Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method
Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatm...
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| Autor*in: |
Chen, Ruqi [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. A, Materials science & processing - Springer Berlin Heidelberg, 1981, 120(2015), 1 vom: 28. Apr., Seite 379-384 |
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| Übergeordnetes Werk: |
volume:120 ; year:2015 ; number:1 ; day:28 ; month:04 ; pages:379-384 |
| Links: |
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| DOI / URN: |
10.1007/s00339-015-9199-8 |
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| Katalog-ID: |
OLC2074229348 |
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| 520 | |a Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. | ||
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10.1007/s00339-015-9199-8 doi (DE-627)OLC2074229348 (DE-He213)s00339-015-9199-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chen, Ruqi verfasserin aut Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. Resistive Switching High Resistance State Resistive Random Access Memory Schottky Emission Resistive Random Access Memory Device Hu, Wei aut Zou, Lilan aut Li, Baojun aut Bao, Dinghua aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 120(2015), 1 vom: 28. Apr., Seite 379-384 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:120 year:2015 number:1 day:28 month:04 pages:379-384 https://doi.org/10.1007/s00339-015-9199-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 120 2015 1 28 04 379-384 |
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10.1007/s00339-015-9199-8 doi (DE-627)OLC2074229348 (DE-He213)s00339-015-9199-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chen, Ruqi verfasserin aut Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. Resistive Switching High Resistance State Resistive Random Access Memory Schottky Emission Resistive Random Access Memory Device Hu, Wei aut Zou, Lilan aut Li, Baojun aut Bao, Dinghua aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 120(2015), 1 vom: 28. Apr., Seite 379-384 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:120 year:2015 number:1 day:28 month:04 pages:379-384 https://doi.org/10.1007/s00339-015-9199-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 120 2015 1 28 04 379-384 |
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10.1007/s00339-015-9199-8 doi (DE-627)OLC2074229348 (DE-He213)s00339-015-9199-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chen, Ruqi verfasserin aut Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. Resistive Switching High Resistance State Resistive Random Access Memory Schottky Emission Resistive Random Access Memory Device Hu, Wei aut Zou, Lilan aut Li, Baojun aut Bao, Dinghua aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 120(2015), 1 vom: 28. Apr., Seite 379-384 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:120 year:2015 number:1 day:28 month:04 pages:379-384 https://doi.org/10.1007/s00339-015-9199-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 120 2015 1 28 04 379-384 |
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10.1007/s00339-015-9199-8 doi (DE-627)OLC2074229348 (DE-He213)s00339-015-9199-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chen, Ruqi verfasserin aut Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. Resistive Switching High Resistance State Resistive Random Access Memory Schottky Emission Resistive Random Access Memory Device Hu, Wei aut Zou, Lilan aut Li, Baojun aut Bao, Dinghua aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 120(2015), 1 vom: 28. Apr., Seite 379-384 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:120 year:2015 number:1 day:28 month:04 pages:379-384 https://doi.org/10.1007/s00339-015-9199-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 120 2015 1 28 04 379-384 |
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10.1007/s00339-015-9199-8 doi (DE-627)OLC2074229348 (DE-He213)s00339-015-9199-8-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Chen, Ruqi verfasserin aut Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. Resistive Switching High Resistance State Resistive Random Access Memory Schottky Emission Resistive Random Access Memory Device Hu, Wei aut Zou, Lilan aut Li, Baojun aut Bao, Dinghua aut Enthalten in Applied physics. A, Materials science & processing Springer Berlin Heidelberg, 1981 120(2015), 1 vom: 28. Apr., Seite 379-384 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:120 year:2015 number:1 day:28 month:04 pages:379-384 https://doi.org/10.1007/s00339-015-9199-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 UA 9001.A AR 120 2015 1 28 04 379-384 |
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highly uniform resistive switching effect in amorphous $ bi_{2} $$ o_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method |
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Highly uniform resistive switching effect in amorphous $ Bi_{2} $$ O_{3} $ thin films fabricated by a low-temperature photochemical solution deposition method |
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Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. © Springer-Verlag Berlin Heidelberg 2015 |
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Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. © Springer-Verlag Berlin Heidelberg 2015 |
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Abstract Highly uniform resistive switching performance has been demonstrated in amorphous $ Bi_{2} $$ O_{3} $ thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/$ Bi_{2} $$ O_{3} $/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current–voltage characteristics. The excellent resistive switching performance of the amorphous $ Bi_{2} $$ O_{3} $ thin films can be attributed to the reduction of –OH groups and the formation of enhanced Bi–O bonding under UV irradiation treatment, based on X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous $ Bi_{2} $$ O_{3} $ thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices. © Springer-Verlag Berlin Heidelberg 2015 |
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