± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower
Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two bia...
Ausführliche Beschreibung
Autor*in: |
Yesil, Abdullah [verfasserIn] |
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2021 |
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Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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Übergeordnetes Werk: |
Enthalten in: Circuits, systems and signal processing - Springer US, 1982, 41(2021), 4 vom: 23. Okt., Seite 1819-1833 |
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Übergeordnetes Werk: |
volume:41 ; year:2021 ; number:4 ; day:23 ; month:10 ; pages:1819-1833 |
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DOI / URN: |
10.1007/s00034-021-01867-7 |
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OLC2078154695 |
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520 | |a Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. | ||
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10.1007/s00034-021-01867-7 doi (DE-627)OLC2078154695 (DE-He213)s00034-021-01867-7-p DE-627 ger DE-627 rakwb eng 600 VZ Yesil, Abdullah verfasserin (orcid)0000-0002-0607-8226 aut ± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. VCII Voltage conveyor Super source follower Low voltage Low power CMOS analog integrated circuits Minaei, Shahram aut Psychalinos, Costas aut Enthalten in Circuits, systems and signal processing Springer US, 1982 41(2021), 4 vom: 23. Okt., Seite 1819-1833 (DE-627)130312134 (DE-600)588684-3 (DE-576)015889939 0278-081X nnns volume:41 year:2021 number:4 day:23 month:10 pages:1819-1833 https://doi.org/10.1007/s00034-021-01867-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2244 AR 41 2021 4 23 10 1819-1833 |
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10.1007/s00034-021-01867-7 doi (DE-627)OLC2078154695 (DE-He213)s00034-021-01867-7-p DE-627 ger DE-627 rakwb eng 600 VZ Yesil, Abdullah verfasserin (orcid)0000-0002-0607-8226 aut ± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. VCII Voltage conveyor Super source follower Low voltage Low power CMOS analog integrated circuits Minaei, Shahram aut Psychalinos, Costas aut Enthalten in Circuits, systems and signal processing Springer US, 1982 41(2021), 4 vom: 23. Okt., Seite 1819-1833 (DE-627)130312134 (DE-600)588684-3 (DE-576)015889939 0278-081X nnns volume:41 year:2021 number:4 day:23 month:10 pages:1819-1833 https://doi.org/10.1007/s00034-021-01867-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2244 AR 41 2021 4 23 10 1819-1833 |
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10.1007/s00034-021-01867-7 doi (DE-627)OLC2078154695 (DE-He213)s00034-021-01867-7-p DE-627 ger DE-627 rakwb eng 600 VZ Yesil, Abdullah verfasserin (orcid)0000-0002-0607-8226 aut ± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. VCII Voltage conveyor Super source follower Low voltage Low power CMOS analog integrated circuits Minaei, Shahram aut Psychalinos, Costas aut Enthalten in Circuits, systems and signal processing Springer US, 1982 41(2021), 4 vom: 23. Okt., Seite 1819-1833 (DE-627)130312134 (DE-600)588684-3 (DE-576)015889939 0278-081X nnns volume:41 year:2021 number:4 day:23 month:10 pages:1819-1833 https://doi.org/10.1007/s00034-021-01867-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2244 AR 41 2021 4 23 10 1819-1833 |
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10.1007/s00034-021-01867-7 doi (DE-627)OLC2078154695 (DE-He213)s00034-021-01867-7-p DE-627 ger DE-627 rakwb eng 600 VZ Yesil, Abdullah verfasserin (orcid)0000-0002-0607-8226 aut ± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. VCII Voltage conveyor Super source follower Low voltage Low power CMOS analog integrated circuits Minaei, Shahram aut Psychalinos, Costas aut Enthalten in Circuits, systems and signal processing Springer US, 1982 41(2021), 4 vom: 23. Okt., Seite 1819-1833 (DE-627)130312134 (DE-600)588684-3 (DE-576)015889939 0278-081X nnns volume:41 year:2021 number:4 day:23 month:10 pages:1819-1833 https://doi.org/10.1007/s00034-021-01867-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2244 AR 41 2021 4 23 10 1819-1833 |
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10.1007/s00034-021-01867-7 doi (DE-627)OLC2078154695 (DE-He213)s00034-021-01867-7-p DE-627 ger DE-627 rakwb eng 600 VZ Yesil, Abdullah verfasserin (orcid)0000-0002-0607-8226 aut ± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. VCII Voltage conveyor Super source follower Low voltage Low power CMOS analog integrated circuits Minaei, Shahram aut Psychalinos, Costas aut Enthalten in Circuits, systems and signal processing Springer US, 1982 41(2021), 4 vom: 23. Okt., Seite 1819-1833 (DE-627)130312134 (DE-600)588684-3 (DE-576)015889939 0278-081X nnns volume:41 year:2021 number:4 day:23 month:10 pages:1819-1833 https://doi.org/10.1007/s00034-021-01867-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2244 AR 41 2021 4 23 10 1819-1833 |
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Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
abstractGer |
Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
abstract_unstemmed |
Abstract A simple ultra-low-voltage realization of second-generation voltage conveyor (VCII) based on the employment of super source follower, as voltage follower, and of current follower is presented in this paper. Full CMOS realization of the proposed VCII contains only ten transistors and two biasing voltages except for DC power supply voltages. Thanks to the super source follower structure, the parasitic resistance of the Z terminal is very low. As for parasitic resistance seen at the Y terminal, it can be reduced with the help of biasing voltage of current follower. Furthermore, its value can be tuned through the biasing voltage for different application circuits. Hence, this structure can be used as voltage-controlled second-generation voltage conveyor (VC-VCII). Post-layout simulation results, based on TSMC 0.18 μm CMOS process parameters, are provided. The main attractive features of the proposed VCII can be described as follows: operation under ± 0.45 V power supply voltages, consisting of only ten transistors, free from the body effect, capability of operating in a low-voltage environment, and parasitic resistance value at Z terminal equal to few Ohms. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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title_short |
± 0.45 V CMOS Second-Generation Voltage Conveyor Based on Super Source Follower |
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https://doi.org/10.1007/s00034-021-01867-7 |
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Minaei, Shahram Psychalinos, Costas |
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