A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror
Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in posit...
Ausführliche Beschreibung
Autor*in: |
Monfaredi, Khalil [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2011 |
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Schlagwörter: |
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Anmerkung: |
© Springer Science+Business Media, LLC 2011 |
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Übergeordnetes Werk: |
Enthalten in: Circuits, systems and signal processing - Boston, Mass. : Birkhäuser, 1982, 31(2011), 3 vom: 08. Sept., Seite 833-847 |
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Übergeordnetes Werk: |
volume:31 ; year:2011 ; number:3 ; day:08 ; month:09 ; pages:833-847 |
Links: |
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DOI / URN: |
10.1007/s00034-011-9352-3 |
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Katalog-ID: |
SPR000494100 |
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245 | 1 | 2 | |a A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
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520 | |a Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. | ||
650 | 4 | |a Current mirror |7 (dpeaa)DE-He213 | |
650 | 4 | |a Femto-ampere |7 (dpeaa)DE-He213 | |
650 | 4 | |a Ultra-low power |7 (dpeaa)DE-He213 | |
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650 | 4 | |a Current mode |7 (dpeaa)DE-He213 | |
700 | 1 | |a Baghtash, Hassan Faraji |4 aut | |
700 | 1 | |a Azhari, Seyed Javad |4 aut | |
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2011 |
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2011 |
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10.1007/s00034-011-9352-3 doi (DE-627)SPR000494100 (SPR)s00034-011-9352-3-e DE-627 ger DE-627 rakwb eng Monfaredi, Khalil verfasserin aut A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2011 Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 Baghtash, Hassan Faraji aut Azhari, Seyed Javad aut Enthalten in Circuits, systems and signal processing Boston, Mass. : Birkhäuser, 1982 31(2011), 3 vom: 08. Sept., Seite 833-847 (DE-627)351975470 (DE-600)2085136-4 1531-5878 nnns volume:31 year:2011 number:3 day:08 month:09 pages:833-847 https://dx.doi.org/10.1007/s00034-011-9352-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 31 2011 3 08 09 833-847 |
spelling |
10.1007/s00034-011-9352-3 doi (DE-627)SPR000494100 (SPR)s00034-011-9352-3-e DE-627 ger DE-627 rakwb eng Monfaredi, Khalil verfasserin aut A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2011 Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 Baghtash, Hassan Faraji aut Azhari, Seyed Javad aut Enthalten in Circuits, systems and signal processing Boston, Mass. : Birkhäuser, 1982 31(2011), 3 vom: 08. Sept., Seite 833-847 (DE-627)351975470 (DE-600)2085136-4 1531-5878 nnns volume:31 year:2011 number:3 day:08 month:09 pages:833-847 https://dx.doi.org/10.1007/s00034-011-9352-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 31 2011 3 08 09 833-847 |
allfields_unstemmed |
10.1007/s00034-011-9352-3 doi (DE-627)SPR000494100 (SPR)s00034-011-9352-3-e DE-627 ger DE-627 rakwb eng Monfaredi, Khalil verfasserin aut A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2011 Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 Baghtash, Hassan Faraji aut Azhari, Seyed Javad aut Enthalten in Circuits, systems and signal processing Boston, Mass. : Birkhäuser, 1982 31(2011), 3 vom: 08. Sept., Seite 833-847 (DE-627)351975470 (DE-600)2085136-4 1531-5878 nnns volume:31 year:2011 number:3 day:08 month:09 pages:833-847 https://dx.doi.org/10.1007/s00034-011-9352-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 31 2011 3 08 09 833-847 |
allfieldsGer |
10.1007/s00034-011-9352-3 doi (DE-627)SPR000494100 (SPR)s00034-011-9352-3-e DE-627 ger DE-627 rakwb eng Monfaredi, Khalil verfasserin aut A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2011 Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 Baghtash, Hassan Faraji aut Azhari, Seyed Javad aut Enthalten in Circuits, systems and signal processing Boston, Mass. : Birkhäuser, 1982 31(2011), 3 vom: 08. Sept., Seite 833-847 (DE-627)351975470 (DE-600)2085136-4 1531-5878 nnns volume:31 year:2011 number:3 day:08 month:09 pages:833-847 https://dx.doi.org/10.1007/s00034-011-9352-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 31 2011 3 08 09 833-847 |
allfieldsSound |
10.1007/s00034-011-9352-3 doi (DE-627)SPR000494100 (SPR)s00034-011-9352-3-e DE-627 ger DE-627 rakwb eng Monfaredi, Khalil verfasserin aut A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2011 Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 Baghtash, Hassan Faraji aut Azhari, Seyed Javad aut Enthalten in Circuits, systems and signal processing Boston, Mass. : Birkhäuser, 1982 31(2011), 3 vom: 08. Sept., Seite 833-847 (DE-627)351975470 (DE-600)2085136-4 1531-5878 nnns volume:31 year:2011 number:3 day:08 month:09 pages:833-847 https://dx.doi.org/10.1007/s00034-011-9352-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 31 2011 3 08 09 833-847 |
