Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates
Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the conc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Grzesik, Z. [verfasserIn] |
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| Format: |
Artikel |
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| Erschienen: |
2015 |
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| Anmerkung: |
©2016 by De Gruyter |
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| Übergeordnetes Werk: |
Enthalten in: High temperature materials and processes - De Gruyter, 1984, 35(2015), 1 vom: 29. Jan., Seite 21-28 |
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| Übergeordnetes Werk: |
volume:35 ; year:2015 ; number:1 ; day:29 ; month:01 ; pages:21-28 |
| Links: |
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| DOI / URN: |
10.1515/htmp-2014-0152 |
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OLC2136084410 |
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| 520 | |a Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. | ||
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10.1515/htmp-2014-0152 doi (DE-627)OLC2136084410 (DE-B1597)htmp-2014-0152-p DE-627 ger DE-627 rakwb 620 660 670 VZ 670 VZ Grzesik, Z. verfasserin aut Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier ©2016 by De Gruyter Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. Poczekajlo, A. aut Smola, G. aut Mrowec, S. aut Enthalten in High temperature materials and processes De Gruyter, 1984 35(2015), 1 vom: 29. Jan., Seite 21-28 (DE-627)129165131 (DE-600)50365-4 (DE-576)014454718 0334-6455 nnns volume:35 year:2015 number:1 day:29 month:01 pages:21-28 https://doi.org/10.1515/htmp-2014-0152 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_70 GBV_ILN_267 GBV_ILN_4277 AR 35 2015 1 29 01 21-28 |
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10.1515/htmp-2014-0152 doi (DE-627)OLC2136084410 (DE-B1597)htmp-2014-0152-p DE-627 ger DE-627 rakwb 620 660 670 VZ 670 VZ Grzesik, Z. verfasserin aut Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier ©2016 by De Gruyter Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. Poczekajlo, A. aut Smola, G. aut Mrowec, S. aut Enthalten in High temperature materials and processes De Gruyter, 1984 35(2015), 1 vom: 29. Jan., Seite 21-28 (DE-627)129165131 (DE-600)50365-4 (DE-576)014454718 0334-6455 nnns volume:35 year:2015 number:1 day:29 month:01 pages:21-28 https://doi.org/10.1515/htmp-2014-0152 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_70 GBV_ILN_267 GBV_ILN_4277 AR 35 2015 1 29 01 21-28 |
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Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. ©2016 by De Gruyter |
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Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. ©2016 by De Gruyter |
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Abstract The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $. ©2016 by De Gruyter |
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It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered $ Co_{1-y} $S to form $ CoS_{2} $, as well as $ Ni_{1-y} $S to form $ NiS_{2} $.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Poczekajlo, A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smola, G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mrowec, S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">High temperature materials and processes</subfield><subfield code="d">De Gruyter, 1984</subfield><subfield code="g">35(2015), 1 vom: 29. 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