Evidence for self-sputtering during pulsed laser deposition of Zn

Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6...
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Autor*in:	Hidalgo, J.G. [verfasserIn] Serna, R. Haro-Poniatowski, E. Afonso, C.N.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2004

Schlagwörter:	Thin Film Surface Roughness Energy Density Pulse Laser Film Surface

Anmerkung:	© Springer-Verlag 2004

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 79(2004), 4-6 vom: 01. Sept., Seite 915-918
Übergeordnetes Werk:	volume:79 ; year:2004 ; number:4-6 ; day:01 ; month:09 ; pages:915-918

Links:	Volltext

DOI / URN:	10.1007/s00339-004-2917-2

Katalog-ID:	SPR004081188

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245	1	0	\|a Evidence for self-sputtering during pulsed laser deposition of Zn
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520			\|a Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material.
650		4	\|a Thin Film \|7 (dpeaa)DE-He213
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650		4	\|a Film Surface \|7 (dpeaa)DE-He213
700	1		\|a Serna, R. \|4 aut
700	1		\|a Haro-Poniatowski, E. \|4 aut
700	1		\|a Afonso, C.N. \|4 aut
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912			\|a GBV_ILN_213
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912			\|a GBV_ILN_285
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912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
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912			\|a GBV_ILN_2014
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912			\|a GBV_ILN_2020
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912			\|a GBV_ILN_2025
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912			\|a GBV_ILN_2027
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912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
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912			\|a GBV_ILN_2070
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allfields	10.1007/s00339-004-2917-2 doi (DE-627)SPR004081188 (SPR)s00339-004-2917-2-e DE-627 ger DE-627 rakwb eng Hidalgo, J.G. verfasserin aut Evidence for self-sputtering during pulsed laser deposition of Zn 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2004 Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213 Serna, R. aut Haro-Poniatowski, E. aut Afonso, C.N. aut Enthalten in Applied physics Berlin : Springer, 1973 79(2004), 4-6 vom: 01. Sept., Seite 915-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918 https://dx.doi.org/10.1007/s00339-004-2917-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 79 2004 4-6 01 09 915-918
spelling	10.1007/s00339-004-2917-2 doi (DE-627)SPR004081188 (SPR)s00339-004-2917-2-e DE-627 ger DE-627 rakwb eng Hidalgo, J.G. verfasserin aut Evidence for self-sputtering during pulsed laser deposition of Zn 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2004 Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213 Serna, R. aut Haro-Poniatowski, E. aut Afonso, C.N. aut Enthalten in Applied physics Berlin : Springer, 1973 79(2004), 4-6 vom: 01. Sept., Seite 915-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918 https://dx.doi.org/10.1007/s00339-004-2917-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 79 2004 4-6 01 09 915-918
allfields_unstemmed	10.1007/s00339-004-2917-2 doi (DE-627)SPR004081188 (SPR)s00339-004-2917-2-e DE-627 ger DE-627 rakwb eng Hidalgo, J.G. verfasserin aut Evidence for self-sputtering during pulsed laser deposition of Zn 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2004 Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213 Serna, R. aut Haro-Poniatowski, E. aut Afonso, C.N. aut Enthalten in Applied physics Berlin : Springer, 1973 79(2004), 4-6 vom: 01. Sept., Seite 915-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918 https://dx.doi.org/10.1007/s00339-004-2917-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 79 2004 4-6 01 09 915-918
allfieldsGer	10.1007/s00339-004-2917-2 doi (DE-627)SPR004081188 (SPR)s00339-004-2917-2-e DE-627 ger DE-627 rakwb eng Hidalgo, J.G. verfasserin aut Evidence for self-sputtering during pulsed laser deposition of Zn 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2004 Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213 Serna, R. aut Haro-Poniatowski, E. aut Afonso, C.N. aut Enthalten in Applied physics Berlin : Springer, 1973 79(2004), 4-6 vom: 01. Sept., Seite 915-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918 https://dx.doi.org/10.1007/s00339-004-2917-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 79 2004 4-6 01 09 915-918
allfieldsSound	10.1007/s00339-004-2917-2 doi (DE-627)SPR004081188 (SPR)s00339-004-2917-2-e DE-627 ger DE-627 rakwb eng Hidalgo, J.G. verfasserin aut Evidence for self-sputtering during pulsed laser deposition of Zn 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2004 Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213 Serna, R. aut Haro-Poniatowski, E. aut Afonso, C.N. aut Enthalten in Applied physics Berlin : Springer, 1973 79(2004), 4-6 vom: 01. Sept., Seite 915-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918 https://dx.doi.org/10.1007/s00339-004-2917-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 79 2004 4-6 01 09 915-918
language	English
