X-ray preionised excimer laser and its applications
Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography.
Gespeichert in:
| Autor*in: |
Qihong, Lou [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1987 |
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| Schlagwörter: |
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| Anmerkung: |
© J.C. Baltzer A.G. Scientific Publishing Company 1987 |
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| Übergeordnetes Werk: |
Enthalten in: Hyperfine interactions - Kluwer Academic Publishers, 1975, 37(1987), 1-4 vom: Dez., Seite 275-290 |
|---|---|
| Übergeordnetes Werk: |
volume:37 ; year:1987 ; number:1-4 ; month:12 ; pages:275-290 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02395714 |
|---|
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OLC2076351051 |
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| 520 | |a Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. | ||
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10.1007/BF02395714 doi (DE-627)OLC2076351051 (DE-He213)BF02395714-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Qihong, Lou verfasserin aut X-ray preionised excimer laser and its applications 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © J.C. Baltzer A.G. Scientific Publishing Company 1987 Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. Thin Film Maximum Output Excimer Laser Laser Semiconductor Semiconductor Processing Enthalten in Hyperfine interactions Kluwer Academic Publishers, 1975 37(1987), 1-4 vom: Dez., Seite 275-290 (DE-627)129438685 (DE-600)194471-X (DE-576)014809028 0304-3843 nnns volume:37 year:1987 number:1-4 month:12 pages:275-290 https://doi.org/10.1007/BF02395714 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4323 33.00 VZ AR 37 1987 1-4 12 275-290 |
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10.1007/BF02395714 doi (DE-627)OLC2076351051 (DE-He213)BF02395714-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Qihong, Lou verfasserin aut X-ray preionised excimer laser and its applications 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © J.C. Baltzer A.G. Scientific Publishing Company 1987 Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. Thin Film Maximum Output Excimer Laser Laser Semiconductor Semiconductor Processing Enthalten in Hyperfine interactions Kluwer Academic Publishers, 1975 37(1987), 1-4 vom: Dez., Seite 275-290 (DE-627)129438685 (DE-600)194471-X (DE-576)014809028 0304-3843 nnns volume:37 year:1987 number:1-4 month:12 pages:275-290 https://doi.org/10.1007/BF02395714 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4323 33.00 VZ AR 37 1987 1-4 12 275-290 |
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10.1007/BF02395714 doi (DE-627)OLC2076351051 (DE-He213)BF02395714-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Qihong, Lou verfasserin aut X-ray preionised excimer laser and its applications 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © J.C. Baltzer A.G. Scientific Publishing Company 1987 Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. Thin Film Maximum Output Excimer Laser Laser Semiconductor Semiconductor Processing Enthalten in Hyperfine interactions Kluwer Academic Publishers, 1975 37(1987), 1-4 vom: Dez., Seite 275-290 (DE-627)129438685 (DE-600)194471-X (DE-576)014809028 0304-3843 nnns volume:37 year:1987 number:1-4 month:12 pages:275-290 https://doi.org/10.1007/BF02395714 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4323 33.00 VZ AR 37 1987 1-4 12 275-290 |
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10.1007/BF02395714 doi (DE-627)OLC2076351051 (DE-He213)BF02395714-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Qihong, Lou verfasserin aut X-ray preionised excimer laser and its applications 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © J.C. Baltzer A.G. Scientific Publishing Company 1987 Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. Thin Film Maximum Output Excimer Laser Laser Semiconductor Semiconductor Processing Enthalten in Hyperfine interactions Kluwer Academic Publishers, 1975 37(1987), 1-4 vom: Dez., Seite 275-290 (DE-627)129438685 (DE-600)194471-X (DE-576)014809028 0304-3843 nnns volume:37 year:1987 number:1-4 month:12 pages:275-290 https://doi.org/10.1007/BF02395714 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4323 33.00 VZ AR 37 1987 1-4 12 275-290 |
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10.1007/BF02395714 doi (DE-627)OLC2076351051 (DE-He213)BF02395714-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Qihong, Lou verfasserin aut X-ray preionised excimer laser and its applications 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © J.C. Baltzer A.G. Scientific Publishing Company 1987 Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. Thin Film Maximum Output Excimer Laser Laser Semiconductor Semiconductor Processing Enthalten in Hyperfine interactions Kluwer Academic Publishers, 1975 37(1987), 1-4 vom: Dez., Seite 275-290 (DE-627)129438685 (DE-600)194471-X (DE-576)014809028 0304-3843 nnns volume:37 year:1987 number:1-4 month:12 pages:275-290 https://doi.org/10.1007/BF02395714 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4323 33.00 VZ AR 37 1987 1-4 12 275-290 |
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Abstract Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography. © J.C. Baltzer A.G. Scientific Publishing Company 1987 |
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