On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering
Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported s...
Ausführliche Beschreibung
Autor*in: |
Vasin, A. V. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
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2022 |
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Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 33(2022), 9 vom: 08. Feb., Seite 6421-6431 |
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Übergeordnetes Werk: |
volume:33 ; year:2022 ; number:9 ; day:08 ; month:02 ; pages:6421-6431 |
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DOI / URN: |
10.1007/s10854-022-07814-9 |
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Katalog-ID: |
OLC2078183032 |
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520 | |a Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. | ||
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10.1007/s10854-022-07814-9 doi (DE-627)OLC2078183032 (DE-He213)s10854-022-07814-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vasin, A. V. verfasserin (orcid)0000-0003-2771-0670 aut On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. Rusavsky, A. V. aut Mamykin, S. V. aut Nikolenko, A. S. aut Strelchuk, V. V. aut Yatskiv, R. aut Grym, J. aut Gudimenko, A. I. aut Kladko, V. P. aut Tyagulskyy, I. P. aut Lorinčik, J. aut Elantyev, I. aut Nazarov, A. N. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 33(2022), 9 vom: 08. Feb., Seite 6421-6431 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:33 year:2022 number:9 day:08 month:02 pages:6421-6431 https://doi.org/10.1007/s10854-022-07814-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 33 2022 9 08 02 6421-6431 |
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10.1007/s10854-022-07814-9 doi (DE-627)OLC2078183032 (DE-He213)s10854-022-07814-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vasin, A. V. verfasserin (orcid)0000-0003-2771-0670 aut On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. Rusavsky, A. V. aut Mamykin, S. V. aut Nikolenko, A. S. aut Strelchuk, V. V. aut Yatskiv, R. aut Grym, J. aut Gudimenko, A. I. aut Kladko, V. P. aut Tyagulskyy, I. P. aut Lorinčik, J. aut Elantyev, I. aut Nazarov, A. N. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 33(2022), 9 vom: 08. Feb., Seite 6421-6431 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:33 year:2022 number:9 day:08 month:02 pages:6421-6431 https://doi.org/10.1007/s10854-022-07814-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 33 2022 9 08 02 6421-6431 |
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10.1007/s10854-022-07814-9 doi (DE-627)OLC2078183032 (DE-He213)s10854-022-07814-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vasin, A. V. verfasserin (orcid)0000-0003-2771-0670 aut On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. Rusavsky, A. V. aut Mamykin, S. V. aut Nikolenko, A. S. aut Strelchuk, V. V. aut Yatskiv, R. aut Grym, J. aut Gudimenko, A. I. aut Kladko, V. P. aut Tyagulskyy, I. P. aut Lorinčik, J. aut Elantyev, I. aut Nazarov, A. N. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 33(2022), 9 vom: 08. Feb., Seite 6421-6431 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:33 year:2022 number:9 day:08 month:02 pages:6421-6431 https://doi.org/10.1007/s10854-022-07814-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 33 2022 9 08 02 6421-6431 |
allfieldsGer |
10.1007/s10854-022-07814-9 doi (DE-627)OLC2078183032 (DE-He213)s10854-022-07814-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vasin, A. V. verfasserin (orcid)0000-0003-2771-0670 aut On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. Rusavsky, A. V. aut Mamykin, S. V. aut Nikolenko, A. S. aut Strelchuk, V. V. aut Yatskiv, R. aut Grym, J. aut Gudimenko, A. I. aut Kladko, V. P. aut Tyagulskyy, I. P. aut Lorinčik, J. aut Elantyev, I. aut Nazarov, A. N. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 33(2022), 9 vom: 08. Feb., Seite 6421-6431 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:33 year:2022 number:9 day:08 month:02 pages:6421-6431 https://doi.org/10.1007/s10854-022-07814-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 33 2022 9 08 02 6421-6431 |
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10.1007/s10854-022-07814-9 doi (DE-627)OLC2078183032 (DE-He213)s10854-022-07814-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vasin, A. V. verfasserin (orcid)0000-0003-2771-0670 aut On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. Rusavsky, A. V. aut Mamykin, S. V. aut Nikolenko, A. S. aut Strelchuk, V. V. aut Yatskiv, R. aut Grym, J. aut Gudimenko, A. I. aut Kladko, V. P. aut Tyagulskyy, I. P. aut Lorinčik, J. aut Elantyev, I. aut Nazarov, A. N. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 33(2022), 9 vom: 08. Feb., Seite 6421-6431 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:33 year:2022 number:9 day:08 month:02 pages:6421-6431 https://doi.org/10.1007/s10854-022-07814-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 33 2022 9 08 02 6421-6431 |
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Vasin, A. V. Rusavsky, A. V. Mamykin, S. V. Nikolenko, A. S. Strelchuk, V. V. Yatskiv, R. Grym, J. Gudimenko, A. I. Kladko, V. P. Tyagulskyy, I. P. Lorinčik, J. Elantyev, I. Nazarov, A. N. |
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On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering |
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Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 |
abstractGer |
Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 |
abstract_unstemmed |
Abstract A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 |
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On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering |
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