Resonance-like tunneling across a barrier with adjacent wells
Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with sui...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mahadevan, S [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Academy of Sciences 2006 |
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| Übergeordnetes Werk: |
Enthalten in: Pramāna - Springer India, 1973, 67(2006), 3 vom: Sept., Seite 401-413 |
|---|---|
| Übergeordnetes Werk: |
volume:67 ; year:2006 ; number:3 ; month:09 ; pages:401-413 |
| Links: |
|---|
| DOI / URN: |
10.1007/s12043-006-0001-5 |
|---|
| Katalog-ID: |
OLC2076047581 |
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| 520 | |a Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. | ||
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10.1007/s12043-006-0001-5 doi (DE-627)OLC2076047581 (DE-He213)s12043-006-0001-5-p DE-627 ger DE-627 rakwb eng 530 VZ Mahadevan, S verfasserin aut Resonance-like tunneling across a barrier with adjacent wells 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Potential barrier with wells tunneling resonance Prema, P aut Agarwalla, S K aut Sahu, B aut Shastry, C S aut Enthalten in Pramāna Springer India, 1973 67(2006), 3 vom: Sept., Seite 401-413 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:67 year:2006 number:3 month:09 pages:401-413 https://doi.org/10.1007/s12043-006-0001-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_4012 AR 67 2006 3 09 401-413 |
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10.1007/s12043-006-0001-5 doi (DE-627)OLC2076047581 (DE-He213)s12043-006-0001-5-p DE-627 ger DE-627 rakwb eng 530 VZ Mahadevan, S verfasserin aut Resonance-like tunneling across a barrier with adjacent wells 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Potential barrier with wells tunneling resonance Prema, P aut Agarwalla, S K aut Sahu, B aut Shastry, C S aut Enthalten in Pramāna Springer India, 1973 67(2006), 3 vom: Sept., Seite 401-413 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:67 year:2006 number:3 month:09 pages:401-413 https://doi.org/10.1007/s12043-006-0001-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_4012 AR 67 2006 3 09 401-413 |
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10.1007/s12043-006-0001-5 doi (DE-627)OLC2076047581 (DE-He213)s12043-006-0001-5-p DE-627 ger DE-627 rakwb eng 530 VZ Mahadevan, S verfasserin aut Resonance-like tunneling across a barrier with adjacent wells 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Potential barrier with wells tunneling resonance Prema, P aut Agarwalla, S K aut Sahu, B aut Shastry, C S aut Enthalten in Pramāna Springer India, 1973 67(2006), 3 vom: Sept., Seite 401-413 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:67 year:2006 number:3 month:09 pages:401-413 https://doi.org/10.1007/s12043-006-0001-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_4012 AR 67 2006 3 09 401-413 |
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10.1007/s12043-006-0001-5 doi (DE-627)OLC2076047581 (DE-He213)s12043-006-0001-5-p DE-627 ger DE-627 rakwb eng 530 VZ Mahadevan, S verfasserin aut Resonance-like tunneling across a barrier with adjacent wells 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Potential barrier with wells tunneling resonance Prema, P aut Agarwalla, S K aut Sahu, B aut Shastry, C S aut Enthalten in Pramāna Springer India, 1973 67(2006), 3 vom: Sept., Seite 401-413 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:67 year:2006 number:3 month:09 pages:401-413 https://doi.org/10.1007/s12043-006-0001-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_4012 AR 67 2006 3 09 401-413 |
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10.1007/s12043-006-0001-5 doi (DE-627)OLC2076047581 (DE-He213)s12043-006-0001-5-p DE-627 ger DE-627 rakwb eng 530 VZ Mahadevan, S verfasserin aut Resonance-like tunneling across a barrier with adjacent wells 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Potential barrier with wells tunneling resonance Prema, P aut Agarwalla, S K aut Sahu, B aut Shastry, C S aut Enthalten in Pramāna Springer India, 1973 67(2006), 3 vom: Sept., Seite 401-413 (DE-627)129403342 (DE-600)186949-8 (DE-576)014785102 0304-4289 nnns volume:67 year:2006 number:3 month:09 pages:401-413 https://doi.org/10.1007/s12043-006-0001-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_4012 AR 67 2006 3 09 401-413 |
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Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. © Indian Academy of Sciences 2006 |
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Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. © Indian Academy of Sciences 2006 |
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Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. © Indian Academy of Sciences 2006 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2076047581</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402042725.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2006 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12043-006-0001-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2076047581</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s12043-006-0001-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahadevan, S</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Resonance-like tunneling across a barrier with adjacent wells</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2006</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Academy of Sciences 2006</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. 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