Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis
Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a hom...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Obregon, Ovier [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Academy of Sciences 2021 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Indian Academy of Sciences, 1979, 44(2021), 2 vom: 31. Mai |
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| Übergeordnetes Werk: |
volume:44 ; year:2021 ; number:2 ; day:31 ; month:05 |
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10.1007/s12034-021-02468-5 |
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| 520 | |a Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. | ||
| 650 | 4 | |a Plastic substrates | |
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| 700 | 1 | |a Domínguez, Miguel A |0 (orcid)0000-0002-3014-7236 |4 aut | |
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10.1007/s12034-021-02468-5 doi (DE-627)OLC2125805766 (DE-He213)s12034-021-02468-5-p DE-627 ger DE-627 rakwb eng 600 VZ Obregon, Ovier verfasserin aut Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2021 Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. Plastic substrates transparent devices MIS capacitors ultrasonic spray pyrolysis Luna-Lopez, José A aut Rosales, Pedro aut Moreno, Mario aut Orduña-Diaz, Abdu aut Domínguez, Miguel A (orcid)0000-0002-3014-7236 aut Enthalten in Bulletin of materials science Indian Academy of Sciences, 1979 44(2021), 2 vom: 31. Mai (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:44 year:2021 number:2 day:31 month:05 https://doi.org/10.1007/s12034-021-02468-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC AR 44 2021 2 31 05 |
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10.1007/s12034-021-02468-5 doi (DE-627)OLC2125805766 (DE-He213)s12034-021-02468-5-p DE-627 ger DE-627 rakwb eng 600 VZ Obregon, Ovier verfasserin aut Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2021 Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. Plastic substrates transparent devices MIS capacitors ultrasonic spray pyrolysis Luna-Lopez, José A aut Rosales, Pedro aut Moreno, Mario aut Orduña-Diaz, Abdu aut Domínguez, Miguel A (orcid)0000-0002-3014-7236 aut Enthalten in Bulletin of materials science Indian Academy of Sciences, 1979 44(2021), 2 vom: 31. Mai (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:44 year:2021 number:2 day:31 month:05 https://doi.org/10.1007/s12034-021-02468-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC AR 44 2021 2 31 05 |
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10.1007/s12034-021-02468-5 doi (DE-627)OLC2125805766 (DE-He213)s12034-021-02468-5-p DE-627 ger DE-627 rakwb eng 600 VZ Obregon, Ovier verfasserin aut Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2021 Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. Plastic substrates transparent devices MIS capacitors ultrasonic spray pyrolysis Luna-Lopez, José A aut Rosales, Pedro aut Moreno, Mario aut Orduña-Diaz, Abdu aut Domínguez, Miguel A (orcid)0000-0002-3014-7236 aut Enthalten in Bulletin of materials science Indian Academy of Sciences, 1979 44(2021), 2 vom: 31. Mai (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:44 year:2021 number:2 day:31 month:05 https://doi.org/10.1007/s12034-021-02468-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC AR 44 2021 2 31 05 |
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10.1007/s12034-021-02468-5 doi (DE-627)OLC2125805766 (DE-He213)s12034-021-02468-5-p DE-627 ger DE-627 rakwb eng 600 VZ Obregon, Ovier verfasserin aut Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2021 Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. Plastic substrates transparent devices MIS capacitors ultrasonic spray pyrolysis Luna-Lopez, José A aut Rosales, Pedro aut Moreno, Mario aut Orduña-Diaz, Abdu aut Domínguez, Miguel A (orcid)0000-0002-3014-7236 aut Enthalten in Bulletin of materials science Indian Academy of Sciences, 1979 44(2021), 2 vom: 31. Mai (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:44 year:2021 number:2 day:31 month:05 https://doi.org/10.1007/s12034-021-02468-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC AR 44 2021 2 31 05 |
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10.1007/s12034-021-02468-5 doi (DE-627)OLC2125805766 (DE-He213)s12034-021-02468-5-p DE-627 ger DE-627 rakwb eng 600 VZ Obregon, Ovier verfasserin aut Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2021 Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. Plastic substrates transparent devices MIS capacitors ultrasonic spray pyrolysis Luna-Lopez, José A aut Rosales, Pedro aut Moreno, Mario aut Orduña-Diaz, Abdu aut Domínguez, Miguel A (orcid)0000-0002-3014-7236 aut Enthalten in Bulletin of materials science Indian Academy of Sciences, 1979 44(2021), 2 vom: 31. Mai (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:44 year:2021 number:2 day:31 month:05 https://doi.org/10.1007/s12034-021-02468-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC AR 44 2021 2 31 05 |
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Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. © Indian Academy of Sciences 2021 |
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Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. © Indian Academy of Sciences 2021 |
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Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy. © Indian Academy of Sciences 2021 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2125805766</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505105427.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230505s2021 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12034-021-02468-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2125805766</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s12034-021-02468-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Obregon, Ovier</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Transparent MIS capacitors on plastic substrates fabricated by high-frequency ultrasonic spray pyrolysis</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Academy of Sciences 2021</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS) capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200°C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Plastic substrates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">transparent devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MIS capacitors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ultrasonic spray pyrolysis</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Luna-Lopez, José A</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosales, Pedro</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Moreno, Mario</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Orduña-Diaz, Abdu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Domínguez, Miguel A</subfield><subfield code="0">(orcid)0000-0002-3014-7236</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Bulletin of materials science</subfield><subfield code="d">Indian Academy of Sciences, 1979</subfield><subfield code="g">44(2021), 2 vom: 31. 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