Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first...
Ausführliche Beschreibung
Autor*in: |
Mochalov, Leonid [verfasserIn] |
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Sprache: |
Englisch |
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2023 |
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Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Springer US, 1975, 55(2023), 10 vom: 02. Aug. |
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Übergeordnetes Werk: |
volume:55 ; year:2023 ; number:10 ; day:02 ; month:08 |
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DOI / URN: |
10.1007/s11082-023-05165-1 |
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Katalog-ID: |
OLC2144815046 |
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520 | |a Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). | ||
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10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
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10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
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10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
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10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
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10.1007/s11082-023-05165-1 doi (DE-627)OLC2144815046 (DE-He213)s11082-023-05165-1-p DE-627 ger DE-627 rakwb eng 500 620 VZ Mochalov, Leonid verfasserin aut Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties 2023 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). Thin films Gallium sulfide PECVD Kudryashov, Mikhail aut Vshivtsev, Maksim aut Prokhorov, Igor aut Kudryashova, Yuliya aut Mosyagin, Pavel aut Slapovskaya, Ekaterina aut Enthalten in Optical and quantum electronics Springer US, 1975 55(2023), 10 vom: 02. Aug. (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:55 year:2023 number:10 day:02 month:08 https://doi.org/10.1007/s11082-023-05165-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY AR 55 2023 10 02 08 |
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Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
abstract |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
abstractGer |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
abstract_unstemmed |
Abstract Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide $ Ga_{x} $$ S_{1−x} $ were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. $ Ga_{x} $$ S_{1−x} $ films have sufficiently high transparency in the visible and near-IR ranges (up to 70%). © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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container_issue |
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title_short |
Plasma-enhanced chemical vapor deposition of $ Ga_{x} $$ S_{1−x} $ thin films: structural and optical properties |
url |
https://doi.org/10.1007/s11082-023-05165-1 |
remote_bool |
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author2 |
Kudryashov, Mikhail Vshivtsev, Maksim Prokhorov, Igor Kudryashova, Yuliya Mosyagin, Pavel Slapovskaya, Ekaterina |
author2Str |
Kudryashov, Mikhail Vshivtsev, Maksim Prokhorov, Igor Kudryashova, Yuliya Mosyagin, Pavel Slapovskaya, Ekaterina |
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doi_str |
10.1007/s11082-023-05165-1 |
up_date |
2024-07-04T00:33:29.391Z |
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