Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. Fo...
Ausführliche Beschreibung
Autor*in: |
Grynkewich, G. [verfasserIn] |
---|
Format: |
Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2004 |
---|
Schlagwörter: |
---|
Anmerkung: |
© The Materials Research Society 2004 |
---|
Übergeordnetes Werk: |
Enthalten in: MRS Bulletin - Springer International Publishing, 1983, 29(2004), 11 vom: Nov., Seite 818-821 |
---|---|
Übergeordnetes Werk: |
volume:29 ; year:2004 ; number:11 ; month:11 ; pages:818-821 |
Links: |
---|
DOI / URN: |
10.1557/mrs2004.234 |
---|
Katalog-ID: |
OLC2121115331 |
---|
LEADER | 01000naa a22002652 4500 | ||
---|---|---|---|
001 | OLC2121115331 | ||
003 | DE-627 | ||
005 | 20230504182845.0 | ||
007 | tu | ||
008 | 230504s2004 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1557/mrs2004.234 |2 doi | |
035 | |a (DE-627)OLC2121115331 | ||
035 | |a (DE-He213)mrs2004.234-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 670 |q VZ |
100 | 1 | |a Grynkewich, G. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
264 | 1 | |c 2004 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © The Materials Research Society 2004 | ||
520 | |a Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. | ||
650 | 4 | |a magnetic memory | |
650 | 4 | |a magnetic switching | |
650 | 4 | |a MRAM | |
650 | 4 | |a MTJ | |
650 | 4 | |a magnetic tunnel junctions | |
650 | 4 | |a nonvolatile memory | |
700 | 1 | |a Åkerman, J. |4 aut | |
700 | 1 | |a Brown, P. |4 aut | |
700 | 1 | |a Butcher, B. |4 aut | |
700 | 1 | |a Dave, R. W. |4 aut | |
700 | 1 | |a DeHerrera, M. |4 aut | |
700 | 1 | |a Durlam, M. |4 aut | |
700 | 1 | |a Engel, B. N. |4 aut | |
700 | 1 | |a Janesky, J. |4 aut | |
700 | 1 | |a Pietambaram, S. |4 aut | |
700 | 1 | |a Rizzo, N. D. |4 aut | |
700 | 1 | |a Slaughter, J. M. |4 aut | |
700 | 1 | |a Smith, K. |4 aut | |
700 | 1 | |a Sun, J. J. |4 aut | |
700 | 1 | |a Tehrani, S. |4 aut | |
773 | 0 | 8 | |i Enthalten in |t MRS Bulletin |d Springer International Publishing, 1983 |g 29(2004), 11 vom: Nov., Seite 818-821 |w (DE-627)129384194 |w (DE-600)166165-6 |w (DE-576)014771594 |x 0883-7694 |7 nnns |
773 | 1 | 8 | |g volume:29 |g year:2004 |g number:11 |g month:11 |g pages:818-821 |
856 | 4 | 1 | |u https://doi.org/10.1557/mrs2004.234 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a GBV_ILN_21 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_4266 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4323 | ||
951 | |a AR | ||
952 | |d 29 |j 2004 |e 11 |c 11 |h 818-821 |
author_variant |
g g gg j å jå p b pb b b bb r w d rw rwd m d md m d md b n e bn bne j j jj s p sp n d r nd ndr j m s jm jms k s ks j j s jj jjs s t st |
---|---|
matchkey_str |
article:08837694:2004----::ovltlmgeoeitvrnoacsmmrbsdna |
hierarchy_sort_str |
2004 |
publishDate |
2004 |
allfields |
10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
spelling |
10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
allfields_unstemmed |
10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
allfieldsGer |
10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
allfieldsSound |
10.1557/mrs2004.234 doi (DE-627)OLC2121115331 (DE-He213)mrs2004.234-p DE-627 ger DE-627 rakwb eng 670 VZ Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2004 Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory Åkerman, J. aut Brown, P. aut Butcher, B. aut Dave, R. W. aut DeHerrera, M. aut Durlam, M. aut Engel, B. N. aut Janesky, J. aut Pietambaram, S. aut Rizzo, N. D. aut Slaughter, J. M. aut Smith, K. aut Sun, J. J. aut Tehrani, S. aut Enthalten in MRS Bulletin Springer International Publishing, 1983 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 0883-7694 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 AR 29 2004 11 11 818-821 |
language |
English |
source |
Enthalten in MRS Bulletin 29(2004), 11 vom: Nov., Seite 818-821 volume:29 year:2004 number:11 month:11 pages:818-821 |
sourceStr |
Enthalten in MRS Bulletin 29(2004), 11 vom: Nov., Seite 818-821 volume:29 year:2004 number:11 month:11 pages:818-821 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory |
dewey-raw |
670 |
isfreeaccess_bool |
false |
container_title |
MRS Bulletin |
authorswithroles_txt_mv |
Grynkewich, G. @@aut@@ Åkerman, J. @@aut@@ Brown, P. @@aut@@ Butcher, B. @@aut@@ Dave, R. W. @@aut@@ DeHerrera, M. @@aut@@ Durlam, M. @@aut@@ Engel, B. N. @@aut@@ Janesky, J. @@aut@@ Pietambaram, S. @@aut@@ Rizzo, N. D. @@aut@@ Slaughter, J. M. @@aut@@ Smith, K. @@aut@@ Sun, J. J. @@aut@@ Tehrani, S. @@aut@@ |
publishDateDaySort_date |
2004-11-01T00:00:00Z |
hierarchy_top_id |
129384194 |
dewey-sort |
3670 |
id |
OLC2121115331 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2121115331</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504182845.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230504s2004 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/mrs2004.234</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2121115331</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)mrs2004.234-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grynkewich, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Materials Research Society 2004</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic switching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MRAM</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MTJ</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic tunnel junctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonvolatile memory</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Åkerman, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Butcher, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dave, R. W.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">DeHerrera, M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Durlam, M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Engel, B. