Do Free Carriers Influence Polariton Scattering Intensities in GaAs?

An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Claus, R. [verfasserIn]

Format:	Artikel

Erschienen:	1978

Anmerkung:	© 1946 – 2014: Verlag der Zeitschrift für Naturforschung

Übergeordnetes Werk:	Enthalten in: Zeitschrift für Naturforschung. A, Physical sciences - Verlag der Zeitschrift für Naturforschung, 1947, 33(1978), 2 vom: 01. Feb., Seite 231-231
Übergeordnetes Werk:	volume:33 ; year:1978 ; number:2 ; day:01 ; month:02 ; pages:231-231

Links:	Volltext

DOI / URN:	10.1515/zna-1978-0223

Katalog-ID:	OLC2140418263

Internformat


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520			\|a An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities.
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matchkey_str	article:09320784:1978----::orearesnlecplrtncteig
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publishDate	1978
allfields	10.1515/zna-1978-0223 doi (DE-627)OLC2140418263 (DE-B1597)zna-1978-0223-p DE-627 ger DE-627 rakwb 530 VZ Claus, R. verfasserin aut Do Free Carriers Influence Polariton Scattering Intensities in GaAs? 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 33(1978), 2 vom: 01. Feb., Seite 231-231 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:33 year:1978 number:2 day:01 month:02 pages:231-231 https://doi.org/10.1515/zna-1978-0223 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 33 1978 2 01 02 231-231
spelling	10.1515/zna-1978-0223 doi (DE-627)OLC2140418263 (DE-B1597)zna-1978-0223-p DE-627 ger DE-627 rakwb 530 VZ Claus, R. verfasserin aut Do Free Carriers Influence Polariton Scattering Intensities in GaAs? 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 33(1978), 2 vom: 01. Feb., Seite 231-231 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:33 year:1978 number:2 day:01 month:02 pages:231-231 https://doi.org/10.1515/zna-1978-0223 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 33 1978 2 01 02 231-231
allfields_unstemmed	10.1515/zna-1978-0223 doi (DE-627)OLC2140418263 (DE-B1597)zna-1978-0223-p DE-627 ger DE-627 rakwb 530 VZ Claus, R. verfasserin aut Do Free Carriers Influence Polariton Scattering Intensities in GaAs? 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 33(1978), 2 vom: 01. Feb., Seite 231-231 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:33 year:1978 number:2 day:01 month:02 pages:231-231 https://doi.org/10.1515/zna-1978-0223 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 33 1978 2 01 02 231-231
allfieldsGer	10.1515/zna-1978-0223 doi (DE-627)OLC2140418263 (DE-B1597)zna-1978-0223-p DE-627 ger DE-627 rakwb 530 VZ Claus, R. verfasserin aut Do Free Carriers Influence Polariton Scattering Intensities in GaAs? 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 33(1978), 2 vom: 01. Feb., Seite 231-231 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:33 year:1978 number:2 day:01 month:02 pages:231-231 https://doi.org/10.1515/zna-1978-0223 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 33 1978 2 01 02 231-231
allfieldsSound	10.1515/zna-1978-0223 doi (DE-627)OLC2140418263 (DE-B1597)zna-1978-0223-p DE-627 ger DE-627 rakwb 530 VZ Claus, R. verfasserin aut Do Free Carriers Influence Polariton Scattering Intensities in GaAs? 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © 1946 – 2014: Verlag der Zeitschrift für Naturforschung An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. Enthalten in Zeitschrift für Naturforschung. A, Physical sciences Verlag der Zeitschrift für Naturforschung, 1947 33(1978), 2 vom: 01. Feb., Seite 231-231 (DE-627)129307378 (DE-600)124634-3 (DE-576)01450491X 0932-0784 nnns volume:33 year:1978 number:2 day:01 month:02 pages:231-231 https://doi.org/10.1515/zna-1978-0223 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-MAT SSG-OLC-AST SSG-OLC-FOR SSG-OPC-FOR SSG-OPC-AST GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_120 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_267 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2110 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2237 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4027 GBV_ILN_4028 GBV_ILN_4029 GBV_ILN_4035 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4321 GBV_ILN_4323 GBV_ILN_4700 AR 33 1978 2 01 02 231-231
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author	Claus, R.
spellingShingle	Claus, R. ddc 530 Do Free Carriers Influence Polariton Scattering Intensities in GaAs?
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title	Do Free Carriers Influence Polariton Scattering Intensities in GaAs?
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title_full	Do Free Carriers Influence Polariton Scattering Intensities in GaAs?
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title_sort	do free carriers influence polariton scattering intensities in gaas?
title_auth	Do Free Carriers Influence Polariton Scattering Intensities in GaAs?
abstract	An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
abstractGer	An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
abstract_unstemmed	An influence of free carriers in GaAs on polariton scattering intensities is shown to take place due to two mechanismus: a) The altered LO-phonon frequency changes the electrooptic coefficient and b) the macroscopic electric field becomes changed. Both quantities influence the scattering intensities. © 1946 – 2014: Verlag der Zeitschrift für Naturforschung
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title_short	Do Free Carriers Influence Polariton Scattering Intensities in GaAs?
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