Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode
The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at rever...
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Gespeichert in:
| Autor*in: |
Petrova, Yu. S. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2020 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 63(2020), 5 vom: Sept., Seite 882-887 |
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| Übergeordnetes Werk: |
volume:63 ; year:2020 ; number:5 ; month:09 ; pages:882-887 |
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| DOI / URN: |
10.1007/s11182-020-02112-5 |
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| 520 | |a The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. | ||
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10.1007/s11182-020-02112-5 doi (DE-627)OLC2119695946 (DE-He213)s11182-020-02112-5-p DE-627 ger DE-627 rakwb eng 530 370 VZ Petrova, Yu. S. verfasserin aut Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. Ga O films GaAs thermal annealing UV-radiation Almaev, A. V. aut Kalygina, V. M. aut Taller, E. V. aut Shcherbakov, P. S. aut Enthalten in Russian physics journal Springer US, 1992 63(2020), 5 vom: Sept., Seite 882-887 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:63 year:2020 number:5 month:09 pages:882-887 https://doi.org/10.1007/s11182-020-02112-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 63 2020 5 09 882-887 |
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10.1007/s11182-020-02112-5 doi (DE-627)OLC2119695946 (DE-He213)s11182-020-02112-5-p DE-627 ger DE-627 rakwb eng 530 370 VZ Petrova, Yu. S. verfasserin aut Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. Ga O films GaAs thermal annealing UV-radiation Almaev, A. V. aut Kalygina, V. M. aut Taller, E. V. aut Shcherbakov, P. S. aut Enthalten in Russian physics journal Springer US, 1992 63(2020), 5 vom: Sept., Seite 882-887 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:63 year:2020 number:5 month:09 pages:882-887 https://doi.org/10.1007/s11182-020-02112-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 63 2020 5 09 882-887 |
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10.1007/s11182-020-02112-5 doi (DE-627)OLC2119695946 (DE-He213)s11182-020-02112-5-p DE-627 ger DE-627 rakwb eng 530 370 VZ Petrova, Yu. S. verfasserin aut Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. Ga O films GaAs thermal annealing UV-radiation Almaev, A. V. aut Kalygina, V. M. aut Taller, E. V. aut Shcherbakov, P. S. aut Enthalten in Russian physics journal Springer US, 1992 63(2020), 5 vom: Sept., Seite 882-887 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:63 year:2020 number:5 month:09 pages:882-887 https://doi.org/10.1007/s11182-020-02112-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 63 2020 5 09 882-887 |
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10.1007/s11182-020-02112-5 doi (DE-627)OLC2119695946 (DE-He213)s11182-020-02112-5-p DE-627 ger DE-627 rakwb eng 530 370 VZ Petrova, Yu. S. verfasserin aut Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. Ga O films GaAs thermal annealing UV-radiation Almaev, A. V. aut Kalygina, V. M. aut Taller, E. V. aut Shcherbakov, P. S. aut Enthalten in Russian physics journal Springer US, 1992 63(2020), 5 vom: Sept., Seite 882-887 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:63 year:2020 number:5 month:09 pages:882-887 https://doi.org/10.1007/s11182-020-02112-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 63 2020 5 09 882-887 |
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10.1007/s11182-020-02112-5 doi (DE-627)OLC2119695946 (DE-He213)s11182-020-02112-5-p DE-627 ger DE-627 rakwb eng 530 370 VZ Petrova, Yu. S. verfasserin aut Anodic $ Gа_{2} $$ O_{3} $ Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. Ga O films GaAs thermal annealing UV-radiation Almaev, A. V. aut Kalygina, V. M. aut Taller, E. V. aut Shcherbakov, P. S. aut Enthalten in Russian physics journal Springer US, 1992 63(2020), 5 vom: Sept., Seite 882-887 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:63 year:2020 number:5 month:09 pages:882-887 https://doi.org/10.1007/s11182-020-02112-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 63 2020 5 09 882-887 |
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The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
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The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
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The electrical and photoelectrical characteristics of $ Ga_{2} $$ O_{3} $/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of $ Ga_{2} $$ O_{3} $/n-GaAs structures to UV-radiation increases by an order of magnitude. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
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