$ C_{60} $-containing polymers for electron beam lithography

Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers w...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Okamura, Haruyuki [verfasserIn] Forman, Drew C. Ober, Christopher K.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	Electron beam lithography C Poly( -chloromethylstyrene)

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2014

Übergeordnetes Werk:	Enthalten in: Polymer bulletin - Berlin : Springer, 1978, 71(2014), 9 vom: 25. Juni, Seite 2395-2405
Übergeordnetes Werk:	volume:71 ; year:2014 ; number:9 ; day:25 ; month:06 ; pages:2395-2405

Links:	Volltext

DOI / URN:	10.1007/s00289-014-1197-z

Katalog-ID:	SPR003756637

Internformat


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520			\|a Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene.
650		4	\|a Electron beam lithography \|7 (dpeaa)DE-He213
650		4	\|a C \|7 (dpeaa)DE-He213
650		4	\|a Poly( \|7 (dpeaa)DE-He213
650		4	\|a -chloromethylstyrene) \|7 (dpeaa)DE-He213
700	1		\|a Forman, Drew C. \|4 aut
700	1		\|a Ober, Christopher K. \|4 aut
773	0	8	\|i Enthalten in \|t Polymer bulletin \|d Berlin : Springer, 1978 \|g 71(2014), 9 vom: 25. Juni, Seite 2395-2405 \|w (DE-627)268761833 \|w (DE-600)1473175-7 \|x 1436-2449 \|7 nnns
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912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2411
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
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Indexfelder

