Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mochalov, Leonid [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2023 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
|---|
| Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Springer US, 1975, 55(2023), 10 vom: 02. Aug. |
|---|---|
| Übergeordnetes Werk: |
volume:55 ; year:2023 ; number:10 ; day:02 ; month:08 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11082-023-05165-1 |
|---|
| Katalog-ID: |
OLC2144815046 |
|---|
| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2144815046 | ||
| 003 | DE-627 | ||
| 005 | 20240118102826.0 | ||
| 007 | tu | ||
| 008 | 240118s2023 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s11082-023-05165-1 |2 doi | |
| 035 | |a (DE-627)OLC2144815046 | ||
| 035 | |a (DE-He213)s11082-023-05165-1-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 500 |a 620 |q VZ |
| 100 | 1 | |a Mochalov, Leonid |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| 264 | 1 | |c 2023 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. | ||
| 520 | |a Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). | ||
| 650 | 4 | |a Thin films | |
| 650 | 4 | |a Gallium sulfide | |
| 650 | 4 | |a PECVD | |
| 700 | 1 | |a Kudryashov, Mikhail |4 aut | |
| 700 | 1 | |a Vshivtsev, Maksim |4 aut | |
| 700 | 1 | |a Prokhorov, Igor |4 aut | |
| 700 | 1 | |a Kudryashova, Yuliya |4 aut | |
| 700 | 1 | |a Mosyagin, Pavel |4 aut | |
| 700 | 1 | |a Slapovskaya, Ekaterina |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Optical and quantum electronics |d Springer US, 1975 |g 55(2023), 10 vom: 02. Aug. |w (DE-627)129419540 |w (DE-600)189950-8 |w (DE-576)014796139 |x 0306-8919 |7 nnns |
| 773 | 1 | 8 | |g volume:55 |g year:2023 |g number:10 |g day:02 |g month:08 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s11082-023-05165-1 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 951 | |a AR | ||
| 952 | |d 55 |j 2023 |e 10 |b 02 |c 08 | ||
| author_variant |
l m lm m k mk m v mv i p ip y k yk p m pm e s es |
|---|---|
| matchkey_str |
article:03068919:2023----::lsanacdhmclaodpstoog_s1tiflstut |
| hierarchy_sort_str |
2023 |
| publishDate |
2023 |
| allfields |
10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
| spelling |
10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
| allfields_unstemmed |
10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
| allfieldsGer |
10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
| allfieldsSound |
10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
| language |
English |
| source |
Enthalten in Optical and quantum electronics 55(2023), 10 vom: 02. Aug. volume:55 year:2023 number:10 day:02 month:08 |
| sourceStr |
Enthalten in Optical and quantum electronics 55(2023), 10 vom: 02. Aug. volume:55 year:2023 number:10 day:02 month:08 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Thin films Gallium sulfide PECVD |
| dewey-raw |
500 |
| isfreeaccess_bool |
false |
| container_title |
Optical and quantum electronics |
| authorswithroles_txt_mv |
Mochalov, Leonid @@aut@@ Kudryashov, Mikhail @@aut@@ Vshivtsev, Maksim @@aut@@ Prokhorov, Igor @@aut@@ Kudryashova, Yuliya @@aut@@ Mosyagin, Pavel @@aut@@ Slapovskaya, Ekaterina @@aut@@ |
| publishDateDaySort_date |
2023-08-02T00:00:00Z |
| hierarchy_top_id |
129419540 |
| dewey-sort |
3500 |
| id |
OLC2144815046 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2144815046</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240118102826.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">240118s2023 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11082-023-05165-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2144815046</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11082-023-05165-1-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">500</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mochalov, Leonid</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%).</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium sulfide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PECVD</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kudryashov, Mikhail</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vshivtsev, Maksim</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Prokhorov, Igor</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kudryashova, Yuliya</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mosyagin, Pavel</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slapovskaya, Ekaterina</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Optical and quantum electronics</subfield><subfield code="d">Springer US, 1975</subfield><subfield code="g">55(2023), 10 vom: 02. Aug.</subfield><subfield code="w">(DE-627)129419540</subfield><subfield code="w">(DE-600)189950-8</subfield><subfield code="w">(DE-576)014796139</subfield><subfield code="x">0306-8919</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:55</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:10</subfield><subfield code="g">day:02</subfield><subfield code="g">month:08</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11082-023-05165-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">55</subfield><subfield code="j">2023</subfield><subfield code="e">10</subfield><subfield code="b">02</subfield><subfield code="c">08</subfield></datafield></record></collection>
