Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework
Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical met...
Ausführliche Beschreibung
Autor*in: |
Ingle, Nikesh N. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 32(2021), 14 vom: Juli, Seite 18657-18668 |
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Übergeordnetes Werk: |
volume:32 ; year:2021 ; number:14 ; month:07 ; pages:18657-18668 |
Links: |
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DOI / URN: |
10.1007/s10854-021-06353-z |
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Katalog-ID: |
OLC2126812650 |
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10.1007/s10854-021-06353-z doi (DE-627)OLC2126812650 (DE-He213)s10854-021-06353-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ingle, Nikesh N. verfasserin aut Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. Shirsat, Sumedh aut Sayyad, Pasha aut Bodkhe, Gajanan aut Patil, Harshada aut Deshmukh, Megha aut Mahadik, Manasi aut Singh, Fouran aut Shirsat, Mahendra (orcid)0000-0002-4216-2919 aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 32(2021), 14 vom: Juli, Seite 18657-18668 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:32 year:2021 number:14 month:07 pages:18657-18668 https://doi.org/10.1007/s10854-021-06353-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 32 2021 14 07 18657-18668 |
spelling |
10.1007/s10854-021-06353-z doi (DE-627)OLC2126812650 (DE-He213)s10854-021-06353-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ingle, Nikesh N. verfasserin aut Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. Shirsat, Sumedh aut Sayyad, Pasha aut Bodkhe, Gajanan aut Patil, Harshada aut Deshmukh, Megha aut Mahadik, Manasi aut Singh, Fouran aut Shirsat, Mahendra (orcid)0000-0002-4216-2919 aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 32(2021), 14 vom: Juli, Seite 18657-18668 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:32 year:2021 number:14 month:07 pages:18657-18668 https://doi.org/10.1007/s10854-021-06353-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 32 2021 14 07 18657-18668 |
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10.1007/s10854-021-06353-z doi (DE-627)OLC2126812650 (DE-He213)s10854-021-06353-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ingle, Nikesh N. verfasserin aut Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. Shirsat, Sumedh aut Sayyad, Pasha aut Bodkhe, Gajanan aut Patil, Harshada aut Deshmukh, Megha aut Mahadik, Manasi aut Singh, Fouran aut Shirsat, Mahendra (orcid)0000-0002-4216-2919 aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 32(2021), 14 vom: Juli, Seite 18657-18668 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:32 year:2021 number:14 month:07 pages:18657-18668 https://doi.org/10.1007/s10854-021-06353-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 32 2021 14 07 18657-18668 |
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10.1007/s10854-021-06353-z doi (DE-627)OLC2126812650 (DE-He213)s10854-021-06353-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ingle, Nikesh N. verfasserin aut Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. Shirsat, Sumedh aut Sayyad, Pasha aut Bodkhe, Gajanan aut Patil, Harshada aut Deshmukh, Megha aut Mahadik, Manasi aut Singh, Fouran aut Shirsat, Mahendra (orcid)0000-0002-4216-2919 aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 32(2021), 14 vom: Juli, Seite 18657-18668 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:32 year:2021 number:14 month:07 pages:18657-18668 https://doi.org/10.1007/s10854-021-06353-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 32 2021 14 07 18657-18668 |
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10.1007/s10854-021-06353-z doi (DE-627)OLC2126812650 (DE-He213)s10854-021-06353-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ingle, Nikesh N. verfasserin aut Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework 2021 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. Shirsat, Sumedh aut Sayyad, Pasha aut Bodkhe, Gajanan aut Patil, Harshada aut Deshmukh, Megha aut Mahadik, Manasi aut Singh, Fouran aut Shirsat, Mahendra (orcid)0000-0002-4216-2919 aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 32(2021), 14 vom: Juli, Seite 18657-18668 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:32 year:2021 number:14 month:07 pages:18657-18668 https://doi.org/10.1007/s10854-021-06353-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_2004 GBV_ILN_2015 AR 32 2021 14 07 18657-18668 |
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Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. 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influence of swift heavy ion irradiation on sensing properties of nickel-(nrs-$ ni_{3} $$ hhtp_{2} $) metal-organic framework |
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Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework |
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Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
abstractGer |
Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
abstract_unstemmed |
Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-$ Ni_{3} $$ HHTP_{2} $ MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of $ Ni_{3} $$ HHTP_{2} $-MOF were synthesized by chemical method and exposed to $ C^{12+} $ ions irradiation with fluence 1 × $ 10^{11} $ ion/$ cm^{2} $ and 1 × $ 10^{12} $ ion/$ cm^{2} $. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc’s plot. The synthesized nanorods of $ Ni_{3} $$ HHTP_{2} $ MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/$ SiO_{2} $) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × $ 10^{11} $ ion/$ cm^{2} $), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm $ SO_{2} $ concentration at room temp (RT) with a lower detection limit of 0.625 ppm. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-$ Ni_{3} $$ HHTP_{2} $) metal-organic framework |
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