Damage accumulation in diamond during ion implantation
Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Khmelnitsky, Roman A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Systematik: |
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| Anmerkung: |
© The Materials Research Society 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 30(2015), 9 vom: 01. Mai, Seite 1583-1592 |
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| Übergeordnetes Werk: |
volume:30 ; year:2015 ; number:9 ; day:01 ; month:05 ; pages:1583-1592 |
| Links: |
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| DOI / URN: |
10.1557/jmr.2015.21 |
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OLC2119978204 |
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| 520 | |a Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. | ||
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| 700 | 1 | |a Khomich, Andrey A. |4 aut | |
| 700 | 1 | |a Khomich, Alexander V. |4 aut | |
| 700 | 1 | |a Alekseev, Alexander A. |4 aut | |
| 700 | 1 | |a Terentiev, Sergey A. |4 aut | |
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10.1557/jmr.2015.21 doi (DE-627)OLC2119978204 (DE-He213)jmr.2015.21-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Khmelnitsky, Roman A. verfasserin aut Damage accumulation in diamond during ion implantation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2015 Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. Dravin, Valeriy A. aut Tal, Alexey A. aut Zavedeev, Evgeniy V. aut Khomich, Andrey A. aut Khomich, Alexander V. aut Alekseev, Alexander A. aut Terentiev, Sergey A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 30(2015), 9 vom: 01. Mai, Seite 1583-1592 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:30 year:2015 number:9 day:01 month:05 pages:1583-1592 https://doi.org/10.1557/jmr.2015.21 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 30 2015 9 01 05 1583-1592 |
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10.1557/jmr.2015.21 doi (DE-627)OLC2119978204 (DE-He213)jmr.2015.21-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Khmelnitsky, Roman A. verfasserin aut Damage accumulation in diamond during ion implantation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2015 Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. Dravin, Valeriy A. aut Tal, Alexey A. aut Zavedeev, Evgeniy V. aut Khomich, Andrey A. aut Khomich, Alexander V. aut Alekseev, Alexander A. aut Terentiev, Sergey A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 30(2015), 9 vom: 01. Mai, Seite 1583-1592 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:30 year:2015 number:9 day:01 month:05 pages:1583-1592 https://doi.org/10.1557/jmr.2015.21 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 30 2015 9 01 05 1583-1592 |
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10.1557/jmr.2015.21 doi (DE-627)OLC2119978204 (DE-He213)jmr.2015.21-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Khmelnitsky, Roman A. verfasserin aut Damage accumulation in diamond during ion implantation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2015 Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. Dravin, Valeriy A. aut Tal, Alexey A. aut Zavedeev, Evgeniy V. aut Khomich, Andrey A. aut Khomich, Alexander V. aut Alekseev, Alexander A. aut Terentiev, Sergey A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 30(2015), 9 vom: 01. Mai, Seite 1583-1592 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:30 year:2015 number:9 day:01 month:05 pages:1583-1592 https://doi.org/10.1557/jmr.2015.21 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 30 2015 9 01 05 1583-1592 |
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10.1557/jmr.2015.21 doi (DE-627)OLC2119978204 (DE-He213)jmr.2015.21-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Khmelnitsky, Roman A. verfasserin aut Damage accumulation in diamond during ion implantation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2015 Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. Dravin, Valeriy A. aut Tal, Alexey A. aut Zavedeev, Evgeniy V. aut Khomich, Andrey A. aut Khomich, Alexander V. aut Alekseev, Alexander A. aut Terentiev, Sergey A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 30(2015), 9 vom: 01. Mai, Seite 1583-1592 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:30 year:2015 number:9 day:01 month:05 pages:1583-1592 https://doi.org/10.1557/jmr.2015.21 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 30 2015 9 01 05 1583-1592 |
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10.1557/jmr.2015.21 doi (DE-627)OLC2119978204 (DE-He213)jmr.2015.21-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Khmelnitsky, Roman A. verfasserin aut Damage accumulation in diamond during ion implantation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2015 Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. Dravin, Valeriy A. aut Tal, Alexey A. aut Zavedeev, Evgeniy V. aut Khomich, Andrey A. aut Khomich, Alexander V. aut Alekseev, Alexander A. aut Terentiev, Sergey A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 30(2015), 9 vom: 01. Mai, Seite 1583-1592 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:30 year:2015 number:9 day:01 month:05 pages:1583-1592 https://doi.org/10.1557/jmr.2015.21 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 30 2015 9 01 05 1583-1592 |
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670 |
| title_sort |
damage accumulation in diamond during ion implantation |
| title_auth |
Damage accumulation in diamond during ion implantation |
| abstract |
Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. © The Materials Research Society 2015 |
| abstractGer |
Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. © The Materials Research Society 2015 |
| abstract_unstemmed |
Abstract Single-crystalline diamond plates were implanted by $ He^{+} $ ions with a set of energies and fluences that ensure uniform radiation damage (RD) in a 670-nm-thick layer. Implantation is carried out at a wide range of fluences, which allows one to cover the range of RD levels from very low to complete graphitization of diamond. Using the measurement data on the bending of diamond plates and the surface swelling of the ion-implanted material, we calculate the mechanical stress and the density of diamond for various levels of RD. Diamonds with various levels of RD are investigated by the Raman scattering and optical transmission methods. We establish that, above the graphitization threshold, the diamond phase almost completely disappears as the RD level increases, while the fraction of sp2 material sharply increases. Such a material is unexpectedly ductile. It cannot be restored to diamond even by annealing under a pressure corresponding to thermodynamic stability of diamond. © The Materials Research Society 2015 |
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| title_short |
Damage accumulation in diamond during ion implantation |
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https://doi.org/10.1557/jmr.2015.21 |
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Dravin, Valeriy A. Tal, Alexey A. Zavedeev, Evgeniy V. Khomich, Andrey A. Khomich, Alexander V. Alekseev, Alexander A. Terentiev, Sergey A. |
| author2Str |
Dravin, Valeriy A. Tal, Alexey A. Zavedeev, Evgeniy V. Khomich, Andrey A. Khomich, Alexander V. Alekseev, Alexander A. Terentiev, Sergey A. |
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