An Efficient Metric-Guided Gate Sizing Methodology for Guardband Reduction Under Process Variations and Aging Effects

Abstract Circuit reliability due to Bias Temperature Instability, BTI, has become an important concern in scaled-down complex electronic systems. Even more, current silicon technologies are severely affected by the combined impact of BTI-induced device’s aging and Process-induced device’s parameters...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Gomez, Andres [verfasserIn]

Champac, Victor

Format:

Artikel

Sprache:

Englisch

Erschienen:

2019

Schlagwörter:

Aging of circuits and systems

Statistical timing analysis

Design optimization

Gate sizing metrics

Anmerkung:

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Übergeordnetes Werk:

Enthalten in: Journal of electronic testing - Springer US, 1990, 35(2019), 1 vom: 22. Jan., Seite 87-100

Übergeordnetes Werk:

volume:35 ; year:2019 ; number:1 ; day:22 ; month:01 ; pages:87-100

Links:

Volltext

DOI / URN:

10.1007/s10836-019-05772-5

Katalog-ID:

OLC2075595100

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