Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of therm...
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| Autor*in: |
Perevalov, T. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Anmerkung: |
© Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. |
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Enthalten in: Journal of experimental and theoretical physics - Pleiades Publishing, 1993, 131(2020), 6 vom: Dez., Seite 940-944 |
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volume:131 ; year:2020 ; number:6 ; month:12 ; pages:940-944 |
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| DOI / URN: |
10.1134/S1063776120110084 |
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OLC2123315281 |
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| 520 | |a Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. | ||
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| 700 | 1 | |a Prosvirin, I. P. |4 aut | |
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10.1134/S1063776120110084 doi (DE-627)OLC2123315281 (DE-He213)S1063776120110084-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Perevalov, T. V. verfasserin aut Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. Iskhakzai, R. M. Kh. aut Aliev, V. Sh. aut Gritsenko, V. A. aut Prosvirin, I. P. aut Enthalten in Journal of experimental and theoretical physics Pleiades Publishing, 1993 131(2020), 6 vom: Dez., Seite 940-944 (DE-627)131188410 (DE-600)1146369-7 (DE-576)032622368 1063-7761 nnns volume:131 year:2020 number:6 month:12 pages:940-944 https://doi.org/10.1134/S1063776120110084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY 33.00 VZ AR 131 2020 6 12 940-944 |
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10.1134/S1063776120110084 doi (DE-627)OLC2123315281 (DE-He213)S1063776120110084-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Perevalov, T. V. verfasserin aut Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. Iskhakzai, R. M. Kh. aut Aliev, V. Sh. aut Gritsenko, V. A. aut Prosvirin, I. P. aut Enthalten in Journal of experimental and theoretical physics Pleiades Publishing, 1993 131(2020), 6 vom: Dez., Seite 940-944 (DE-627)131188410 (DE-600)1146369-7 (DE-576)032622368 1063-7761 nnns volume:131 year:2020 number:6 month:12 pages:940-944 https://doi.org/10.1134/S1063776120110084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY 33.00 VZ AR 131 2020 6 12 940-944 |
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10.1134/S1063776120110084 doi (DE-627)OLC2123315281 (DE-He213)S1063776120110084-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Perevalov, T. V. verfasserin aut Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. Iskhakzai, R. M. Kh. aut Aliev, V. Sh. aut Gritsenko, V. A. aut Prosvirin, I. P. aut Enthalten in Journal of experimental and theoretical physics Pleiades Publishing, 1993 131(2020), 6 vom: Dez., Seite 940-944 (DE-627)131188410 (DE-600)1146369-7 (DE-576)032622368 1063-7761 nnns volume:131 year:2020 number:6 month:12 pages:940-944 https://doi.org/10.1134/S1063776120110084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY 33.00 VZ AR 131 2020 6 12 940-944 |
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10.1134/S1063776120110084 doi (DE-627)OLC2123315281 (DE-He213)S1063776120110084-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Perevalov, T. V. verfasserin aut Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. Iskhakzai, R. M. Kh. aut Aliev, V. Sh. aut Gritsenko, V. A. aut Prosvirin, I. P. aut Enthalten in Journal of experimental and theoretical physics Pleiades Publishing, 1993 131(2020), 6 vom: Dez., Seite 940-944 (DE-627)131188410 (DE-600)1146369-7 (DE-576)032622368 1063-7761 nnns volume:131 year:2020 number:6 month:12 pages:940-944 https://doi.org/10.1134/S1063776120110084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY 33.00 VZ AR 131 2020 6 12 940-944 |
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10.1134/S1063776120110084 doi (DE-627)OLC2123315281 (DE-He213)S1063776120110084-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Perevalov, T. V. verfasserin aut Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. Iskhakzai, R. M. Kh. aut Aliev, V. Sh. aut Gritsenko, V. A. aut Prosvirin, I. P. aut Enthalten in Journal of experimental and theoretical physics Pleiades Publishing, 1993 131(2020), 6 vom: Dez., Seite 940-944 (DE-627)131188410 (DE-600)1146369-7 (DE-576)032622368 1063-7761 nnns volume:131 year:2020 number:6 month:12 pages:940-944 https://doi.org/10.1134/S1063776120110084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY 33.00 VZ AR 131 2020 6 12 940-944 |
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Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma |
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Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. |
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Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. |
| abstract_unstemmed |
Abstract The silicon oxide thin films obtained by thermal $ SiO_{2} $ treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal $ SiO_{2} $, the more so the longer the treatment time. The atomic structure of the $ SiO_{x} $ < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell. © Pleiades Publishing, Inc. 2020. ISSN 1063-7761, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944. © Pleiades Publishing, Inc., 2020. Russian Text © The Author(s), 2020, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 158, No. 6, pp. 1083–1088. |
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Atomic and Electronic Structure of $ SiO_{x} $ Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma |
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Iskhakzai, R. M. Kh Aliev, V. Sh Gritsenko, V. A. Prosvirin, I. P. |
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