On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles
Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interfac...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kuwabara, M. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1989 |
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| Systematik: |
|
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| Anmerkung: |
© The Materials Research Society 1989 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 4(1989), 4 vom: Juli, Seite 972-977 |
|---|---|
| Übergeordnetes Werk: |
volume:4 ; year:1989 ; number:4 ; month:07 ; pages:972-977 |
| Links: |
|---|
| DOI / URN: |
10.1557/JMR.1989.0972 |
|---|
| Katalog-ID: |
OLC2119953880 |
|---|
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| 245 | 1 | 0 | |a On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles |
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| 520 | |a Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. | ||
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10.1557/JMR.1989.0972 doi (DE-627)OLC2119953880 (DE-He213)JMR.1989.0972-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Kuwabara, M. verfasserin aut On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1989 Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. Spence, J. C. H. aut Ruhle, M. aut Enthalten in Journal of materials research Springer International Publishing, 1986 4(1989), 4 vom: Juli, Seite 972-977 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:4 year:1989 number:4 month:07 pages:972-977 https://doi.org/10.1557/JMR.1989.0972 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 4 1989 4 07 972-977 |
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10.1557/JMR.1989.0972 doi (DE-627)OLC2119953880 (DE-He213)JMR.1989.0972-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Kuwabara, M. verfasserin aut On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1989 Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. Spence, J. C. H. aut Ruhle, M. aut Enthalten in Journal of materials research Springer International Publishing, 1986 4(1989), 4 vom: Juli, Seite 972-977 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:4 year:1989 number:4 month:07 pages:972-977 https://doi.org/10.1557/JMR.1989.0972 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 4 1989 4 07 972-977 |
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10.1557/JMR.1989.0972 doi (DE-627)OLC2119953880 (DE-He213)JMR.1989.0972-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Kuwabara, M. verfasserin aut On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1989 Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. Spence, J. C. H. aut Ruhle, M. aut Enthalten in Journal of materials research Springer International Publishing, 1986 4(1989), 4 vom: Juli, Seite 972-977 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:4 year:1989 number:4 month:07 pages:972-977 https://doi.org/10.1557/JMR.1989.0972 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 4 1989 4 07 972-977 |
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10.1557/JMR.1989.0972 doi (DE-627)OLC2119953880 (DE-He213)JMR.1989.0972-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Kuwabara, M. verfasserin aut On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1989 Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. Spence, J. C. H. aut Ruhle, M. aut Enthalten in Journal of materials research Springer International Publishing, 1986 4(1989), 4 vom: Juli, Seite 972-977 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:4 year:1989 number:4 month:07 pages:972-977 https://doi.org/10.1557/JMR.1989.0972 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 4 1989 4 07 972-977 |
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10.1557/JMR.1989.0972 doi (DE-627)OLC2119953880 (DE-He213)JMR.1989.0972-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Kuwabara, M. verfasserin aut On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1989 Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. Spence, J. C. H. aut Ruhle, M. aut Enthalten in Journal of materials research Springer International Publishing, 1986 4(1989), 4 vom: Juli, Seite 972-977 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:4 year:1989 number:4 month:07 pages:972-977 https://doi.org/10.1557/JMR.1989.0972 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 4 1989 4 07 972-977 |
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On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles |
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On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles |
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Kuwabara, M. |
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Kuwabara, M. Spence, J. C. H. Ruhle, M. |
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Kuwabara, M. |
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670 |
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on the atomic structure of the nb/$ al_{2} $$ o_{3} $ interface and the growth of $ al_{2} $$ o_{3} $ particles |
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On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles |
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Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. © The Materials Research Society 1989 |
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Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. © The Materials Research Society 1989 |
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Abstract The growth mechanism for small precipitates of $ Al_{2} $$ O_{3} $ formed by internal oxidation in the Nb–$ Al_{2} $$ O_{3} $ interface is studied in detail. The observations show that the Nb (001)/$ Al_{2} $$ O_{3} $ (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the $ Al_{2} $$ O_{3} $ side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. © The Materials Research Society 1989 |
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On the atomic structure of the Nb/$ Al_{2} $$ O_{3} $ interface and the growth of $ Al_{2} $$ O_{3} $ particles |
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