lithography Technique misc Dissociative Electron Attachment misc Primary Electron Beam The future of focused electron beam-induced processing |
| authorStr |
Hagen, C. W. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129861340 |
| format |
Article |
| dewey-ones |
530 - Physics 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0947-8396 |
| topic_title |
530 620 VZ 530 VZ UA 9001.A VZ rvk The future of focused electron beam-induced processing Electron Beam Lithography Precursor Molecule Lithography Technique Dissociative Electron Attachment Primary Electron Beam |
| topic |
ddc 530 rvk UA 9001.A misc Electron Beam Lithography misc Precursor Molecule misc Lithography Technique misc Dissociative Electron Attachment misc Primary Electron Beam |
| topic_unstemmed |
ddc 530 rvk UA 9001.A misc Electron Beam Lithography misc Precursor Molecule misc Lithography Technique misc Dissociative Electron Attachment misc Primary Electron Beam |
| topic_browse |
ddc 530 rvk UA 9001.A misc Electron Beam Lithography misc Precursor Molecule misc Lithography Technique misc Dissociative Electron Attachment misc Primary Electron Beam |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Applied physics. A, Materials science & processing |
| hierarchy_parent_id |
129861340 |
| dewey-tens |
530 - Physics 620 - Engineering |
| hierarchy_top_title |
Applied physics. A, Materials science & processing |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 |
| title |
The future of focused electron beam-induced processing |
| ctrlnum |
(DE-627)OLC2074224966 (DE-He213)s00339-014-8847-8-p |
| title_full |
The future of focused electron beam-induced processing |
| author_sort |
Hagen, C. W. |
| journal |
Applied physics. A, Materials science & processing |
| journalStr |
Applied physics. A, Materials science & processing |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2014 |
| contenttype_str_mv |
txt |
| container_start_page |
1599 |
| author_browse |
Hagen, C. W. |
| container_volume |
117 |
| class |
530 620 VZ 530 VZ UA 9001.A VZ rvk |
| format_se |
Aufsätze |
| author-letter |
Hagen, C. W. |
| doi_str_mv |
10.1007/s00339-014-8847-8 |
| dewey-full |
530 620 |
| title_sort |
the future of focused electron beam-induced processing |
| title_auth |
The future of focused electron beam-induced processing |
| abstract |
Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. © Springer-Verlag Berlin Heidelberg 2014 |
| abstractGer |
Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. © Springer-Verlag Berlin Heidelberg 2014 |
| abstract_unstemmed |
Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. © Springer-Verlag Berlin Heidelberg 2014 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 |
| container_issue |
4 |
| title_short |
The future of focused electron beam-induced processing |
| url |
https://doi.org/10.1007/s00339-014-8847-8 |
| remote_bool |
false |
| ppnlink |
129861340 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s00339-014-8847-8 |
| up_date |
2024-07-03T21:26:33.461Z |
| _version_ |
1803594753335361536 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2074224966</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331132055.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2014 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-014-8847-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2074224966</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s00339-014-8847-8-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 9001.A</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hagen, C. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The future of focused electron beam-induced processing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag Berlin Heidelberg 2014</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Beam Lithography</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Precursor Molecule</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lithography Technique</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dissociative Electron Attachment</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Primary Electron Beam</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics. A, Materials science & processing</subfield><subfield code="d">Springer Berlin Heidelberg, 1981</subfield><subfield code="g">117(2014), 4 vom: 07. Nov., Seite 1599-1605</subfield><subfield code="w">(DE-627)129861340</subfield><subfield code="w">(DE-600)283365-7</subfield><subfield code="w">(DE-576)015171930</subfield><subfield code="x">0947-8396</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:117</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:4</subfield><subfield code="g">day:07</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:1599-1605</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s00339-014-8847-8</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">UA 9001.A</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">117</subfield><subfield code="j">2014</subfield><subfield code="e">4</subfield><subfield code="b">07</subfield><subfield code="c">11</subfield><subfield code="h">1599-1605</subfield></datafield></record></collection>
|
| score |
7.4028378 |