Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect...
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Gespeichert in:
| Autor*in: |
Lan, Tian [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2020 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 49(2020), 9 vom: 17. Juni, Seite 5302-5307 |
|---|---|
| Übergeordnetes Werk: |
volume:49 ; year:2020 ; number:9 ; day:17 ; month:06 ; pages:5302-5307 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-020-08242-3 |
|---|
| Katalog-ID: |
OLC2118914326 |
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| 520 | |a Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). | ||
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10.1007/s11664-020-08242-3 doi (DE-627)OLC2118914326 (DE-He213)s11664-020-08242-3-p DE-627 ger DE-627 rakwb eng 670 VZ Lan, Tian verfasserin aut Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids Gao, Zhaojing aut Barbosa, Martin S. aut Santato, Clara aut Enthalten in Journal of electronic materials Springer US, 1972 49(2020), 9 vom: 17. Juni, Seite 5302-5307 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:49 year:2020 number:9 day:17 month:06 pages:5302-5307 https://doi.org/10.1007/s11664-020-08242-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 49 2020 9 17 06 5302-5307 |
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10.1007/s11664-020-08242-3 doi (DE-627)OLC2118914326 (DE-He213)s11664-020-08242-3-p DE-627 ger DE-627 rakwb eng 670 VZ Lan, Tian verfasserin aut Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids Gao, Zhaojing aut Barbosa, Martin S. aut Santato, Clara aut Enthalten in Journal of electronic materials Springer US, 1972 49(2020), 9 vom: 17. Juni, Seite 5302-5307 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:49 year:2020 number:9 day:17 month:06 pages:5302-5307 https://doi.org/10.1007/s11664-020-08242-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 49 2020 9 17 06 5302-5307 |
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10.1007/s11664-020-08242-3 doi (DE-627)OLC2118914326 (DE-He213)s11664-020-08242-3-p DE-627 ger DE-627 rakwb eng 670 VZ Lan, Tian verfasserin aut Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids Gao, Zhaojing aut Barbosa, Martin S. aut Santato, Clara aut Enthalten in Journal of electronic materials Springer US, 1972 49(2020), 9 vom: 17. Juni, Seite 5302-5307 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:49 year:2020 number:9 day:17 month:06 pages:5302-5307 https://doi.org/10.1007/s11664-020-08242-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 49 2020 9 17 06 5302-5307 |
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10.1007/s11664-020-08242-3 doi (DE-627)OLC2118914326 (DE-He213)s11664-020-08242-3-p DE-627 ger DE-627 rakwb eng 670 VZ Lan, Tian verfasserin aut Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids Gao, Zhaojing aut Barbosa, Martin S. aut Santato, Clara aut Enthalten in Journal of electronic materials Springer US, 1972 49(2020), 9 vom: 17. Juni, Seite 5302-5307 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:49 year:2020 number:9 day:17 month:06 pages:5302-5307 https://doi.org/10.1007/s11664-020-08242-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 49 2020 9 17 06 5302-5307 |
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10.1007/s11664-020-08242-3 doi (DE-627)OLC2118914326 (DE-He213)s11664-020-08242-3-p DE-627 ger DE-627 rakwb eng 670 VZ Lan, Tian verfasserin aut Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids Gao, Zhaojing aut Barbosa, Martin S. aut Santato, Clara aut Enthalten in Journal of electronic materials Springer US, 1972 49(2020), 9 vom: 17. Juni, Seite 5302-5307 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:49 year:2020 number:9 day:17 month:06 pages:5302-5307 https://doi.org/10.1007/s11664-020-08242-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 49 2020 9 17 06 5302-5307 |
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Lan, Tian Gao, Zhaojing Barbosa, Martin S. Santato, Clara |
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Lan, Tian |
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flexible ion-gated transistors making use of poly-3-hexylthiophene (p3ht): effect of the molecular weight on the effectiveness of gating and device performance |
| title_auth |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
| abstract |
Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). © The Minerals, Metals & Materials Society 2020 |
| abstractGer |
Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). © The Minerals, Metals & Materials Society 2020 |
| abstract_unstemmed |
Abstract Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid ($ SiO_{2} $/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). © The Minerals, Metals & Materials Society 2020 |
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| title_short |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
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Gao, Zhaojing Barbosa, Martin S. Santato, Clara |
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2024-07-03T22:14:12.226Z |
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