|
| author |
Mochalov, Leonid |
| spellingShingle |
Mochalov, Leonid ddc 500 misc Thin films misc Gallium sulfide misc PECVD Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| authorStr |
Mochalov, Leonid |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129419540 |
| format |
Article |
| dewey-ones |
500 - Natural sciences & mathematics 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0306-8919 |
| topic_title |
500 620 VZ Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties Thin films Gallium sulfide PECVD |
| topic |
ddc 500 misc Thin films misc Gallium sulfide misc PECVD |
| topic_unstemmed |
ddc 500 misc Thin films misc Gallium sulfide misc PECVD |
| topic_browse |
ddc 500 misc Thin films misc Gallium sulfide misc PECVD |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Optical and quantum electronics |
| hierarchy_parent_id |
129419540 |
| dewey-tens |
500 - Science 620 - Engineering |
| hierarchy_top_title |
Optical and quantum electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 |
| title |
Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| ctrlnum |
(DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p |
| title_full |
Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| author_sort |
Mochalov, Leonid |
| journal |
Optical and quantum electronics |
| journalStr |
Optical and quantum electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2023 |
| contenttype_str_mv |
txt |
| author_browse |
Mochalov, Leonid Kudryashov, Mikhail Vshivtsev, Maksim Prokhorov, Igor Kudryashova, Yuliya Mosyagin, Pavel Slapovskaya, Ekaterina |
| container_volume |
55 |
| class |
500 620 VZ |
| format_se |
Aufsätze |
| author-letter |
Mochalov, Leonid |
| doi_str_mv |
10.1007/s11082-023-05165-1 |
| dewey-full |
500 620 |
| title_sort |
plasma-enhanced chemical vapor deposition of $ ga_{x} $$ s_{1−x} $ thin films: structural and optical properties |
| title_auth |
Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| abstract |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstractGer |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstract_unstemmed |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY |
| container_issue |
10 |
| title_short |
Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
| url |
https://doi.org/10.1007/s11082-023-05165-1 |
| remote_bool |
false |
| author2 |
Kudryashov, Mikhail Vshivtsev, Maksim Prokhorov, Igor Kudryashova, Yuliya Mosyagin, Pavel Slapovskaya, Ekaterina |
| author2Str |
Kudryashov, Mikhail Vshivtsev, Maksim Prokhorov, Igor Kudryashova, Yuliya Mosyagin, Pavel Slapovskaya, Ekaterina |
| ppnlink |
129419540 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11082-023-05165-1 |
| up_date |
2024-07-04T00:33:29.391Z |
| _version_ |
1803606514092474368 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">OLC2144815046</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240118102826.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">240118s2023 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11082-023-05165-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2144815046</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11082-023-05165-1-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">500</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mochalov, Leonid</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%).</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium sulfide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PECVD</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kudryashov, Mikhail</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vshivtsev, Maksim</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Prokhorov, Igor</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kudryashova, Yuliya</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mosyagin, Pavel</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slapovskaya, Ekaterina</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Optical and quantum electronics</subfield><subfield code="d">Springer US, 1975</subfield><subfield code="g">55(2023), 10 vom: 02. Aug.</subfield><subfield code="w">(DE-627)129419540</subfield><subfield code="w">(DE-600)189950-8</subfield><subfield code="w">(DE-576)014796139</subfield><subfield code="x">0306-8919</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:55</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:10</subfield><subfield code="g">day:02</subfield><subfield code="g">month:08</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11082-023-05165-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">55</subfield><subfield code="j">2023</subfield><subfield code="e">10</subfield><subfield code="b">02</subfield><subfield code="c">08</subfield></datafield></record></collection>
|
| score |
7.3995066 |