source	Enthalten in Applied physics 79(2004), 4-6 vom: 01. Sept., Seite 915-918 volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918
sourceStr	Enthalten in Applied physics 79(2004), 4-6 vom: 01. Sept., Seite 915-918 volume:79 year:2004 number:4-6 day:01 month:09 pages:915-918
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Thin Film Surface Roughness Energy Density Pulse Laser Film Surface
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Hidalgo, J.G. @@aut@@ Serna, R. @@aut@@ Haro-Poniatowski, E. @@aut@@ Afonso, C.N. @@aut@@
publishDateDaySort_date	2004-09-01T00:00:00Z
hierarchy_top_id	235503231
id	SPR004081188
language_de	englisch
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The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. 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author	Hidalgo, J.G.
spellingShingle	Hidalgo, J.G. misc Thin Film misc Surface Roughness misc Energy Density misc Pulse Laser misc Film Surface Evidence for self-sputtering during pulsed laser deposition of Zn
authorStr	Hidalgo, J.G.
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topic_title	Evidence for self-sputtering during pulsed laser deposition of Zn Thin Film (dpeaa)DE-He213 Surface Roughness (dpeaa)DE-He213 Energy Density (dpeaa)DE-He213 Pulse Laser (dpeaa)DE-He213 Film Surface (dpeaa)DE-He213
topic	misc Thin Film misc Surface Roughness misc Energy Density misc Pulse Laser misc Film Surface
topic_unstemmed	misc Thin Film misc Surface Roughness misc Energy Density misc Pulse Laser misc Film Surface
topic_browse	misc Thin Film misc Surface Roughness misc Energy Density misc Pulse Laser misc Film Surface
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title	Evidence for self-sputtering during pulsed laser deposition of Zn
ctrlnum	(DE-627)SPR004081188 (SPR)s00339-004-2917-2-e
title_full	Evidence for self-sputtering during pulsed laser deposition of Zn
author_sort	Hidalgo, J.G.
journal	Applied physics
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author_browse	Hidalgo, J.G. Serna, R. Haro-Poniatowski, E. Afonso, C.N.
container_volume	79
format_se	Elektronische Aufsätze
author-letter	Hidalgo, J.G.
doi_str_mv	10.1007/s00339-004-2917-2
title_sort	evidence for self-sputtering during pulsed laser deposition of zn
title_auth	Evidence for self-sputtering during pulsed laser deposition of Zn
abstract	Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. © Springer-Verlag 2004
abstractGer	Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. © Springer-Verlag 2004
abstract_unstemmed	Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material. © Springer-Verlag 2004
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title_short	Evidence for self-sputtering during pulsed laser deposition of Zn
url	https://dx.doi.org/10.1007/s00339-004-2917-2
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author2	Serna, R. Haro-Poniatowski, E. Afonso, C.N.
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doi_str	10.1007/s00339-004-2917-2
up_date	2024-07-03T23:30:49.163Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR004081188</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230328150539.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201001s2004 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-004-2917-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR004081188</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-004-2917-2-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hidalgo, J.G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Evidence for self-sputtering during pulsed laser deposition of Zn</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2004</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/$ cm^{2} $ range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6 J/$ cm^{2} $) the maximum of the distribution is at the substrate center, for intermediate E.D. it is displaced to the side, and a clear minimum appears at the center of the substrate for the higher E.D. (≥4.5 J/$ cm^{2} $). The growth velocity at the center of the substrate reaches a maximum value for E.D. of 2.8 J/$ cm^{2} $, and decreases for higher E.D. as a result of the competition between deposition and self-sputtering. Virtually a zero growth velocity is obtained for E.D. above 4.5 J/$ cm^{2} $. The self-sputtering process is most likely responsible for the increase of the film surface roughness as a function of the laser E.D. The low cohesive energy for metal Zn, compared to other metals (Fe, Ag, Cu) is correlated with the high efficiency of the self-sputtering for this material.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface Roughness</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Energy Density</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Pulse Laser</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Film Surface</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Serna, R.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haro-Poniatowski, E.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Afonso, C.N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics</subfield><subfield code="d">Berlin : Springer, 1973</subfield><subfield code="g">79(2004), 4-6 vom: 01. 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Evidence for self-sputtering during pulsed laser deposition of Zn

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