On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the he...
Ausführliche Beschreibung
Autor*in: |
Das, Mukul K. [verfasserIn] |
---|
Format: |
Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2009 |
---|
Schlagwörter: |
---|
Anmerkung: |
© Springer Science+Business Media, LLC. 2010 |
---|
Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Springer US, 1975, 41(2009), 7 vom: Mai, Seite 539-549 |
---|---|
Übergeordnetes Werk: |
volume:41 ; year:2009 ; number:7 ; month:05 ; pages:539-549 |
Links: |
---|
DOI / URN: |
10.1007/s11082-009-9356-4 |
---|
Katalog-ID: |
OLC2081980762 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2081980762 | ||
003 | DE-627 | ||
005 | 20230503233759.0 | ||
007 | tu | ||
008 | 230228s2009 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/s11082-009-9356-4 |2 doi | |
035 | |a (DE-627)OLC2081980762 | ||
035 | |a (DE-He213)s11082-009-9356-4-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 500 |a 620 |q VZ |
100 | 1 | |a Das, Mukul K. |e verfasserin |4 aut | |
245 | 1 | 0 | |a On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
264 | 1 | |c 2009 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Springer Science+Business Media, LLC. 2010 | ||
520 | |a Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. | ||
650 | 4 | |a SiGe | |
650 | 4 | |a Photodetector | |
650 | 4 | |a Bandwidth | |
650 | 4 | |a Responsivity | |
650 | 4 | |a BW-QE product | |
650 | 4 | |a Ge-content | |
650 | 4 | |a Multiple quantum well | |
650 | 4 | |a Resonant cavity enhanced | |
700 | 1 | |a Das, N. R. |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Optical and quantum electronics |d Springer US, 1975 |g 41(2009), 7 vom: Mai, Seite 539-549 |w (DE-627)129419540 |w (DE-600)189950-8 |w (DE-576)014796139 |x 0306-8919 |7 nnns |
773 | 1 | 8 | |g volume:41 |g year:2009 |g number:7 |g month:05 |g pages:539-549 |
856 | 4 | 1 | |u https://doi.org/10.1007/s11082-009-9356-4 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_150 | ||
912 | |a GBV_ILN_4036 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 41 |j 2009 |e 7 |c 05 |h 539-549 |
author_variant |
m k d mk mkd n r d nr nrd |
---|---|
matchkey_str |
article:03068919:2009----::npiudsgsfreiieiqpooeetrolnw |
hierarchy_sort_str |
2009 |
publishDate |
2009 |
allfields |
10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
spelling |
10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
allfields_unstemmed |
10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
allfieldsGer |
10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
allfieldsSound |
10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
language |
English |
source |
Enthalten in Optical and quantum electronics 41(2009), 7 vom: Mai, Seite 539-549 volume:41 year:2009 number:7 month:05 pages:539-549 |
sourceStr |
Enthalten in Optical and quantum electronics 41(2009), 7 vom: Mai, Seite 539-549 volume:41 year:2009 number:7 month:05 pages:539-549 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced |
dewey-raw |
500 |
isfreeaccess_bool |
false |
container_title |
Optical and quantum electronics |
authorswithroles_txt_mv |
Das, Mukul K. @@aut@@ Das, N. R. @@aut@@ |
publishDateDaySort_date |
2009-05-01T00:00:00Z |
hierarchy_top_id |
129419540 |
dewey-sort |
3500 |
id |
OLC2081980762 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2081980762</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503233759.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230228s2009 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11082-009-9356-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2081980762</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11082-009-9356-4-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">500</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Das, Mukul K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC. 2010</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiGe</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photodetector</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Responsivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BW-QE product</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ge-content</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multiple quantum well</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resonant cavity enhanced</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Das, N. R.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Optical and quantum electronics</subfield><subfield code="d">Springer US, 1975</subfield><subfield code="g">41(2009), 7 vom: Mai, Seite 539-549</subfield><subfield code="w">(DE-627)129419540</subfield><subfield code="w">(DE-600)189950-8</subfield><subfield code="w">(DE-576)014796139</subfield><subfield code="x">0306-8919</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:41</subfield><subfield code="g">year:2009</subfield><subfield code="g">number:7</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:539-549</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11082-009-9356-4</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">41</subfield><subfield code="j">2009</subfield><subfield code="e">7</subfield><subfield code="c">05</subfield><subfield code="h">539-549</subfield></datafield></record></collection>
