Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growt...
Ausführliche Beschreibung
Autor*in: |
Nishihara, Tappei [verfasserIn] |
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Artikel |
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Sprache: |
Englisch |
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2021 |
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Anmerkung: |
© The Minerals, Metals & Materials Society 2021 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 50(2021), 3 vom: 09. Jan., Seite 1474-1481 |
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Übergeordnetes Werk: |
volume:50 ; year:2021 ; number:3 ; day:09 ; month:01 ; pages:1474-1481 |
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DOI / URN: |
10.1007/s11664-020-08702-w |
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OLC2078185922 |
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10.1007/s11664-020-08702-w doi (DE-627)OLC2078185922 (DE-He213)s11664-020-08702-w-p DE-627 ger DE-627 rakwb eng 670 VZ Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon TEM oxygen precipitation solar cell crystal growth Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Springer US, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)OLC2078185922 (DE-He213)s11664-020-08702-w-p DE-627 ger DE-627 rakwb eng 670 VZ Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon TEM oxygen precipitation solar cell crystal growth Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Springer US, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)OLC2078185922 (DE-He213)s11664-020-08702-w-p DE-627 ger DE-627 rakwb eng 670 VZ Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon TEM oxygen precipitation solar cell crystal growth Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Springer US, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)OLC2078185922 (DE-He213)s11664-020-08702-w-p DE-627 ger DE-627 rakwb eng 670 VZ Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon TEM oxygen precipitation solar cell crystal growth Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Springer US, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 50 2021 3 09 01 1474-1481 |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
abstract |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
abstractGer |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
abstract_unstemmed |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
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