Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts
Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire s...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kim, Chang Oh [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
Transparent Conducting Oxide Film |
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| Systematik: |
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| Anmerkung: |
© Springer-Verlag 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics. B, Lasers and optics - Springer-Verlag, 1981, 109(2012), 2 vom: 14. Sept., Seite 283-287 |
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| Übergeordnetes Werk: |
volume:109 ; year:2012 ; number:2 ; day:14 ; month:09 ; pages:283-287 |
| Links: |
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| DOI / URN: |
10.1007/s00340-012-5129-z |
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| Katalog-ID: |
OLC2074309163 |
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| 520 | |a Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. | ||
| 650 | 4 | |a Transparent Conducting Oxide | |
| 650 | 4 | |a Yellow Emission | |
| 650 | 4 | |a Transparent Conducting Oxide Film | |
| 650 | 4 | |a Room Temperature Electroluminescence | |
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| 700 | 1 | |a Kim, Sung |4 aut | |
| 700 | 1 | |a Shin, Dong Hee |4 aut | |
| 700 | 1 | |a Shin, Dong Yeol |4 aut | |
| 700 | 1 | |a Choi, Suk-Ho |4 aut | |
| 700 | 1 | |a Hwang, Sung Won |4 aut | |
| 700 | 1 | |a Cha, Nam-Goo |4 aut | |
| 700 | 1 | |a Kang, Sammook |4 aut | |
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10.1007/s00340-012-5129-z doi (DE-627)OLC2074309163 (DE-He213)s00340-012-5129-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Kim, Chang Oh verfasserin aut Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. Transparent Conducting Oxide Yellow Emission Transparent Conducting Oxide Film Room Temperature Electroluminescence Transparent Contact Layer Kim, Sung aut Shin, Dong Hee aut Shin, Dong Yeol aut Choi, Suk-Ho aut Hwang, Sung Won aut Cha, Nam-Goo aut Kang, Sammook aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 109(2012), 2 vom: 14. Sept., Seite 283-287 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:109 year:2012 number:2 day:14 month:09 pages:283-287 https://doi.org/10.1007/s00340-012-5129-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 109 2012 2 14 09 283-287 |
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10.1007/s00340-012-5129-z doi (DE-627)OLC2074309163 (DE-He213)s00340-012-5129-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Kim, Chang Oh verfasserin aut Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. Transparent Conducting Oxide Yellow Emission Transparent Conducting Oxide Film Room Temperature Electroluminescence Transparent Contact Layer Kim, Sung aut Shin, Dong Hee aut Shin, Dong Yeol aut Choi, Suk-Ho aut Hwang, Sung Won aut Cha, Nam-Goo aut Kang, Sammook aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 109(2012), 2 vom: 14. Sept., Seite 283-287 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:109 year:2012 number:2 day:14 month:09 pages:283-287 https://doi.org/10.1007/s00340-012-5129-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 109 2012 2 14 09 283-287 |
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10.1007/s00340-012-5129-z doi (DE-627)OLC2074309163 (DE-He213)s00340-012-5129-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Kim, Chang Oh verfasserin aut Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. Transparent Conducting Oxide Yellow Emission Transparent Conducting Oxide Film Room Temperature Electroluminescence Transparent Contact Layer Kim, Sung aut Shin, Dong Hee aut Shin, Dong Yeol aut Choi, Suk-Ho aut Hwang, Sung Won aut Cha, Nam-Goo aut Kang, Sammook aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 109(2012), 2 vom: 14. Sept., Seite 283-287 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:109 year:2012 number:2 day:14 month:09 pages:283-287 https://doi.org/10.1007/s00340-012-5129-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 109 2012 2 14 09 283-287 |
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10.1007/s00340-012-5129-z doi (DE-627)OLC2074309163 (DE-He213)s00340-012-5129-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Kim, Chang Oh verfasserin aut Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. Transparent Conducting Oxide Yellow Emission Transparent Conducting Oxide Film Room Temperature Electroluminescence Transparent Contact Layer Kim, Sung aut Shin, Dong Hee aut Shin, Dong Yeol aut Choi, Suk-Ho aut Hwang, Sung Won aut Cha, Nam-Goo aut Kang, Sammook aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 109(2012), 2 vom: 14. Sept., Seite 283-287 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:109 year:2012 number:2 day:14 month:09 pages:283-287 https://doi.org/10.1007/s00340-012-5129-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 109 2012 2 14 09 283-287 |
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10.1007/s00340-012-5129-z doi (DE-627)OLC2074309163 (DE-He213)s00340-012-5129-z-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001 VZ rvk Kim, Chang Oh verfasserin aut Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 2012 Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. Transparent Conducting Oxide Yellow Emission Transparent Conducting Oxide Film Room Temperature Electroluminescence Transparent Contact Layer Kim, Sung aut Shin, Dong Hee aut Shin, Dong Yeol aut Choi, Suk-Ho aut Hwang, Sung Won aut Cha, Nam-Goo aut Kang, Sammook aut Enthalten in Applied physics. B, Lasers and optics Springer-Verlag, 1981 109(2012), 2 vom: 14. Sept., Seite 283-287 (DE-627)130297682 (DE-600)579693-3 (DE-576)015877272 0946-2171 nnns volume:109 year:2012 number:2 day:14 month:09 pages:283-287 https://doi.org/10.1007/s00340-012-5129-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_30 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2018 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4323 UA 9001 AR 109 2012 2 14 09 283-287 |
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Enthalten in Applied physics. B, Lasers and optics 109(2012), 2 vom: 14. Sept., Seite 283-287 volume:109 year:2012 number:2 day:14 month:09 pages:283-287 |
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Kim, Chang Oh @@aut@@ Kim, Sung @@aut@@ Shin, Dong Hee @@aut@@ Shin, Dong Yeol @@aut@@ Choi, Suk-Ho @@aut@@ Hwang, Sung Won @@aut@@ Cha, Nam-Goo @@aut@@ Kang, Sammook @@aut@@ |
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Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts |
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Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts |
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Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. © Springer-Verlag 2012 |
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Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. © Springer-Verlag 2012 |
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Abstract P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n epilayers with a total thickness of ~6 μm were grown on c-plane (0001) sapphire substrates by metal–organic chemical vapor deposition. Half region of the p-GaN layer was etched until the n-GaN layer was exposed, and 100-nm-thick GZO contacts were deposited on the p- and n-GaN layers by RF sputtering with varying Ga concentration (nG) from 1 to 5 mol%. Based on the results of Hall effect, photoluminescence (PL), and X-ray diffraction (XRD), the GZO films were expected to act as best electrical contacts for the LEDs at nG = 2 mol%. Under forward-bias conditions, the I–V curves showed diode characteristics except nG = 5 mol%, and the leakage current was minimized at nG = 2 mol%. Two dominant EL peaks of ultraviolet and yellow emissions were observed at ~376 and ~560 nm, and attributed to near-band-edge- and defect-related radiative transitions, respectively. At nG = 2 mol%, the UV EL showed markedly large intensities for all injection currents, consistent with the results of Hall effect, PL, I–V, and XRD. © Springer-Verlag 2012 |
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