Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric
Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport me...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Perevalov, T. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2022 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 51(2022), 5 vom: 06. März, Seite 2521-2527 |
|---|---|
| Übergeordnetes Werk: |
volume:51 ; year:2022 ; number:5 ; day:06 ; month:03 ; pages:2521-2527 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-021-09411-8 |
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| Katalog-ID: |
OLC2078387479 |
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| 520 | |a Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. | ||
| 650 | 4 | |a Low- | |
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| 700 | 1 | |a Gismatulin, A. A. |4 aut | |
| 700 | 1 | |a Gritsenko, V. A. |4 aut | |
| 700 | 1 | |a Xu, H. |4 aut | |
| 700 | 1 | |a Zhang, J. |4 aut | |
| 700 | 1 | |a Vorotilov, K. A. |4 aut | |
| 700 | 1 | |a Baklanov, M. R. |4 aut | |
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10.1007/s11664-021-09411-8 doi (DE-627)OLC2078387479 (DE-He213)s11664-021-09411-8-p DE-627 ger DE-627 rakwb eng 670 VZ Perevalov, T. V. verfasserin (orcid)0000-0003-0895-6202 aut Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. Low- dielectric charge transport trap energy photoluminescence Gismatulin, A. A. aut Gritsenko, V. A. aut Xu, H. aut Zhang, J. aut Vorotilov, K. A. aut Baklanov, M. R. aut Enthalten in Journal of electronic materials Springer US, 1972 51(2022), 5 vom: 06. März, Seite 2521-2527 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:51 year:2022 number:5 day:06 month:03 pages:2521-2527 https://doi.org/10.1007/s11664-021-09411-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 51 2022 5 06 03 2521-2527 |
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10.1007/s11664-021-09411-8 doi (DE-627)OLC2078387479 (DE-He213)s11664-021-09411-8-p DE-627 ger DE-627 rakwb eng 670 VZ Perevalov, T. V. verfasserin (orcid)0000-0003-0895-6202 aut Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. Low- dielectric charge transport trap energy photoluminescence Gismatulin, A. A. aut Gritsenko, V. A. aut Xu, H. aut Zhang, J. aut Vorotilov, K. A. aut Baklanov, M. R. aut Enthalten in Journal of electronic materials Springer US, 1972 51(2022), 5 vom: 06. März, Seite 2521-2527 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:51 year:2022 number:5 day:06 month:03 pages:2521-2527 https://doi.org/10.1007/s11664-021-09411-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 51 2022 5 06 03 2521-2527 |
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10.1007/s11664-021-09411-8 doi (DE-627)OLC2078387479 (DE-He213)s11664-021-09411-8-p DE-627 ger DE-627 rakwb eng 670 VZ Perevalov, T. V. verfasserin (orcid)0000-0003-0895-6202 aut Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. Low- dielectric charge transport trap energy photoluminescence Gismatulin, A. A. aut Gritsenko, V. A. aut Xu, H. aut Zhang, J. aut Vorotilov, K. A. aut Baklanov, M. R. aut Enthalten in Journal of electronic materials Springer US, 1972 51(2022), 5 vom: 06. März, Seite 2521-2527 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:51 year:2022 number:5 day:06 month:03 pages:2521-2527 https://doi.org/10.1007/s11664-021-09411-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 51 2022 5 06 03 2521-2527 |
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10.1007/s11664-021-09411-8 doi (DE-627)OLC2078387479 (DE-He213)s11664-021-09411-8-p DE-627 ger DE-627 rakwb eng 670 VZ Perevalov, T. V. verfasserin (orcid)0000-0003-0895-6202 aut Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. Low- dielectric charge transport trap energy photoluminescence Gismatulin, A. A. aut Gritsenko, V. A. aut Xu, H. aut Zhang, J. aut Vorotilov, K. A. aut Baklanov, M. R. aut Enthalten in Journal of electronic materials Springer US, 1972 51(2022), 5 vom: 06. März, Seite 2521-2527 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:51 year:2022 number:5 day:06 month:03 pages:2521-2527 https://doi.org/10.1007/s11664-021-09411-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 51 2022 5 06 03 2521-2527 |
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10.1007/s11664-021-09411-8 doi (DE-627)OLC2078387479 (DE-He213)s11664-021-09411-8-p DE-627 ger DE-627 rakwb eng 670 VZ Perevalov, T. V. verfasserin (orcid)0000-0003-0895-6202 aut Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. Low- dielectric charge transport trap energy photoluminescence Gismatulin, A. A. aut Gritsenko, V. A. aut Xu, H. aut Zhang, J. aut Vorotilov, K. A. aut Baklanov, M. R. aut Enthalten in Journal of electronic materials Springer US, 1972 51(2022), 5 vom: 06. März, Seite 2521-2527 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:51 year:2022 number:5 day:06 month:03 pages:2521-2527 https://doi.org/10.1007/s11664-021-09411-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 51 2022 5 06 03 2521-2527 |
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Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric |
| abstract |
Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. © The Minerals, Metals & Materials Society 2022 |
| abstractGer |
Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. © The Minerals, Metals & Materials Society 2022 |
| abstract_unstemmed |
Abstract One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov–Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I–V–T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy. © The Minerals, Metals & Materials Society 2022 |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY |
| container_issue |
5 |
| title_short |
Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric |
| url |
https://doi.org/10.1007/s11664-021-09411-8 |
| remote_bool |
false |
| author2 |
Gismatulin, A. A. Gritsenko, V. A. Xu, H. Zhang, J. Vorotilov, K. A. Baklanov, M. R. |
| author2Str |
Gismatulin, A. A. Gritsenko, V. A. Xu, H. Zhang, J. Vorotilov, K. A. Baklanov, M. R. |
| ppnlink |
129398233 |
| mediatype_str_mv |
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false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11664-021-09411-8 |
| up_date |
2024-07-03T20:12:04.624Z |
| _version_ |
1803590067422232576 |
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7.399476 |