Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder
Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, Byong-Taek [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Systematik: |
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| Anmerkung: |
© The Materials Research Society 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 22(2007), 3 vom: März, Seite 615-620 |
|---|---|
| Übergeordnetes Werk: |
volume:22 ; year:2007 ; number:3 ; month:03 ; pages:615-620 |
| Links: |
|---|
| DOI / URN: |
10.1557/jmr.2007.0070 |
|---|
| Katalog-ID: |
OLC2123071412 |
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| 520 | |a Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. | ||
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10.1557/jmr.2007.0070 doi (DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Lee, Byong-Taek verfasserin aut Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2007 Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. Paul, Rajat Kanti aut Lee, Kap-Ho aut Kim, Hai-Doo aut Enthalten in Journal of materials research Springer International Publishing, 1986 22(2007), 3 vom: März, Seite 615-620 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:22 year:2007 number:3 month:03 pages:615-620 https://doi.org/10.1557/jmr.2007.0070 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 22 2007 3 03 615-620 |
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10.1557/jmr.2007.0070 doi (DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Lee, Byong-Taek verfasserin aut Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2007 Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. Paul, Rajat Kanti aut Lee, Kap-Ho aut Kim, Hai-Doo aut Enthalten in Journal of materials research Springer International Publishing, 1986 22(2007), 3 vom: März, Seite 615-620 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:22 year:2007 number:3 month:03 pages:615-620 https://doi.org/10.1557/jmr.2007.0070 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 22 2007 3 03 615-620 |
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10.1557/jmr.2007.0070 doi (DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Lee, Byong-Taek verfasserin aut Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2007 Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. Paul, Rajat Kanti aut Lee, Kap-Ho aut Kim, Hai-Doo aut Enthalten in Journal of materials research Springer International Publishing, 1986 22(2007), 3 vom: März, Seite 615-620 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:22 year:2007 number:3 month:03 pages:615-620 https://doi.org/10.1557/jmr.2007.0070 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 22 2007 3 03 615-620 |
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10.1557/jmr.2007.0070 doi (DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Lee, Byong-Taek verfasserin aut Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2007 Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. Paul, Rajat Kanti aut Lee, Kap-Ho aut Kim, Hai-Doo aut Enthalten in Journal of materials research Springer International Publishing, 1986 22(2007), 3 vom: März, Seite 615-620 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:22 year:2007 number:3 month:03 pages:615-620 https://doi.org/10.1557/jmr.2007.0070 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 22 2007 3 03 615-620 |
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10.1557/jmr.2007.0070 doi (DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Lee, Byong-Taek verfasserin aut Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2007 Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. Paul, Rajat Kanti aut Lee, Kap-Ho aut Kim, Hai-Doo aut Enthalten in Journal of materials research Springer International Publishing, 1986 22(2007), 3 vom: März, Seite 615-620 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:22 year:2007 number:3 month:03 pages:615-620 https://doi.org/10.1557/jmr.2007.0070 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 22 2007 3 03 615-620 |
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Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder |
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(DE-627)OLC2123071412 (DE-He213)jmr.2007.0070-p |
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Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder |
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Lee, Byong-Taek |
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Journal of materials research |
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Journal of materials research |
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eng |
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600 - Technology |
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2007 |
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615 |
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Lee, Byong-Taek Paul, Rajat Kanti Lee, Kap-Ho Kim, Hai-Doo |
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22 |
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Lee, Byong-Taek |
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10.1557/jmr.2007.0070 |
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670 |
| title_sort |
synthesis of $ si_{2} $$ n_{2} $o nanowires in porous $ si_{2} $$ n_{2} $o–$ si_{3} $$ n_{4} $ substrate using si powder |
| title_auth |
Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder |
| abstract |
Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. © The Materials Research Society 2007 |
| abstractGer |
Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. © The Materials Research Society 2007 |
| abstract_unstemmed |
Abstract The formation of synthesized $ Si_{2} $$ N_{2} $O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the $ Si_{2} $$ N_{2} $O nanowires having a high aspect ratio of about 50–80 nm was found in the porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate to which 6 wt% C was added. The synthesized $ Si_{2} $$ N_{2} $O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of $ Si_{2} $$ N_{2} $O nanowires showed a strong, stable green emission at 540 nm. © The Materials Research Society 2007 |
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| title_short |
Synthesis of $ Si_{2} $$ N_{2} $O nanowires in porous $ Si_{2} $$ N_{2} $O–$ Si_{3} $$ N_{4} $ substrate using Si powder |
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https://doi.org/10.1557/jmr.2007.0070 |
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Paul, Rajat Kanti Lee, Kap-Ho Kim, Hai-Doo |
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