Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. Fo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Grynkewich, G. [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2004 |
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| Schlagwörter: |
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| Anmerkung: |
© The Materials Research Society 2004 |
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| Übergeordnetes Werk: |
Enthalten in: MRS Bulletin - Springer International Publishing, 1983, 29(2004), 11 vom: Nov., Seite 818-821 |
|---|---|
| Übergeordnetes Werk: |
volume:29 ; year:2004 ; number:11 ; month:11 ; pages:818-821 |
| Links: |
|---|
| DOI / URN: |
10.1557/mrs2004.234 |
|---|
| Katalog-ID: |
OLC2121115331 |
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| 520 | |a Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. | ||
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| 700 | 1 | |a Dave, R. W. |4 aut | |
| 700 | 1 | |a DeHerrera, M. |4 aut | |
| 700 | 1 | |a Durlam, M. |4 aut | |
| 700 | 1 | |a Engel, B. N. |4 aut | |
| 700 | 1 | |a Janesky, J. |4 aut | |
| 700 | 1 | |a Pietambaram, S. |4 aut | |
| 700 | 1 | |a Rizzo, N. D. |4 aut | |
| 700 | 1 | |a Slaughter, J. M. |4 aut | |
| 700 | 1 | |a Smith, K. |4 aut | |
| 700 | 1 | |a Sun, J. J. |4 aut | |
| 700 | 1 | |a Tehrani, S. |4 aut | |
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10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
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Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
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Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
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Grynkewich, G. |
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Grynkewich, G. Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
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nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions |
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Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
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Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
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Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
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