Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing
Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage a...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Semenov, Oleg [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2003 |
|---|
| Anmerkung: |
© Kluwer Academic Publishers 2003 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic testing - Kluwer Academic Publishers, 1990, 19(2003), 3 vom: Juni, Seite 341-352 |
|---|---|
| Übergeordnetes Werk: |
volume:19 ; year:2003 ; number:3 ; month:06 ; pages:341-352 |
| Links: |
|---|
| DOI / URN: |
10.1023/A:1023713517064 |
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OLC2075585210 |
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| 520 | |a Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. | ||
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10.1023/A:1023713517064 doi (DE-627)OLC2075585210 (DE-He213)A:1023713517064-p DE-627 ger DE-627 rakwb eng 004 670 VZ Semenov, Oleg verfasserin aut Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2003 Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. Vassighi, Arman aut Sachdev, Manoj aut Enthalten in Journal of electronic testing Kluwer Academic Publishers, 1990 19(2003), 3 vom: Juni, Seite 341-352 (DE-627)130869090 (DE-600)1033317-4 (DE-576)024991600 0923-8174 nnns volume:19 year:2003 number:3 month:06 pages:341-352 https://doi.org/10.1023/A:1023713517064 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_285 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2244 GBV_ILN_4314 GBV_ILN_4318 AR 19 2003 3 06 341-352 |
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10.1023/A:1023713517064 doi (DE-627)OLC2075585210 (DE-He213)A:1023713517064-p DE-627 ger DE-627 rakwb eng 004 670 VZ Semenov, Oleg verfasserin aut Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2003 Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. Vassighi, Arman aut Sachdev, Manoj aut Enthalten in Journal of electronic testing Kluwer Academic Publishers, 1990 19(2003), 3 vom: Juni, Seite 341-352 (DE-627)130869090 (DE-600)1033317-4 (DE-576)024991600 0923-8174 nnns volume:19 year:2003 number:3 month:06 pages:341-352 https://doi.org/10.1023/A:1023713517064 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_285 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2244 GBV_ILN_4314 GBV_ILN_4318 AR 19 2003 3 06 341-352 |
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10.1023/A:1023713517064 doi (DE-627)OLC2075585210 (DE-He213)A:1023713517064-p DE-627 ger DE-627 rakwb eng 004 670 VZ Semenov, Oleg verfasserin aut Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2003 Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. Vassighi, Arman aut Sachdev, Manoj aut Enthalten in Journal of electronic testing Kluwer Academic Publishers, 1990 19(2003), 3 vom: Juni, Seite 341-352 (DE-627)130869090 (DE-600)1033317-4 (DE-576)024991600 0923-8174 nnns volume:19 year:2003 number:3 month:06 pages:341-352 https://doi.org/10.1023/A:1023713517064 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_285 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2244 GBV_ILN_4314 GBV_ILN_4318 AR 19 2003 3 06 341-352 |
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10.1023/A:1023713517064 doi (DE-627)OLC2075585210 (DE-He213)A:1023713517064-p DE-627 ger DE-627 rakwb eng 004 670 VZ Semenov, Oleg verfasserin aut Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2003 Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. Vassighi, Arman aut Sachdev, Manoj aut Enthalten in Journal of electronic testing Kluwer Academic Publishers, 1990 19(2003), 3 vom: Juni, Seite 341-352 (DE-627)130869090 (DE-600)1033317-4 (DE-576)024991600 0923-8174 nnns volume:19 year:2003 number:3 month:06 pages:341-352 https://doi.org/10.1023/A:1023713517064 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_285 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2244 GBV_ILN_4314 GBV_ILN_4318 AR 19 2003 3 06 341-352 |
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Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. © Kluwer Academic Publishers 2003 |
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Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. © Kluwer Academic Publishers 2003 |
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Abstract The effectiveness of single threshold IDDQ measurement for defect detection is eroded owing to higher and more variable background leakage current in modern VLSIs. Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. Intrinsic leakage current components of transistor are analyzed and the impact of technology scaling on effectiveness of stressed ΔIDDQ testing is also investigated. © Kluwer Academic Publishers 2003 |
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Delta IDDQ is identified as one alternative for deep submicron current measurements. Often delta IDDQ is coupled with voltage and thermal stress in order to accelerate the failure mechanisms. A major concern is the IDDQ limit setting under normal and stressed conditions. In this article, we investigate the impact of voltage and thermal stress on the background leakage. We calculate IDDQ limits for normal and stressed operating conditions of 0.18 μm n-MOSFETs using a device simulator. 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