Nitrogen and vacancy clusters in ZnO
Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tuomisto, Filip [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Systematik: |
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| Anmerkung: |
© The Materials Research Society 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 28(2013), 15 vom: 01. Aug., Seite 1977-1983 |
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| Übergeordnetes Werk: |
volume:28 ; year:2013 ; number:15 ; day:01 ; month:08 ; pages:1977-1983 |
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| DOI / URN: |
10.1557/jmr.2013.195 |
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| 520 | |a Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. | ||
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10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
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10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
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10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
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10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
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10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
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Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
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Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
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Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
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Nitrogen and vacancy clusters in ZnO |
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Rauch, Christian Wagner, Markus R. Hoffmann, Axel Eisermann, Sebastian Meyer, Bruno K. Kilanski, Lukasz Tarun, Marianne C. McCluskey, Matthew D. |
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