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Enthalten in Circuits, systems and signal processing 31(2011), 3 vom: 08. Sept., Seite 833-847 volume:31 year:2011 number:3 day:08 month:09 pages:833-847 |
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Enthalten in Circuits, systems and signal processing 31(2011), 3 vom: 08. Sept., Seite 833-847 volume:31 year:2011 number:3 day:08 month:09 pages:833-847 |
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Circuits, systems and signal processing |
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Monfaredi, Khalil @@aut@@ Baghtash, Hassan Faraji @@aut@@ Azhari, Seyed Javad @@aut@@ |
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It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. 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Monfaredi, Khalil |
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Monfaredi, Khalil misc Current mirror misc Femto-ampere misc Ultra-low power misc Low voltage misc Current mode A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
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A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror Current mirror (dpeaa)DE-He213 Femto-ampere (dpeaa)DE-He213 Ultra-low power (dpeaa)DE-He213 Low voltage (dpeaa)DE-He213 Current mode (dpeaa)DE-He213 |
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A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
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A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
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Monfaredi, Khalil Baghtash, Hassan Faraji Azhari, Seyed Javad |
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10.1007/s00034-011-9352-3 |
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novel ultra-low-power low-voltage femto-ampère current mirror |
title_auth |
A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
abstract |
Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. © Springer Science+Business Media, LLC 2011 |
abstractGer |
Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. © Springer Science+Business Media, LLC 2011 |
abstract_unstemmed |
Abstract A novel femto-ampère current mirror/negative impedance converter (FACMNIC) is proposed in this paper. It is shown that extremely large output impedance approaching infinite value and also negative impedances of different values can be remarkably obtained just by adjusting the built-in positive feedback loop gain. Operation of this circuit is based on two approaches called here as source voltage shifting and channel conduction manipulation. Although those two techniques are briefly explained in this paper but due to their strong action worth extensively studying and exercising. Deliberately having been composed of both current mirror and negative impedance converter capabilities in the same structure causes the proposed circuit to have a simple structure prohibiting large chip area consumption while favorably preserves following unique features. At 0.9 volt power supply it produces very small currents down to 4.6 fA and consumes an ultra-low power of 86 nW, thus it is the best choice for Ultra-Low-Power Low-Voltage (ULPLV) applications. It also exhibits the outstanding high output impedance of 400 GΩ when it is optimized for best performance operation, otherwise it can be adjusted so as to produce very high output impedances (approaching infinite values). Due to the inclusion of positive feedback, Monte Carlo analyses are performed to ensure the stability and robustness of the circuit’s operation in the presence of the PVT (process, voltage and temperature) variations. Simulation results in TSMC 0.18 μm CMOS technology with HSPICE are presented to demonstrate the validation of the proposed current mirror. © Springer Science+Business Media, LLC 2011 |
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container_issue |
3 |
title_short |
A Novel Ultra-Low-Power Low-Voltage Femto-Ampère Current Mirror |
url |
https://dx.doi.org/10.1007/s00034-011-9352-3 |
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author2 |
Baghtash, Hassan Faraji Azhari, Seyed Javad |
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Baghtash, Hassan Faraji Azhari, Seyed Javad |
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doi_str |
10.1007/s00034-011-9352-3 |
up_date |
2024-07-03T16:27:02.647Z |
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score |
7.4006615 |