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matchkey_str	article:14362449:2014----::_0otiigoyesoeetoba
hierarchy_sort_str	2014
publishDate	2014
allfields	10.1007/s00289-014-1197-z doi (DE-627)SPR003756637 (SPR)s00289-014-1197-z-e DE-627 ger DE-627 rakwb eng Okamura, Haruyuki verfasserin aut $ C_{60} $-containing polymers for electron beam lithography 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213 Forman, Drew C. aut Ober, Christopher K. aut Enthalten in Polymer bulletin Berlin : Springer, 1978 71(2014), 9 vom: 25. Juni, Seite 2395-2405 (DE-627)268761833 (DE-600)1473175-7 1436-2449 nnns volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405 https://dx.doi.org/10.1007/s00289-014-1197-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2411 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 71 2014 9 25 06 2395-2405
spelling	10.1007/s00289-014-1197-z doi (DE-627)SPR003756637 (SPR)s00289-014-1197-z-e DE-627 ger DE-627 rakwb eng Okamura, Haruyuki verfasserin aut $ C_{60} $-containing polymers for electron beam lithography 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213 Forman, Drew C. aut Ober, Christopher K. aut Enthalten in Polymer bulletin Berlin : Springer, 1978 71(2014), 9 vom: 25. Juni, Seite 2395-2405 (DE-627)268761833 (DE-600)1473175-7 1436-2449 nnns volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405 https://dx.doi.org/10.1007/s00289-014-1197-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2411 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 71 2014 9 25 06 2395-2405
allfields_unstemmed	10.1007/s00289-014-1197-z doi (DE-627)SPR003756637 (SPR)s00289-014-1197-z-e DE-627 ger DE-627 rakwb eng Okamura, Haruyuki verfasserin aut $ C_{60} $-containing polymers for electron beam lithography 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213 Forman, Drew C. aut Ober, Christopher K. aut Enthalten in Polymer bulletin Berlin : Springer, 1978 71(2014), 9 vom: 25. Juni, Seite 2395-2405 (DE-627)268761833 (DE-600)1473175-7 1436-2449 nnns volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405 https://dx.doi.org/10.1007/s00289-014-1197-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2411 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 71 2014 9 25 06 2395-2405
allfieldsGer	10.1007/s00289-014-1197-z doi (DE-627)SPR003756637 (SPR)s00289-014-1197-z-e DE-627 ger DE-627 rakwb eng Okamura, Haruyuki verfasserin aut $ C_{60} $-containing polymers for electron beam lithography 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213 Forman, Drew C. aut Ober, Christopher K. aut Enthalten in Polymer bulletin Berlin : Springer, 1978 71(2014), 9 vom: 25. Juni, Seite 2395-2405 (DE-627)268761833 (DE-600)1473175-7 1436-2449 nnns volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405 https://dx.doi.org/10.1007/s00289-014-1197-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2411 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 71 2014 9 25 06 2395-2405
allfieldsSound	10.1007/s00289-014-1197-z doi (DE-627)SPR003756637 (SPR)s00289-014-1197-z-e DE-627 ger DE-627 rakwb eng Okamura, Haruyuki verfasserin aut $ C_{60} $-containing polymers for electron beam lithography 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213 Forman, Drew C. aut Ober, Christopher K. aut Enthalten in Polymer bulletin Berlin : Springer, 1978 71(2014), 9 vom: 25. Juni, Seite 2395-2405 (DE-627)268761833 (DE-600)1473175-7 1436-2449 nnns volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405 https://dx.doi.org/10.1007/s00289-014-1197-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2411 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 71 2014 9 25 06 2395-2405
language	English
source	Enthalten in Polymer bulletin 71(2014), 9 vom: 25. Juni, Seite 2395-2405 volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405
sourceStr	Enthalten in Polymer bulletin 71(2014), 9 vom: 25. Juni, Seite 2395-2405 volume:71 year:2014 number:9 day:25 month:06 pages:2395-2405
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Electron beam lithography C Poly( -chloromethylstyrene)
isfreeaccess_bool	false
container_title	Polymer bulletin
authorswithroles_txt_mv	Okamura, Haruyuki @@aut@@ Forman, Drew C. @@aut@@ Ober, Christopher K. @@aut@@
publishDateDaySort_date	2014-06-25T00:00:00Z
hierarchy_top_id	268761833
id	SPR003756637
language_de	englisch
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author	Okamura, Haruyuki
spellingShingle	Okamura, Haruyuki misc Electron beam lithography misc C misc Poly( misc -chloromethylstyrene) $ C_{60} $-containing polymers for electron beam lithography
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topic_title	$ C_{60} $-containing polymers for electron beam lithography Electron beam lithography (dpeaa)DE-He213 C (dpeaa)DE-He213 Poly( (dpeaa)DE-He213 -chloromethylstyrene) (dpeaa)DE-He213
topic	misc Electron beam lithography misc C misc Poly( misc -chloromethylstyrene)
topic_unstemmed	misc Electron beam lithography misc C misc Poly( misc -chloromethylstyrene)
topic_browse	misc Electron beam lithography misc C misc Poly( misc -chloromethylstyrene)
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title	$ C_{60} $-containing polymers for electron beam lithography
ctrlnum	(DE-627)SPR003756637 (SPR)s00289-014-1197-z-e
title_full	$ C_{60} $-containing polymers for electron beam lithography
author_sort	Okamura, Haruyuki
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author_browse	Okamura, Haruyuki Forman, Drew C. Ober, Christopher K.
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author-letter	Okamura, Haruyuki
doi_str_mv	10.1007/s00289-014-1197-z
title_sort	$ c_{60} $-containing polymers for electron beam lithography
title_auth	$ C_{60} $-containing polymers for electron beam lithography
abstract	Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. © Springer-Verlag Berlin Heidelberg 2014
abstractGer	Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. © Springer-Verlag Berlin Heidelberg 2014
abstract_unstemmed	Abstract New $ C_{60} $-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the $ C_{60} $-containing polymers were obtained by the reaction of $ C_{60} $ with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the $ C_{60} $-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene. © Springer-Verlag Berlin Heidelberg 2014
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title_short	$ C_{60} $-containing polymers for electron beam lithography
url	https://dx.doi.org/10.1007/s00289-014-1197-z
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doi_str	10.1007/s00289-014-1197-z
up_date	2024-07-03T21:28:19.183Z
_version_	1803594864205496321
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$ C_{60} $-containing polymers for electron beam lithography

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