Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films

Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied fro...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Goswami, A. [verfasserIn] Koli, S. S.

Format:	Artikel

Erschienen:	1966

Anmerkung:	© 1946 – 2014: Verlag der Zeitschrift für Naturforschung

Übergeordnetes Werk:	Enthalten in: Zeitschrift für Naturforschung. A, Physical sciences - Verlag der Zeitschrift für Naturforschung, 1947, 21(1966), 9 vom: 01. Sept., Seite 1462-1467
Übergeordnetes Werk:	volume:21 ; year:1966 ; number:9 ; day:01 ; month:09 ; pages:1462-1467

Links:	Volltext

DOI / URN:	10.1515/zna-1966-0919

Katalog-ID:	OLC2137601222

Internformat


LEADER	01000naa a22002652 4500
001	OLC2137601222
003	DE-627
005	20230810082836.0
007	tu
008	230810s1966 xx \|\|\|\|\| 00\| \|\|und c
024	7		\|a 10.1515/zna-1966-0919 \|2 doi
035			\|a (DE-627)OLC2137601222
035			\|a (DE-B1597)zna-1966-0919-p
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 530 \|q VZ
100	1		\|a Goswami, A. \|e verfasserin \|4 aut
245	1	0	\|a Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
264		1	\|c 1966
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
500			\|a © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
520			\|a Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory.
700	1		\|a Koli, S. S. \|4 aut
773	0	8	\|i Enthalten in \|t Zeitschrift für Naturforschung. A, Physical sciences \|d Verlag der Zeitschrift für Naturforschung, 1947 \|g 21(1966), 9 vom: 01. Sept., Seite 1462-1467 \|w (DE-627)129307378 \|w (DE-600)124634-3 \|w (DE-576)01450491X \|x 0932-0784 \|7 nnns
773	1	8	\|g volume:21 \|g year:1966 \|g number:9 \|g day:01 \|g month:09 \|g pages:1462-1467
856	4	1	\|u https://doi.org/10.1515/zna-1966-0919 \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-PHY
912			\|a SSG-OLC-CHE
912			\|a SSG-OLC-MAT
912			\|a SSG-OLC-AST
912			\|a SSG-OLC-FOR
912			\|a SSG-OPC-FOR
912			\|a SSG-OPC-AST
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_30
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_47
912			\|a GBV_ILN_55
912			\|a GBV_ILN_59
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_105
912			\|a GBV_ILN_120
912			\|a GBV_ILN_121
912			\|a GBV_ILN_130
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_267
912			\|a GBV_ILN_285
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2012
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2016
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2066
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2185
912			\|a GBV_ILN_2192
912			\|a GBV_ILN_2221
912			\|a GBV_ILN_2237
912			\|a GBV_ILN_2279
912			\|a GBV_ILN_2409
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4027
912			\|a GBV_ILN_4028
912			\|a GBV_ILN_4029
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4082
912			\|a GBV_ILN_4103
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4116
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4155
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4302
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4309
912			\|a GBV_ILN_4310
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4314
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4316
912			\|a GBV_ILN_4317
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4321
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 21 \|j 1966 \|e 9 \|b 01 \|c 09 \|h 1462-1467

