High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of...
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Autor*in:	Nikitichev, D. I. [verfasserIn] Ding, Y. Ruiz, M. Calligaro, M. Michel, N. Krakowski, M. Krestnikov, I. Livshits, D. Cataluna, M. A. Rafailov, E. U.

Format:	Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection

Systematik:	UA 9001

Anmerkung:	© Springer-Verlag 2010

Übergeordnetes Werk:	Enthalten in: Applied physics. B, Lasers and optics - Springer-Verlag, 1981, 103(2010), 3 vom: 30. Okt., Seite 609-613
Übergeordnetes Werk:	volume:103 ; year:2010 ; number:3 ; day:30 ; month:10 ; pages:609-613

Links:	Volltext

DOI / URN:	10.1007/s00340-010-4290-5

Katalog-ID:	OLC207430269X

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520			\|a Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.
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allfields	10.1007/s00340-010-4290-5 doi (DE-627)OLC207430269X (DE-He213)s00340-010-4290-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Nikitichev, D. I. verfasserin aut High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2010 Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection Ding, Y. aut Ruiz, M. aut Calligaro, M. aut Michel, N. aut Krakowski, M. aut Krestnikov, I. aut Livshits, D. aut Cataluna, M. A. aut Rafailov, E. U. aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 103(2010), 3 vom: 30. Okt., Seite 609-613 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:103 year:2010 number:3 day:30 month:10 pages:609-613 https://doi.org/10.1007/s00340-010-4290-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 103 2010 3 30 10 609-613
spelling	10.1007/s00340-010-4290-5 doi (DE-627)OLC207430269X (DE-He213)s00340-010-4290-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Nikitichev, D. I. verfasserin aut High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2010 Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection Ding, Y. aut Ruiz, M. aut Calligaro, M. aut Michel, N. aut Krakowski, M. aut Krestnikov, I. aut Livshits, D. aut Cataluna, M. A. aut Rafailov, E. U. aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 103(2010), 3 vom: 30. Okt., Seite 609-613 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:103 year:2010 number:3 day:30 month:10 pages:609-613 https://doi.org/10.1007/s00340-010-4290-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 103 2010 3 30 10 609-613
allfields_unstemmed	10.1007/s00340-010-4290-5 doi (DE-627)OLC207430269X (DE-He213)s00340-010-4290-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Nikitichev, D. I. verfasserin aut High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2010 Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection Ding, Y. aut Ruiz, M. aut Calligaro, M. aut Michel, N. aut Krakowski, M. aut Krestnikov, I. aut Livshits, D. aut Cataluna, M. A. aut Rafailov, E. U. aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 103(2010), 3 vom: 30. Okt., Seite 609-613 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:103 year:2010 number:3 day:30 month:10 pages:609-613 https://doi.org/10.1007/s00340-010-4290-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 103 2010 3 30 10 609-613
allfieldsGer	10.1007/s00340-010-4290-5 doi (DE-627)OLC207430269X (DE-He213)s00340-010-4290-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Nikitichev, D. I. verfasserin aut High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2010 Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection Ding, Y. aut Ruiz, M. aut Calligaro, M. aut Michel, N. aut Krakowski, M. aut Krestnikov, I. aut Livshits, D. aut Cataluna, M. A. aut Rafailov, E. U. aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 103(2010), 3 vom: 30. Okt., Seite 609-613 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:103 year:2010 number:3 day:30 month:10 pages:609-613 https://doi.org/10.1007/s00340-010-4290-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 103 2010 3 30 10 609-613
allfieldsSound	10.1007/s00340-010-4290-5 doi (DE-627)OLC207430269X (DE-He213)s00340-010-4290-5-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Nikitichev, D. I. verfasserin aut High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2010 Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection Ding, Y. aut Ruiz, M. aut Calligaro, M. aut Michel, N. aut Krakowski, M. aut Krestnikov, I. aut Livshits, D. aut Cataluna, M. A. aut Rafailov, E. U. aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 103(2010), 3 vom: 30. Okt., Seite 609-613 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:103 year:2010 number:3 day:30 month:10 pages:609-613 https://doi.org/10.1007/s00340-010-4290-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 103 2010 3 30 10 609-613
language	English
source	Enthalten in Applied physics. B, Lasers and optics 103(2010), 3 vom: 30. Okt., Seite 609-613 volume:103 year:2010 number:3 day:30 month:10 pages:609-613
sourceStr	Enthalten in Applied physics. B, Lasers and optics 103(2010), 3 vom: 30. Okt., Seite 609-613 volume:103 year:2010 number:3 day:30 month:10 pages:609-613
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection
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container_title	Applied physics. B, Lasers and optics
authorswithroles_txt_mv	Nikitichev, D. I. @@aut@@ Ding, Y. @@aut@@ Ruiz, M. @@aut@@ Calligaro, M. @@aut@@ Michel, N. @@aut@@ Krakowski, M. @@aut@@ Krestnikov, I. @@aut@@ Livshits, D. @@aut@@ Cataluna, M. A. @@aut@@ Rafailov, E. U. @@aut@@
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author	Nikitichev, D. I.
spellingShingle	Nikitichev, D. I. ddc 530 rvk UA 9001 misc Reverse Bias misc High Peak Power misc High Average Power misc Tapered Section misc Uniform Injection High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
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topic_title	530 620 VZ 530 VZ UA 9001 VZ rvk High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers Reverse Bias High Peak Power High Average Power Tapered Section Uniform Injection
topic	ddc 530 rvk UA 9001 misc Reverse Bias misc High Peak Power misc High Average Power misc Tapered Section misc Uniform Injection
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title	High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
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title_full	High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
author_sort	Nikitichev, D. I.
journal	Applied physics. B, Lasers and optics
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author_browse	Nikitichev, D. I. Ding, Y. Ruiz, M. Calligaro, M. Michel, N. Krakowski, M. Krestnikov, I. Livshits, D. Cataluna, M. A. Rafailov, E. U.
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title_sort	high-power passively mode-locked tapered inas/gaas quantum-dot lasers
title_auth	High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
abstract	Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. © Springer-Verlag 2010
abstractGer	Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. © Springer-Verlag 2010
abstract_unstemmed	Abstract We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. © Springer-Verlag 2010
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title_short	High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
url	https://doi.org/10.1007/s00340-010-4290-5
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author2	Ding, Y. Ruiz, M. Calligaro, M. Michel, N. Krakowski, M. Krestnikov, I. Livshits, D. Cataluna, M. A. Rafailov, E. U.
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up_date	2024-07-03T21:46:02.720Z
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