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Janesky, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pietambaram, S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rizzo, N. D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slaughter, J. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smith, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, J. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tehrani, S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS Bulletin</subfield><subfield code="d">Springer International Publishing, 1983</subfield><subfield code="g">29(2004), 11 vom: Nov., Seite 818-821</subfield><subfield code="w">(DE-627)129384194</subfield><subfield code="w">(DE-600)166165-6</subfield><subfield code="w">(DE-576)014771594</subfield><subfield code="x">0883-7694</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:818-821</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1557/mrs2004.234</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2004</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">818-821</subfield></datafield></record></collection>
|
author |
Grynkewich, G. |
spellingShingle |
Grynkewich, G. ddc 670 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
authorStr |
Grynkewich, G. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129384194 |
format |
Article |
dewey-ones |
670 - Manufacturing |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0883-7694 |
topic_title |
670 VZ Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory |
topic |
ddc 670 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
topic_unstemmed |
ddc 670 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
topic_browse |
ddc 670 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
MRS Bulletin |
hierarchy_parent_id |
129384194 |
dewey-tens |
670 - Manufacturing |
hierarchy_top_title |
MRS Bulletin |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129384194 (DE-600)166165-6 (DE-576)014771594 |
title |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
ctrlnum |
(DE-627)OLC2121115331 (DE-He213)mrs2004.234-p |
title_full |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
author_sort |
Grynkewich, G. |
journal |
MRS Bulletin |
journalStr |
MRS Bulletin |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology |
recordtype |
marc |
publishDateSort |
2004 |
contenttype_str_mv |
txt |
container_start_page |
818 |
author_browse |
Grynkewich, G. Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
container_volume |
29 |
class |
670 VZ |
format_se |
Aufsätze |
author-letter |
Grynkewich, G. |
doi_str_mv |
10.1557/mrs2004.234 |
dewey-full |
670 |
title_sort |
nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions |
title_auth |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
abstract |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
abstractGer |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
abstract_unstemmed |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. © The Materials Research Society 2004 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4323 |
container_issue |
11 |
title_short |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
url |
https://doi.org/10.1557/mrs2004.234 |
remote_bool |
false |
author2 |
Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
author2Str |
Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
ppnlink |
129384194 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1557/mrs2004.234 |
up_date |
2024-07-04T06:01:10.338Z |
_version_ |
1803627130078101504 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2121115331</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504182845.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230504s2004 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/mrs2004.234</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2121115331</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)mrs2004.234-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grynkewich, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Materials Research Society 2004</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic switching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MRAM</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MTJ</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic tunnel junctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonvolatile memory</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Åkerman, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Butcher, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dave, R. W.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">DeHerrera, M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Durlam, M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Engel, B. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Janesky, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pietambaram, S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rizzo, N. D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slaughter, J. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smith, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, J. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tehrani, S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS Bulletin</subfield><subfield code="d">Springer International Publishing, 1983</subfield><subfield code="g">29(2004), 11 vom: Nov., Seite 818-821</subfield><subfield code="w">(DE-627)129384194</subfield><subfield code="w">(DE-600)166165-6</subfield><subfield code="w">(DE-576)014771594</subfield><subfield code="x">0883-7694</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:818-821</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1557/mrs2004.234</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2004</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">818-821</subfield></datafield></record></collection>
|
score |
7.400216 |