Indexfelder

author_variant	a g ag s s k ss ssk
matchkey_str	article:09320784:1966----::tdeosmcnutnpoeteolaslhda
hierarchy_sort_str	1966
publishDate	1966
allfields	10.1515/zna-1966-0919 doi (DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p DE-627 ger DE-627 rakwb 530 VZ Goswami, A. verfasserin aut Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films 1966 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. Koli, S. S. aut Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 21(1966), 9 vom: 01. Sept., Seite 1462-1467 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467 https://doi.org/10.1515/zna-1966-0919 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 21 1966 9 01 09 1462-1467
spelling	10.1515/zna-1966-0919 doi (DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p DE-627 ger DE-627 rakwb 530 VZ Goswami, A. verfasserin aut Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films 1966 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. Koli, S. S. aut Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 21(1966), 9 vom: 01. Sept., Seite 1462-1467 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467 https://doi.org/10.1515/zna-1966-0919 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 21 1966 9 01 09 1462-1467
allfields_unstemmed	10.1515/zna-1966-0919 doi (DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p DE-627 ger DE-627 rakwb 530 VZ Goswami, A. verfasserin aut Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films 1966 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. Koli, S. S. aut Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 21(1966), 9 vom: 01. Sept., Seite 1462-1467 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467 https://doi.org/10.1515/zna-1966-0919 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 21 1966 9 01 09 1462-1467
allfieldsGer	10.1515/zna-1966-0919 doi (DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p DE-627 ger DE-627 rakwb 530 VZ Goswami, A. verfasserin aut Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films 1966 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. Koli, S. S. aut Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 21(1966), 9 vom: 01. Sept., Seite 1462-1467 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467 https://doi.org/10.1515/zna-1966-0919 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 21 1966 9 01 09 1462-1467
allfieldsSound	10.1515/zna-1966-0919 doi (DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p DE-627 ger DE-627 rakwb 530 VZ Goswami, A. verfasserin aut Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films 1966 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. Koli, S. S. aut Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 21(1966), 9 vom: 01. Sept., Seite 1462-1467 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467 https://doi.org/10.1515/zna-1966-0919 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 21 1966 9 01 09 1462-1467
source	Enthalten in Zeitschrift für Naturforschung. A, Physical sciences 21(1966), 9 vom: 01. Sept., Seite 1462-1467 volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467
sourceStr	Enthalten in Zeitschrift für Naturforschung. A, Physical sciences 21(1966), 9 vom: 01. Sept., Seite 1462-1467 volume:21 year:1966 number:9 day:01 month:09 pages:1462-1467
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Zeitschrift für Naturforschung. A, Physical sciences
authorswithroles_txt_mv	Goswami, A. @@aut@@ Koli, S. S. @@aut@@
publishDateDaySort_date	1966-09-01T00:00:00Z
hierarchy_top_id	129307378
dewey-sort	3530
id	OLC2137601222
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2137601222</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230810082836.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230810s1966 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/zna-1966-0919</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2137601222</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-B1597)zna-1966-0919-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Goswami, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1966</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© 1946 – 2014: Verlag der Zeitschrift für Naturforschung</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Koli, S. S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Zeitschrift für Naturforschung. A, Physical sciences</subfield><subfield code="d">Verlag der Zeitschrift für Naturforschung, 1947</subfield><subfield code="g">21(1966), 9 vom: 01. Sept., Seite 1462-1467</subfield><subfield code="w">(DE-627)129307378</subfield><subfield code="w">(DE-600)124634-3</subfield><subfield code="w">(DE-576)01450491X</subfield><subfield code="x">0932-0784</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:1966</subfield><subfield code="g">number:9</subfield><subfield code="g">day:01</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1462-1467</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1515/zna-1966-0919</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-AST</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-FOR</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-FOR</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-AST</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_47</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_121</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2066</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2221</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2237</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4028</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4029</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4103</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4155</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4302</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4321</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">1966</subfield><subfield code="e">9</subfield><subfield code="b">01</subfield><subfield code="c">09</subfield><subfield code="h">1462-1467</subfield></datafield></record></collection>
author	Goswami, A.
spellingShingle	Goswami, A. ddc 530 Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
authorStr	Goswami, A.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129307378
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0932-0784
topic_title	530 VZ Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
topic	ddc 530
topic_unstemmed	ddc 530
topic_browse	ddc 530
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
hierarchy_parent_title	Zeitschrift für Naturforschung. A, Physical sciences
hierarchy_parent_id	129307378
dewey-tens	530 - Physics
hierarchy_top_title	Zeitschrift für Naturforschung. A, Physical sciences
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X
title	Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
ctrlnum	(DE-627)OLC2137601222 (DE-B1597)zna-1966-0919-p
title_full	Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
author_sort	Goswami, A.
journal	Zeitschrift für Naturforschung. A, Physical sciences
journalStr	Zeitschrift für Naturforschung. A, Physical sciences
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	1966
contenttype_str_mv	txt
container_start_page	1462
author_browse	Goswami, A. Koli, S. S.
container_volume	21
class	530 VZ
format_se	Aufsätze
author-letter	Goswami, A.
doi_str_mv	10.1515/zna-1966-0919
dewey-full	530
title_sort	studies on semiconducting properties of lead sulphide and lead selenide films
title_auth	Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
abstract	Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
abstractGer	Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
abstract_unstemmed	Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2002 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2066 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4251 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700
container_issue	9
title_short	Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films
url	https://doi.org/10.1515/zna-1966-0919
remote_bool	false
author2	Koli, S. S.
author2Str	Koli, S. S.
ppnlink	129307378
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1515/zna-1966-0919
up_date	2024-07-03T13:36:29.334Z
_version_	1803565179165736960
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2137601222</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230810082836.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">230810s1966 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/zna-1966-0919</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2137601222</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-B1597)zna-1966-0919-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Goswami, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1966</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© 1946 – 2014: Verlag der Zeitschrift für Naturforschung</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient ($ R_{H} $) , mean free path ($ l_{0} $), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Koli, S. S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Zeitschrift für Naturforschung. A, Physical sciences</subfield><subfield code="d">Verlag der Zeitschrift für Naturforschung, 1947</subfield><subfield code="g">21(1966), 9 vom: 01. Sept., Seite 1462-1467</subfield><subfield code="w">(DE-627)129307378</subfield><subfield code="w">(DE-600)124634-3</subfield><subfield code="w">(DE-576)01450491X</subfield><subfield code="x">0932-0784</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:1966</subfield><subfield code="g">number:9</subfield><subfield code="g">day:01</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1462-1467</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1515/zna-1966-0919</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-AST</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-FOR</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-FOR</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-AST</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_47</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_121</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2066</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2221</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2237</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4028</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4029</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4103</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4155</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4302</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4321</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">1966</subfield><subfield code="e">9</subfield><subfield code="b">01</subfield><subfield code="c">09</subfield><subfield code="h">1462-1467</subfield></datafield></record></collection>
score	7.399107

Nicht das Richtige dabei?

Schreiben Sie uns!

Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?