The Semiconductor p–n Junction “Ultimate Lamp”
Abstract Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.
Gespeichert in:
| Autor*in: |
Holonyak, Nick [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Schlagwörter: |
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| Anmerkung: |
© The Materials Research Society 2005 |
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| Übergeordnetes Werk: |
Enthalten in: MRS Bulletin - Springer International Publishing, 1983, 30(2005), 7 vom: Juli, Seite 515-517 |
|---|---|
| Übergeordnetes Werk: |
volume:30 ; year:2005 ; number:7 ; month:07 ; pages:515-517 |
| Links: |
|---|
| DOI / URN: |
10.1557/mrs2005.143 |
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10.1557/mrs2005.143 doi (DE-627)OLC2119820171 (DE-He213)mrs2005.143-p DE-627 ger DE-627 rakwb eng 670 VZ Holonyak, Nick verfasserin aut The Semiconductor p–n Junction “Ultimate Lamp” 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2005 Abstract Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode. p–n junctions LEDs light-emitting diodes Enthalten in MRS Bulletin Springer International Publishing, 1983 30(2005), 7 vom: Juli, Seite 515-517 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:30 year:2005 number:7 month:07 pages:515-517 https://doi.org/10.1557/mrs2005.143 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2014 GBV_ILN_2185 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 30 2005 7 07 515-517 |
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10.1557/mrs2005.143 doi (DE-627)OLC2119820171 (DE-He213)mrs2005.143-p DE-627 ger DE-627 rakwb eng 670 VZ Holonyak, Nick verfasserin aut The Semiconductor p–n Junction “Ultimate Lamp” 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2005 Abstract Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode. p–n junctions LEDs light-emitting diodes Enthalten in MRS Bulletin Springer International Publishing, 1983 30(2005), 7 vom: Juli, Seite 515-517 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:30 year:2005 number:7 month:07 pages:515-517 https://doi.org/10.1557/mrs2005.143 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2014 GBV_ILN_2185 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 30 2005 7 07 515-517 |
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10.1557/mrs2005.143 doi (DE-627)OLC2119820171 (DE-He213)mrs2005.143-p DE-627 ger DE-627 rakwb eng 670 VZ Holonyak, Nick verfasserin aut The Semiconductor p–n Junction “Ultimate Lamp” 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2005 Abstract Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode. p–n junctions LEDs light-emitting diodes Enthalten in MRS Bulletin Springer International Publishing, 1983 30(2005), 7 vom: Juli, Seite 515-517 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:30 year:2005 number:7 month:07 pages:515-517 https://doi.org/10.1557/mrs2005.143 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2014 GBV_ILN_2185 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 30 2005 7 07 515-517 |
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Abstract Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode. © The Materials Research Society 2005 |
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