Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers
Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determ...
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Gespeichert in:
| Autor*in: |
Nishio, Johji [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2022 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 52(2022), 1 vom: 31. Okt., Seite 679-690 |
|---|---|
| Übergeordnetes Werk: |
volume:52 ; year:2022 ; number:1 ; day:31 ; month:10 ; pages:679-690 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-022-10038-6 |
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OLC2080121103 |
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| 520 | |a Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. | ||
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10.1007/s11664-022-10038-6 doi (DE-627)OLC2080121103 (DE-He213)s11664-022-10038-6-p DE-627 ger DE-627 rakwb eng 670 VZ Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. 4H-SiC forward degradation single Shockley stacking fault partial dislocation transmission electron microscopy Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Springer US, 1972 52(2022), 1 vom: 31. Okt., Seite 679-690 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:52 year:2022 number:1 day:31 month:10 pages:679-690 https://doi.org/10.1007/s11664-022-10038-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 52 2022 1 31 10 679-690 |
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10.1007/s11664-022-10038-6 doi (DE-627)OLC2080121103 (DE-He213)s11664-022-10038-6-p DE-627 ger DE-627 rakwb eng 670 VZ Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. 4H-SiC forward degradation single Shockley stacking fault partial dislocation transmission electron microscopy Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Springer US, 1972 52(2022), 1 vom: 31. Okt., Seite 679-690 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:52 year:2022 number:1 day:31 month:10 pages:679-690 https://doi.org/10.1007/s11664-022-10038-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 52 2022 1 31 10 679-690 |
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10.1007/s11664-022-10038-6 doi (DE-627)OLC2080121103 (DE-He213)s11664-022-10038-6-p DE-627 ger DE-627 rakwb eng 670 VZ Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. 4H-SiC forward degradation single Shockley stacking fault partial dislocation transmission electron microscopy Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Springer US, 1972 52(2022), 1 vom: 31. Okt., Seite 679-690 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:52 year:2022 number:1 day:31 month:10 pages:679-690 https://doi.org/10.1007/s11664-022-10038-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 52 2022 1 31 10 679-690 |
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10.1007/s11664-022-10038-6 doi (DE-627)OLC2080121103 (DE-He213)s11664-022-10038-6-p DE-627 ger DE-627 rakwb eng 670 VZ Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers 2022 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2022 Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. 4H-SiC forward degradation single Shockley stacking fault partial dislocation transmission electron microscopy Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Springer US, 1972 52(2022), 1 vom: 31. Okt., Seite 679-690 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:52 year:2022 number:1 day:31 month:10 pages:679-690 https://doi.org/10.1007/s11664-022-10038-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 52 2022 1 31 10 679-690 |
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10.1007/s11664-022-10038-6 |
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origin of double-rhombic single shockley stacking faults in 4h-sic epitaxial layers |
| title_auth |
Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers |
| abstract |
Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. © The Minerals, Metals & Materials Society 2022 |
| abstractGer |
Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. © The Minerals, Metals & Materials Society 2022 |
| abstract_unstemmed |
Abstract We have investigated double-rhombic single Shockley stacking faults (DRSFs) in 4H-SiC epitaxial layers by analyzing structural details. A combination of plan-view transmission electron microscopy (TEM) and cross-sectional high-angle annular dark field scanning TEM made it possible to determine the Burgers vectors of partial dislocations that consist of DRSF boundaries and the type of glide of the original basal plane dislocations (BPDs). From these results, the origins of DRSFs were identified as BPDs that originated as 60-degree perfect dislocations, and the inclination of the DRSFs was found to depend on the Burgers vectors and the type of glide of the original BPDs. Also, the configuration of the accompanying threading edge dislocations (TEDs) at both ends of the BPDs was categorized into two types, namely (1) TEDs at both ends of the BPD segments toward the surface of the epitaxial layer (cis-configuration) which form the half-loop arrays, and (2) a TED at one end of the BPD from the deeper side of the epitaxial layer and another toward the surface of the epitaxial layer (trans-configuration), and the original BPD segments were isolated. The shrinking processes of the DRSFs were also examined, and it was found that they were not a reversal of the expansion process. © The Minerals, Metals & Materials Society 2022 |
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Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers |
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Ota, Chiharu Iijima, Ryosuke |
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