|
author |
Das, Mukul K. |
spellingShingle |
Das, Mukul K. ddc 500 misc SiGe misc Photodetector misc Bandwidth misc Responsivity misc BW-QE product misc Ge-content misc Multiple quantum well misc Resonant cavity enhanced On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
authorStr |
Das, Mukul K. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129419540 |
format |
Article |
dewey-ones |
500 - Natural sciences & mathematics 620 - Engineering & allied operations |
delete_txt_mv |
keep |
author_role |
aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0306-8919 |
topic_title |
500 620 VZ On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced |
topic |
ddc 500 misc SiGe misc Photodetector misc Bandwidth misc Responsivity misc BW-QE product misc Ge-content misc Multiple quantum well misc Resonant cavity enhanced |
topic_unstemmed |
ddc 500 misc SiGe misc Photodetector misc Bandwidth misc Responsivity misc BW-QE product misc Ge-content misc Multiple quantum well misc Resonant cavity enhanced |
topic_browse |
ddc 500 misc SiGe misc Photodetector misc Bandwidth misc Responsivity misc BW-QE product misc Ge-content misc Multiple quantum well misc Resonant cavity enhanced |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Optical and quantum electronics |
hierarchy_parent_id |
129419540 |
dewey-tens |
500 - Science 620 - Engineering |
hierarchy_top_title |
Optical and quantum electronics |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 |
title |
On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
ctrlnum |
(DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p |
title_full |
On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
author_sort |
Das, Mukul K. |
journal |
Optical and quantum electronics |
journalStr |
Optical and quantum electronics |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science 600 - Technology |
recordtype |
marc |
publishDateSort |
2009 |
contenttype_str_mv |
txt |
container_start_page |
539 |
author_browse |
Das, Mukul K. Das, N. R. |
container_volume |
41 |
class |
500 620 VZ |
format_se |
Aufsätze |
author-letter |
Das, Mukul K. |
doi_str_mv |
10.1007/s11082-009-9356-4 |
dewey-full |
500 620 |
title_sort |
on optimum designs of a rce si/sige/si mqw photodetector for long wavelength applications |
title_auth |
On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
abstract |
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
abstractGer |
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
abstract_unstemmed |
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 |
container_issue |
7 |
title_short |
On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
url |
https://doi.org/10.1007/s11082-009-9356-4 |
remote_bool |
false |
author2 |
Das, N. R. |
author2Str |
Das, N. R. |
ppnlink |
129419540 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1007/s11082-009-9356-4 |
up_date |
2024-07-04T09:23:07.990Z |
_version_ |
1803639836373942272 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2081980762</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503233759.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230228s2009 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11082-009-9356-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2081980762</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11082-009-9356-4-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">500</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Das, Mukul K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC. 2010</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiGe</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photodetector</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Responsivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BW-QE product</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ge-content</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multiple quantum well</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resonant cavity enhanced</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Das, N. R.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Optical and quantum electronics</subfield><subfield code="d">Springer US, 1975</subfield><subfield code="g">41(2009), 7 vom: Mai, Seite 539-549</subfield><subfield code="w">(DE-627)129419540</subfield><subfield code="w">(DE-600)189950-8</subfield><subfield code="w">(DE-576)014796139</subfield><subfield code="x">0306-8919</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:41</subfield><subfield code="g">year:2009</subfield><subfield code="g">number:7</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:539-549</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11082-009-9356-4</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">41</subfield><subfield code="j">2009</subfield><subfield code="e">7</subfield><subfield code="c">05</subfield><subfield code="h">539-549</subfield></datafield></record></collection>
|
score |
7.400281 |