On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the he...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Das, Mukul K. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC. 2010 |
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| Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Springer US, 1975, 41(2009), 7 vom: Mai, Seite 539-549 |
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| Übergeordnetes Werk: |
volume:41 ; year:2009 ; number:7 ; month:05 ; pages:539-549 |
| Links: |
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| DOI / URN: |
10.1007/s11082-009-9356-4 |
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| Katalog-ID: |
OLC2081980762 |
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| 520 | |a Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. | ||
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10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
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10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
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10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
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10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
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10.1007/s11082-009-9356-4 doi (DE-627)OLC2081980762 (DE-He213)s11082-009-9356-4-p DE-627 ger DE-627 rakwb eng 500 620 VZ Das, Mukul K. verfasserin aut On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC. 2010 Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. SiGe Photodetector Bandwidth Responsivity BW-QE product Ge-content Multiple quantum well Resonant cavity enhanced Das, N. R. aut Enthalten in Optical and quantum electronics Springer US, 1975 41(2009), 7 vom: Mai, Seite 539-549 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:41 year:2009 number:7 month:05 pages:539-549 https://doi.org/10.1007/s11082-009-9356-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 GBV_ILN_4036 GBV_ILN_4307 GBV_ILN_4700 AR 41 2009 7 05 539-549 |
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On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
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Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
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Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
| abstract_unstemmed |
Abstract In the present paper, performance analysis of a resonant-cavity-enhanced Si/$ Si_{1–y} $$ Ge_{y} $/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active $ Si_{1–y} $$ Ge_{y} $ layers and carrier trapping by the potential barriers at the heterointerfaces of Si/$ Si_{1–y} $$ Ge_{y} $/Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BW-quantum efficiency product. © Springer Science+Business Media, LLC. 2010 |
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On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications |
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10.1007/s11082-009-9356-4 |
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2024-07-04T09:23:07.990Z |
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