Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell
Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Krishna Murthy, G S R [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1979 |
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| Schlagwörter: |
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| Anmerkung: |
© the Indian Academy of Sciences 1977 |
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| Übergeordnetes Werk: |
Enthalten in: Pramāna - Springer India, 1973, 13(1979), 1 vom: Juli, Seite 39-45 |
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| Übergeordnetes Werk: |
volume:13 ; year:1979 ; number:1 ; month:07 ; pages:39-45 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02846126 |
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| Katalog-ID: |
OLC2076006370 |
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10.1007/BF02846126 doi (DE-627)OLC2076006370 (DE-He213)BF02846126-p DE-627 ger DE-627 rakwb eng 530 VZ Krishna Murthy, G S R verfasserin aut Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1977 Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. Schottky diode silicon solar cell Sinha, A P B aut Enthalten in Pramāna Springer India, 1973 13(1979), 1 vom: Juli, Seite 39-45 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:13 year:1979 number:1 month:07 pages:39-45 https://doi.org/10.1007/BF02846126 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_24 GBV_ILN_40 GBV_ILN_70 GBV_ILN_179 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_4309 AR 13 1979 1 07 39-45 |
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10.1007/BF02846126 doi (DE-627)OLC2076006370 (DE-He213)BF02846126-p DE-627 ger DE-627 rakwb eng 530 VZ Krishna Murthy, G S R verfasserin aut Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1977 Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. Schottky diode silicon solar cell Sinha, A P B aut Enthalten in Pramāna Springer India, 1973 13(1979), 1 vom: Juli, Seite 39-45 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:13 year:1979 number:1 month:07 pages:39-45 https://doi.org/10.1007/BF02846126 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_24 GBV_ILN_40 GBV_ILN_70 GBV_ILN_179 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_4309 AR 13 1979 1 07 39-45 |
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10.1007/BF02846126 doi (DE-627)OLC2076006370 (DE-He213)BF02846126-p DE-627 ger DE-627 rakwb eng 530 VZ Krishna Murthy, G S R verfasserin aut Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1977 Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. Schottky diode silicon solar cell Sinha, A P B aut Enthalten in Pramāna Springer India, 1973 13(1979), 1 vom: Juli, Seite 39-45 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:13 year:1979 number:1 month:07 pages:39-45 https://doi.org/10.1007/BF02846126 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_24 GBV_ILN_40 GBV_ILN_70 GBV_ILN_179 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_4309 AR 13 1979 1 07 39-45 |
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10.1007/BF02846126 doi (DE-627)OLC2076006370 (DE-He213)BF02846126-p DE-627 ger DE-627 rakwb eng 530 VZ Krishna Murthy, G S R verfasserin aut Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1977 Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. Schottky diode silicon solar cell Sinha, A P B aut Enthalten in Pramāna Springer India, 1973 13(1979), 1 vom: Juli, Seite 39-45 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:13 year:1979 number:1 month:07 pages:39-45 https://doi.org/10.1007/BF02846126 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_24 GBV_ILN_40 GBV_ILN_70 GBV_ILN_179 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_4309 AR 13 1979 1 07 39-45 |
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10.1007/BF02846126 doi (DE-627)OLC2076006370 (DE-He213)BF02846126-p DE-627 ger DE-627 rakwb eng 530 VZ Krishna Murthy, G S R verfasserin aut Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1977 Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. Schottky diode silicon solar cell Sinha, A P B aut Enthalten in Pramāna Springer India, 1973 13(1979), 1 vom: Juli, Seite 39-45 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:13 year:1979 number:1 month:07 pages:39-45 https://doi.org/10.1007/BF02846126 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_24 GBV_ILN_40 GBV_ILN_70 GBV_ILN_179 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_4309 AR 13 1979 1 07 39-45 |
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Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. © the Indian Academy of Sciences 1977 |
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Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained. © the Indian Academy of Sciences 1977 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2076006370</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402042307.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1979 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02846126</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2076006370</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02846126-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Krishna Murthy, G S R</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1979</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© the Indian Academy of Sciences 1977</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li’s work on GaAs. 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The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Schottky diode</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">solar cell</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sinha, A P B</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Pramāna</subfield><subfield code="d">Springer India, 1973</subfield><subfield code="g">13(1979), 1 vom: Juli, Seite 39-45</subfield><subfield code="w">(DE-627)129403342</subfield><subfield code="w">(DE-600)186949-8</subfield><subfield code="w">(DE-576)014785102</subfield><subfield code="x">0304-4289</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:1979</subfield><subfield code="g">number:1</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:39-45</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02846126</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_179</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">1979</subfield><subfield code="e">1</subfield><subfield code="c">07</subfield><subfield code="h">39-45</subfield></datafield></record></collection>
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