Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses
Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Huang, S.Y. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2005 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 82(2005), 3 vom: 24. Nov., Seite 529-533 |
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| Übergeordnetes Werk: |
volume:82 ; year:2005 ; number:3 ; day:24 ; month:11 ; pages:529-533 |
| Links: |
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| DOI / URN: |
10.1007/s00339-005-3414-y |
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| Katalog-ID: |
SPR004088921 |
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| 100 | 1 | |a Huang, S.Y. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
| 264 | 1 | |c 2005 | |
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| 520 | |a Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. | ||
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| 650 | 4 | |a Amorphous Background |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Single Femtosecond Laser Pulse |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Zhao, Z.J. |4 aut | |
| 700 | 1 | |a Sun, Z. |4 aut | |
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10.1007/s00339-005-3414-y doi (DE-627)SPR004088921 (SPR)s00339-005-3414-y-e DE-627 ger DE-627 rakwb eng Huang, S.Y. verfasserin aut Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 Zhao, Z.J. aut Sun, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 3 vom: 24. Nov., Seite 529-533 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:3 day:24 month:11 pages:529-533 https://dx.doi.org/10.1007/s00339-005-3414-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 3 24 11 529-533 |
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10.1007/s00339-005-3414-y doi (DE-627)SPR004088921 (SPR)s00339-005-3414-y-e DE-627 ger DE-627 rakwb eng Huang, S.Y. verfasserin aut Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 Zhao, Z.J. aut Sun, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 3 vom: 24. Nov., Seite 529-533 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:3 day:24 month:11 pages:529-533 https://dx.doi.org/10.1007/s00339-005-3414-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 3 24 11 529-533 |
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10.1007/s00339-005-3414-y doi (DE-627)SPR004088921 (SPR)s00339-005-3414-y-e DE-627 ger DE-627 rakwb eng Huang, S.Y. verfasserin aut Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 Zhao, Z.J. aut Sun, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 3 vom: 24. Nov., Seite 529-533 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:3 day:24 month:11 pages:529-533 https://dx.doi.org/10.1007/s00339-005-3414-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 3 24 11 529-533 |
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10.1007/s00339-005-3414-y doi (DE-627)SPR004088921 (SPR)s00339-005-3414-y-e DE-627 ger DE-627 rakwb eng Huang, S.Y. verfasserin aut Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 Zhao, Z.J. aut Sun, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 3 vom: 24. Nov., Seite 529-533 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:3 day:24 month:11 pages:529-533 https://dx.doi.org/10.1007/s00339-005-3414-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 3 24 11 529-533 |
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10.1007/s00339-005-3414-y doi (DE-627)SPR004088921 (SPR)s00339-005-3414-y-e DE-627 ger DE-627 rakwb eng Huang, S.Y. verfasserin aut Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 Zhao, Z.J. aut Sun, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 3 vom: 24. Nov., Seite 529-533 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:3 day:24 month:11 pages:529-533 https://dx.doi.org/10.1007/s00339-005-3414-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 3 24 11 529-533 |
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Enthalten in Applied physics 82(2005), 3 vom: 24. Nov., Seite 529-533 volume:82 year:2005 number:3 day:24 month:11 pages:529-533 |
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Enthalten in Applied physics 82(2005), 3 vom: 24. Nov., Seite 529-533 volume:82 year:2005 number:3 day:24 month:11 pages:529-533 |
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Laser Pulse Femtosecond Laser Pulse Average Laser Amorphous Background Single Femtosecond Laser Pulse |
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Huang, S.Y. @@aut@@ Zhao, Z.J. @@aut@@ Sun, Z. @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR004088921</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230328150604.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201001s2005 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-005-3414-y</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR004088921</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-005-3414-y-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Huang, S.Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2005</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2005</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Laser Pulse</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Femtosecond Laser Pulse</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Average Laser</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Amorphous Background</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Single Femtosecond Laser Pulse</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhao, Z.J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, Z.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics</subfield><subfield code="d">Berlin : Springer, 1973</subfield><subfield code="g">82(2005), 3 vom: 24. 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Huang, S.Y. |
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Huang, S.Y. misc Laser Pulse misc Femtosecond Laser Pulse misc Average Laser misc Amorphous Background misc Single Femtosecond Laser Pulse Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
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Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses Laser Pulse (dpeaa)DE-He213 Femtosecond Laser Pulse (dpeaa)DE-He213 Average Laser (dpeaa)DE-He213 Amorphous Background (dpeaa)DE-He213 Single Femtosecond Laser Pulse (dpeaa)DE-He213 |
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Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
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Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
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Huang, S.Y. Zhao, Z.J. Sun, Z. |
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10.1007/s00339-005-3414-y |
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investigation of phase changes in $ ge_{1} %$ sb_{4} %$ te_{7} $ films by single ultra-fast laser pulses |
| title_auth |
Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
| abstract |
Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. © Springer-Verlag 2005 |
| abstractGer |
Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. © Springer-Verlag 2005 |
| abstract_unstemmed |
Abstract The phase transformations induced in a $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–$ SiO_{2} $/80 nm $ Ge_{1} %$ Sb_{4} %$ Te_{7} $/100 nm ZnS–$ SiO_{2} $/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ film within a conventional optical disk structure using non-amplified laser systems as laser sources. © Springer-Verlag 2005 |
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3 |
| title_short |
Investigation of phase changes in $ Ge_{1} %$ Sb_{4} %$ Te_{7} $ films by single ultra-fast laser pulses |
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https://dx.doi.org/10.1007/s00339-005-3414-y |
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Zhao, Z.J. Sun, Z. |
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| doi_str |
10.1007/s00339-005-3414-y |
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2024-07-03T23:33:16.924Z |
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| score |
7.4009314 |