Nitrogen and vacancy clusters in ZnO
Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated...
Ausführliche Beschreibung
Autor*in: |
Tuomisto, Filip [verfasserIn] |
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Artikel |
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Sprache: |
Englisch |
Erschienen: |
2013 |
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Anmerkung: |
© The Materials Research Society 2013 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Springer International Publishing, 1986, 28(2013), 15 vom: 01. Aug., Seite 1977-1983 |
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Übergeordnetes Werk: |
volume:28 ; year:2013 ; number:15 ; day:01 ; month:08 ; pages:1977-1983 |
Links: |
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DOI / URN: |
10.1557/jmr.2013.195 |
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Katalog-ID: |
OLC2123073199 |
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LEADER | 01000naa a22002652 4500 | ||
---|---|---|---|
001 | OLC2123073199 | ||
003 | DE-627 | ||
005 | 20230505071114.0 | ||
007 | tu | ||
008 | 230505s2013 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1557/jmr.2013.195 |2 doi | |
035 | |a (DE-627)OLC2123073199 | ||
035 | |a (DE-He213)jmr.2013.195-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 670 |q VZ |
084 | |a VA 5350 |q VZ |2 rvk | ||
100 | 1 | |a Tuomisto, Filip |e verfasserin |4 aut | |
245 | 1 | 0 | |a Nitrogen and vacancy clusters in ZnO |
264 | 1 | |c 2013 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © The Materials Research Society 2013 | ||
520 | |a Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. | ||
700 | 1 | |a Rauch, Christian |4 aut | |
700 | 1 | |a Wagner, Markus R. |4 aut | |
700 | 1 | |a Hoffmann, Axel |4 aut | |
700 | 1 | |a Eisermann, Sebastian |4 aut | |
700 | 1 | |a Meyer, Bruno K. |4 aut | |
700 | 1 | |a Kilanski, Lukasz |4 aut | |
700 | 1 | |a Tarun, Marianne C. |4 aut | |
700 | 1 | |a McCluskey, Matthew D. |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Journal of materials research |d Springer International Publishing, 1986 |g 28(2013), 15 vom: 01. Aug., Seite 1977-1983 |w (DE-627)129206288 |w (DE-600)54876-5 |w (DE-576)01445744X |x 0884-2914 |7 nnns |
773 | 1 | 8 | |g volume:28 |g year:2013 |g number:15 |g day:01 |g month:08 |g pages:1977-1983 |
856 | 4 | 1 | |u https://doi.org/10.1557/jmr.2013.195 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a GBV_ILN_21 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4319 | ||
912 | |a GBV_ILN_4323 | ||
936 | r | v | |a VA 5350 |
951 | |a AR | ||
952 | |d 28 |j 2013 |e 15 |b 01 |c 08 |h 1977-1983 |
author_variant |
f t ft c r cr m r w mr mrw a h ah s e se b k m bk bkm l k lk m c t mc mct m d m md mdm |
---|---|
matchkey_str |
article:08842914:2013----::irgnnvcnyl |
hierarchy_sort_str |
2013 |
publishDate |
2013 |
allfields |
10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
spelling |
10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
allfields_unstemmed |
10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
allfieldsGer |
10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
allfieldsSound |
10.1557/jmr.2013.195 doi (DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p DE-627 ger DE-627 rakwb eng 670 VZ VA 5350 VZ rvk Tuomisto, Filip verfasserin aut Nitrogen and vacancy clusters in ZnO 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Materials Research Society 2013 Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. Rauch, Christian aut Wagner, Markus R. aut Hoffmann, Axel aut Eisermann, Sebastian aut Meyer, Bruno K. aut Kilanski, Lukasz aut Tarun, Marianne C. aut McCluskey, Matthew D. aut Enthalten in Journal of materials research Springer International Publishing, 1986 28(2013), 15 vom: 01. Aug., Seite 1977-1983 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 https://doi.org/10.1557/jmr.2013.195 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 VA 5350 AR 28 2013 15 01 08 1977-1983 |
language |
English |
source |
Enthalten in Journal of materials research 28(2013), 15 vom: 01. Aug., Seite 1977-1983 volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 |
sourceStr |
Enthalten in Journal of materials research 28(2013), 15 vom: 01. Aug., Seite 1977-1983 volume:28 year:2013 number:15 day:01 month:08 pages:1977-1983 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
dewey-raw |
670 |
isfreeaccess_bool |
false |
container_title |
Journal of materials research |
authorswithroles_txt_mv |
Tuomisto, Filip @@aut@@ Rauch, Christian @@aut@@ Wagner, Markus R. @@aut@@ Hoffmann, Axel @@aut@@ Eisermann, Sebastian @@aut@@ Meyer, Bruno K. @@aut@@ Kilanski, Lukasz @@aut@@ Tarun, Marianne C. @@aut@@ McCluskey, Matthew D. @@aut@@ |
publishDateDaySort_date |
2013-08-01T00:00:00Z |
hierarchy_top_id |
129206288 |
dewey-sort |
3670 |
id |
OLC2123073199 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2123073199</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505071114.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230505s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/jmr.2013.195</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2123073199</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)jmr.2013.195-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5350</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tuomisto, Filip</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nitrogen and vacancy clusters in ZnO</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Materials Research Society 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rauch, Christian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wagner, Markus R.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hoffmann, Axel</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eisermann, Sebastian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meyer, Bruno K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kilanski, Lukasz</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tarun, Marianne C.