The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $
Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Wa...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rankin, J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1992 |
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| Systematik: |
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| Anmerkung: |
© The Materials Research Society 1992 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 7(1992), 3 vom: März |
|---|---|
| Übergeordnetes Werk: |
volume:7 ; year:1992 ; number:3 ; month:03 |
| Links: |
|---|
| DOI / URN: |
10.1557/JMR.1992.0717 |
|---|
| Katalog-ID: |
OLC2123057703 |
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| 245 | 1 | 0 | |a The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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| 520 | |a Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. | ||
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10.1557/JMR.1992.0717 doi (DE-627)OLC2123057703 (DE-He213)JMR.1992.0717-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Rankin, J. verfasserin aut The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1992 Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. McCallum, J. C. aut Boatner, L. A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 7(1992), 3 vom: März (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:7 year:1992 number:3 month:03 https://doi.org/10.1557/JMR.1992.0717 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 7 1992 3 03 |
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10.1557/JMR.1992.0717 doi (DE-627)OLC2123057703 (DE-He213)JMR.1992.0717-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Rankin, J. verfasserin aut The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1992 Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. McCallum, J. C. aut Boatner, L. A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 7(1992), 3 vom: März (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:7 year:1992 number:3 month:03 https://doi.org/10.1557/JMR.1992.0717 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 7 1992 3 03 |
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10.1557/JMR.1992.0717 doi (DE-627)OLC2123057703 (DE-He213)JMR.1992.0717-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Rankin, J. verfasserin aut The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1992 Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. McCallum, J. C. aut Boatner, L. A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 7(1992), 3 vom: März (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:7 year:1992 number:3 month:03 https://doi.org/10.1557/JMR.1992.0717 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 7 1992 3 03 |
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10.1557/JMR.1992.0717 doi (DE-627)OLC2123057703 (DE-He213)JMR.1992.0717-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Rankin, J. verfasserin aut The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1992 Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. McCallum, J. C. aut Boatner, L. A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 7(1992), 3 vom: März (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:7 year:1992 number:3 month:03 https://doi.org/10.1557/JMR.1992.0717 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 7 1992 3 03 |
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10.1557/JMR.1992.0717 doi (DE-627)OLC2123057703 (DE-He213)JMR.1992.0717-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Rankin, J. verfasserin aut The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 1992 Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. McCallum, J. C. aut Boatner, L. A. aut Enthalten in Journal of materials research Springer International Publishing, 1986 7(1992), 3 vom: März (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:7 year:1992 number:3 month:03 https://doi.org/10.1557/JMR.1992.0717 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 7 1992 3 03 |
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670 VZ VA 5350 VZ rvk The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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the effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ srtio_{3} $ |
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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. © The Materials Research Society 1992 |
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Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. © The Materials Research Society 1992 |
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Abstract Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal $ SrTiO_{3} $. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of $ H_{2} $O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing $ H_{2} $O vapor, the $ SrTiO_{3} $ amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface. © The Materials Research Society 1992 |
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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized $ SrTiO_{3} $ |
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