Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures
Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Eustergerling, Brett [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© American Society for Mass Spectrometry 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the American Society for Mass Spectrometry - Springer-Verlag, 1990, 18(2007), 11 vom: 01. Nov., Seite 1950-1958 |
|---|---|
| Übergeordnetes Werk: |
volume:18 ; year:2007 ; number:11 ; day:01 ; month:11 ; pages:1950-1958 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.jasms.2007.08.012 |
|---|
| Katalog-ID: |
OLC2097670482 |
|---|
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| 520 | |a Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. | ||
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10.1016/j.jasms.2007.08.012 doi (DE-627)OLC2097670482 (DE-He213)j.jasms.2007.08.012-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Eustergerling, Brett verfasserin aut Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Society for Mass Spectrometry 2007 Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit Hèden, Martin aut Shi, Yujun aut Enthalten in Journal of the American Society for Mass Spectrometry Springer-Verlag, 1990 18(2007), 11 vom: 01. Nov., Seite 1950-1958 (DE-627)130977357 (DE-600)1073671-2 (DE-576)277732093 1044-0305 nnns volume:18 year:2007 number:11 day:01 month:11 pages:1950-1958 https://doi.org/10.1016/j.jasms.2007.08.012 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 GBV_ILN_4012 GBV_ILN_4125 GBV_ILN_4307 GBV_ILN_4313 AR 18 2007 11 01 11 1950-1958 |
| spelling |
10.1016/j.jasms.2007.08.012 doi (DE-627)OLC2097670482 (DE-He213)j.jasms.2007.08.012-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Eustergerling, Brett verfasserin aut Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Society for Mass Spectrometry 2007 Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit Hèden, Martin aut Shi, Yujun aut Enthalten in Journal of the American Society for Mass Spectrometry Springer-Verlag, 1990 18(2007), 11 vom: 01. Nov., Seite 1950-1958 (DE-627)130977357 (DE-600)1073671-2 (DE-576)277732093 1044-0305 nnns volume:18 year:2007 number:11 day:01 month:11 pages:1950-1958 https://doi.org/10.1016/j.jasms.2007.08.012 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 GBV_ILN_4012 GBV_ILN_4125 GBV_ILN_4307 GBV_ILN_4313 AR 18 2007 11 01 11 1950-1958 |
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10.1016/j.jasms.2007.08.012 doi (DE-627)OLC2097670482 (DE-He213)j.jasms.2007.08.012-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Eustergerling, Brett verfasserin aut Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Society for Mass Spectrometry 2007 Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit Hèden, Martin aut Shi, Yujun aut Enthalten in Journal of the American Society for Mass Spectrometry Springer-Verlag, 1990 18(2007), 11 vom: 01. Nov., Seite 1950-1958 (DE-627)130977357 (DE-600)1073671-2 (DE-576)277732093 1044-0305 nnns volume:18 year:2007 number:11 day:01 month:11 pages:1950-1958 https://doi.org/10.1016/j.jasms.2007.08.012 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 GBV_ILN_4012 GBV_ILN_4125 GBV_ILN_4307 GBV_ILN_4313 AR 18 2007 11 01 11 1950-1958 |
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10.1016/j.jasms.2007.08.012 doi (DE-627)OLC2097670482 (DE-He213)j.jasms.2007.08.012-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Eustergerling, Brett verfasserin aut Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Society for Mass Spectrometry 2007 Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit Hèden, Martin aut Shi, Yujun aut Enthalten in Journal of the American Society for Mass Spectrometry Springer-Verlag, 1990 18(2007), 11 vom: 01. Nov., Seite 1950-1958 (DE-627)130977357 (DE-600)1073671-2 (DE-576)277732093 1044-0305 nnns volume:18 year:2007 number:11 day:01 month:11 pages:1950-1958 https://doi.org/10.1016/j.jasms.2007.08.012 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 GBV_ILN_4012 GBV_ILN_4125 GBV_ILN_4307 GBV_ILN_4313 AR 18 2007 11 01 11 1950-1958 |
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10.1016/j.jasms.2007.08.012 doi (DE-627)OLC2097670482 (DE-He213)j.jasms.2007.08.012-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Eustergerling, Brett verfasserin aut Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Society for Mass Spectrometry 2007 Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit Hèden, Martin aut Shi, Yujun aut Enthalten in Journal of the American Society for Mass Spectrometry Springer-Verlag, 1990 18(2007), 11 vom: 01. Nov., Seite 1950-1958 (DE-627)130977357 (DE-600)1073671-2 (DE-576)277732093 1044-0305 nnns volume:18 year:2007 number:11 day:01 month:11 pages:1950-1958 https://doi.org/10.1016/j.jasms.2007.08.012 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 GBV_ILN_4012 GBV_ILN_4125 GBV_ILN_4307 GBV_ILN_4313 AR 18 2007 11 01 11 1950-1958 |
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Eustergerling, Brett |
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Eustergerling, Brett ddc 530 ssgn 11 misc Extraction Plate misc LIEI Mode misc Decomposition Percentage misc Silac Yclobutane misc Silicon Nitride Deposit Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures |
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530 VZ 11 ssgn Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures Extraction Plate LIEI Mode Decomposition Percentage Silac Yclobutane Silicon Nitride Deposit |
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Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures |
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Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures |
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application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ sih_{4} $-$ nh_{3} $ gas mixtures |
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Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with $ SiH_{4} $-$ NH_{3} $ gas mixtures |
| abstract |
Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. © American Society for Mass Spectrometry 2007 |
| abstractGer |
Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. © American Society for Mass Spectrometry 2007 |
| abstract_unstemmed |
Abstract The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the $ SiH_{4} $/$ NH_{3} $ hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., $ H_{2} $, $ N_{2} $ and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their “fingerprint” fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both $ NH_{3} $ and $ SiH_{4} $ in the HWCVD reactor. In using the LIEI source to $ SiH_{4} $, $ NH_{3} $ and their mixtures, it has been shown that the $ NH_{3} $ decomposition is suppressed with the addition of $ SiH_{4} $ molecules. Examination of the $ NH_{3} $ decomposition percentage and the time to reach the $ N_{2} $ and $ H_{2} $ steady-state intensities for various $ NH_{3} $/$ SiH_{4} $ mixtures suggests that the extent of the suppression is enhanced with more $ SiH_{4} $ content in the mixture. With increasing filament temperatures, the negative effect of $ SiH_{4} $ becomes less important. © American Society for Mass Spectrometry 2007 |
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