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">McCluskey, Matthew D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Springer International Publishing, 1986</subfield><subfield code="g">28(2013), 15 vom: 01. Aug., Seite 1977-1983</subfield><subfield code="w">(DE-627)129206288</subfield><subfield code="w">(DE-600)54876-5</subfield><subfield code="w">(DE-576)01445744X</subfield><subfield code="x">0884-2914</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:28</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:15</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1977-1983</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1557/jmr.2013.195</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5350</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">28</subfield><subfield code="j">2013</subfield><subfield code="e">15</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">1977-1983</subfield></datafield></record></collection>
|
author |
Tuomisto, Filip |
spellingShingle |
Tuomisto, Filip ddc 670 rvk VA 5350 Nitrogen and vacancy clusters in ZnO |
authorStr |
Tuomisto, Filip |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129206288 |
format |
Article |
dewey-ones |
670 - Manufacturing |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0884-2914 |
topic_title |
670 VZ VA 5350 VZ rvk Nitrogen and vacancy clusters in ZnO |
topic |
ddc 670 rvk VA 5350 |
topic_unstemmed |
ddc 670 rvk VA 5350 |
topic_browse |
ddc 670 rvk VA 5350 |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Journal of materials research |
hierarchy_parent_id |
129206288 |
dewey-tens |
670 - Manufacturing |
hierarchy_top_title |
Journal of materials research |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X |
title |
Nitrogen and vacancy clusters in ZnO |
ctrlnum |
(DE-627)OLC2123073199 (DE-He213)jmr.2013.195-p |
title_full |
Nitrogen and vacancy clusters in ZnO |
author_sort |
Tuomisto, Filip |
journal |
Journal of materials research |
journalStr |
Journal of materials research |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology |
recordtype |
marc |
publishDateSort |
2013 |
contenttype_str_mv |
txt |
container_start_page |
1977 |
author_browse |
Tuomisto, Filip Rauch, Christian Wagner, Markus R. Hoffmann, Axel Eisermann, Sebastian Meyer, Bruno K. Kilanski, Lukasz Tarun, Marianne C. McCluskey, Matthew D. |
container_volume |
28 |
class |
670 VZ VA 5350 VZ rvk |
format_se |
Aufsätze |
author-letter |
Tuomisto, Filip |
doi_str_mv |
10.1557/jmr.2013.195 |
dewey-full |
670 |
title_sort |
nitrogen and vacancy clusters in zno |
title_auth |
Nitrogen and vacancy clusters in ZnO |
abstract |
Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
abstractGer |
Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
abstract_unstemmed |
Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities. © The Materials Research Society 2013 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_24 GBV_ILN_31 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4319 GBV_ILN_4323 |
container_issue |
15 |
title_short |
Nitrogen and vacancy clusters in ZnO |
url |
https://doi.org/10.1557/jmr.2013.195 |
remote_bool |
false |
author2 |
Rauch, Christian Wagner, Markus R. Hoffmann, Axel Eisermann, Sebastian Meyer, Bruno K. Kilanski, Lukasz Tarun, Marianne C. McCluskey, Matthew D. |
author2Str |
Rauch, Christian Wagner, Markus R. Hoffmann, Axel Eisermann, Sebastian Meyer, Bruno K. Kilanski, Lukasz Tarun, Marianne C. McCluskey, Matthew D. |
ppnlink |
129206288 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1557/jmr.2013.195 |
up_date |
2024-07-03T16:12:03.841Z |
_version_ |
1803574967108894720 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2123073199</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505071114.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230505s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/jmr.2013.195</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2123073199</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)jmr.2013.195-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5350</subfield><subfield code="q">VZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tuomisto, Filip</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nitrogen and vacancy clusters in ZnO</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Materials Research Society 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rauch, Christian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wagner, Markus R.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hoffmann, Axel</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eisermann, Sebastian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meyer, Bruno K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kilanski, Lukasz</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tarun, Marianne C.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">McCluskey, Matthew D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Springer International Publishing, 1986</subfield><subfield code="g">28(2013), 15 vom: 01. Aug., Seite 1977-1983</subfield><subfield code="w">(DE-627)129206288</subfield><subfield code="w">(DE-600)54876-5</subfield><subfield code="w">(DE-576)01445744X</subfield><subfield code="x">0884-2914</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:28</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:15</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1977-1983</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1557/jmr.2013.195</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5350</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">28</subfield><subfield code="j">2013</subfield><subfield code="e">15</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">1977-1983</subfield></datafield></record></collection>
|
score |
7.4006147 |